TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
5 A Continuous On-State Current
TO-220 PACKAGE
20 A Surge-Current
(TOP VIEW)
Glass Passivated Wafer
K 1
400 V to 800 V Off-State Voltage
A 2
Max IGT of 1 mA
G 3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC108D 400
TIC108M 600
Repetitive peak off-state voltage (see Note 1) VDRM V
TIC108S 700
TIC108N 800
TIC108D 400
TIC108M 600
Repetitive peak reverse voltage VRRM V
TIC108S 700
TIC108N 800
Continuous on-state current at (or below) 80°C case temperature (see Note 2) IT(RMS) 5 A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
IT(AV) 3.2 A
(see Note 3)
Surge on-state current (see Note 4) ITM 20 A
Peak positive gate current (pulse width d" 300 µs) IGM 0.2 A
Peak gate power dissipation (pulse width d" 300 µs) PGM 1.3 W
Average gate power dissipation (see Note 5) PG(AV) 0.3 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k&!.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
.
PRODUCT I NF ORMAT I ON
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Repetitive peak
IDRM VD = rated VDRM RGK = 1 k&! TC = 110°C 400 µA
off-state current
Repetitive peak
IRRM VR = rated VRRM IG = 0 TC = 110°C 1 mA
reverse current
IGT Gate trigger current VAA = 6 V RL = 100 &! tp(g) e" 20 µs 0.2 1 mA
VAA = 6 V RL = 100 &! TC = - 40°C
1.2
tp(g) e" 20 µs RGK = 1 k&!
VAA = 6 V RL = 100 &!
VGT Gate trigger voltage 0.4 0.6 1 V
tp(g) e" 20 µs RGK = 1 k&!
VAA = 6 V RL = 100 &! TC = 110°C
0.2
tp(g) e" 20 µs RGK = 1 k&!
VAA = 6 V RGK = 1 k&! TC = - 40°C
15
Initiating IT = 20 mA
IH Holding current mA
VAA = 6 V RGK = 1 k&!
10
Initiating IT = 20 mA
Peak on-state
VTM ITM = 5 A (see Note 6) 1.7 V
voltage
Critical rate of rise of
dv/dt VD = rated VD RGK = 1 k&! TC = 110°C 80 V/µs
off-state voltage
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle d" 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R¸JC Junction to case thermal resistance 3.5 °C/W
R¸JA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Gate-controlled
tgt IT = 5 A IG = 10 mA See Figure 1 2.9 µs
turn-on time
Circuit-commutated
tq IT = 5 A IRM = 8 A See Figure 2 13.3 µs
turn-off time
PRODUCT I NF ORMAT I ON
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TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V
IT
&!
6 &!
VG
VA
10%
tgt
DUT
RG
G
VG
VA
IG
90%
PMC1AA
Figure 1. Gate-controlled turn-on time
30 V
µ
µ
0.1 F
&!
6 &! R2
µ
µ
to 0.5 F
NOTES: A. Resistor R1 is adjusted for the specified value
of IRM.
B. Resistor R2 value is 30/IH, where IH is the
holding current value of thyristor TH1.
IA
R1
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
VA
synchronised to produce an on-state anode
current waveform with the following
DUT TH1
characteristics:
RG RG
tP = 50 µs to 300 µs
G1 G2
VK
duty cycle = 1%
VG1 IG VG2
(IRM Monitor)
E. Pulse Generators, G1 and G2, have output
IG
pulse amplitude, VG, of e" 20 V and duration of
&!
0.1 &!
10 µs to 20 µs.
G2 tP Synchronisation
VG1
VG2
IT
tP
IA
0
IRM
VA
VT
0
tq PMC1AB
Figure 2. Circuit-commutated turn-off time
PRODUCT I NF ORMAT I ON
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TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
AVERAGE ANODE ON-STATE CURRENT MAX CONTINUOUS ANODE POWER DISSIPATED
vs
DERATING CURVE
CONTINUOUS ANODE ON-STATE CURRENT
TI23AA
TI23AB
6
100
TJ = 110 °C
Continuous DC
5
4
Åš = 180°
Åš
3
10
2
0° 180°
Åš
Åš
1
Conduction
Angle
0
1
30 40 50 60 70 80 90 100 110
1 10 100
TC - Case Temperature - °C
IT - Continuous Anode Forward Current - A
Figure 3. Figure 4.
SURGE ON-STATE CURRENT TRANSIENT THERMAL RESISTANCE
vs vs
CYCLES OF CURRENT DURATION CYCLES OF CURRENT DURATION
TI23AD
TI23AC
100 10
d"
TC d" 80°C
No Prior Device Conduction
Gate Control Guaranteed
10 1
1 0·1
1 10 100 1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 5. Figure 6.
PRODUCT I NF ORMAT I ON
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A
P - Max Continuous Anode Power Dissipated - W
T(AV)
I
- Maximum Average Anode Forward Current - A
TM
I
- Peak Half-Sine-Wave Current - A
¸
JC(t)
¸
R
- Transient Thermal Resistance - °C/W
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE
vs vs
CASE TEMPERATURE CASE TEMPERATURE
TC23AA TC23AB
10 0·9
VAA = 6 V
VAA = 6 V
RL = 100 &!
&!
RL = 100 &!
&!
0·8
tp(g) e" 20 µs
e"
RGK = 1 k&!
&!
tp(g) e" 20 µs
e"
0·7
1
0·6
0·5
0·1 0·4
-60 -40 -20 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 7. Figure 8.
GATE FORWARD VOLTAGE HOLDING CURRENT
vs vs
GATE FORWARD CURRENT
CASE TEMPERATURE
TC23AC TC23AD
100 10
VAA = 6 V
IA = 0
RGK = 1 k&!
&!
TC = 25 °C
Initiating IT = 20 mA
tp = 300 µs
Duty Cycle d" 2 %
d"
10
1 1
0·1 1 10 100 1000 -50 -25 0 25 50 75 100 125
IGF - Gate Forward Current - mA TC - Case Temperature - °C
Figure 9. Figure 10.
PRODUCT I NF ORMAT I ON
5
GT
GT
V
- Gate Trigger Voltage - V
I
- Gate Trigger Current - mA
H
I - Holding Current - mA
GF
V
- Gate Forward Voltage - V
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE-CONTROLLED TURN-ON TIME
PEAK ON-STATE VOLTAGE
vs
vs
PEAK ON-STATE CURRENT GATE CURRENT
TC23AF
TC23AE
3.1
2.6
TC = 25 °C
2.4
tp = 300 µs
3.0
Duty Cycle d" 2 %
d"
2.2
2.9
2.0
1.8
2.8
1.6
2.7
1.4
VAA = 30 V
RL = 6 &!
&!
1.2
2.6
TC = 25 °C
1.0
See Test Circuit and Waveforms
2.5
0.8
1 10 100
0·1 1 10
IG - Gate Current - mA
ITM - Peak On-State Current - A
Figure 11. Figure 12.
CIRCUIT-COMMUTATED TURN-OFF TIME
vs
CASE TEMPERATURE
TC23AG
21
VAA = 30 V
20
RL = 6 &!
&!
IRM = 8 A
19
tp = 300 µs
d"
18 Duty Cycle d" 2 %
17
16
15
14
13
12
20 30 40 50 60 70 80 90 100 110 120
TC - Case Temperature - °C
Figure 13.
PRODUCT I NF ORMAT I ON
6
TM
V
- Peak On-State Voltage - V
gt
t - Gate Controlled Turn-On Time - µs
q
t - Circuit-Commutated Turn-Off Time - µs
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
1,32
3,96
Å‚
10,0
2,95 1,23
3,71
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1 2 3
2,74 0,64
2,34 0,41
2,90
5,28
4,88 2,40
VERSION 1 VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab. MDXXBE
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT I NF ORMAT I ON
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TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT I NF ORMAT I ON
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