2SA2059
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2059
High-Speed Switching Applications
Unit: mm
DC-DC Converter Applications
Strobe Applications
" High DC current gain: hFE = 200 to 500 (I = -0.5 A)
C
" Low collector-emitter saturation voltage: V = -0.19 V (max)
CE (sat)
" High-speed switching: t = 40 ns (typ.)
f
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO -20 V
Collector-emitter voltage VCEO -20 V
Emitter-base voltage VEBO -7 V
DC IC -3.0
Collector current A
Pulse ICP -5.0
Base current IB -300 mA
JEDEC 
DC PC 1.0
Collector power
W
dissipation JEITA SC-62
(Note)
t = 10 s 2.5
TOSHIBA 2-5K1A
Junction temperature Tj 150 °C
Storage temperature range Tstg -55 to 150 °C
Weight: 0.05 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
2
645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = -20 V, IE = 0   -100 nA
Emitter cut-off current IEBO VEB = -7 V, IC = 0   -100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -20   V
hFE (1) VCE = -2 V, IC = -0.5 A 200  500
DC current gain
hFE (2) VCE = -2 V, IC = -1.6 A 100  
Collector-emitter saturation voltage VCE (sat) IC = -1.6 A, IB = -53 mA   -0.19 V
Base-emitter saturation voltage VBE (sat) IC = -1.6 A, IB = -53 mA   -1.10 V
Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz  28  pF
Rise time tr See Figure 1 circuit diagram.  70 
Switching time Storage time tstg VCC H" -12 V, RL = 7.5 &!  150  ns
Fall time tf -IB1 = IB2 = -53.3 mA
 40 
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2SA2059
Marking
VCC
20 µs
IB2
IB1
Output
4 F
Input
IB1
IB2
Duty cycle < 1%
Figure 1 Switching Time Test Circuit &
Timing Chart
2 2001-10-29
L
R
2SA2059
IC  VCE hFE  IC
-6 10000
Common emitter
VCE = -2 V
-100 -80
Single
-60
-5
nonrepetitive
pulse
1000
Ta = 100°C
-4 -40
25
-3
-55
-20
100
-2
-10
IB = -5 mA
-1 10
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
1
Collector-emitter voltage VCE (V)
-0.001 -0.01 -0.1 -1 -10
Collector current IC (A)
VCE (sat)  IC VBE (sat)  IC
-10 -100
Common emitter Common emitter
IC/IB = 30 IC/IB = 30
Single Single
nonrepetitive nonrepetitive
pulse pulse
-1 -10
-55
-0.1 -1
Ta = 100°C
Ta = 100°C
25
-55
-0.01 25 -0.1
-0.001 -0.01
-0.001 -0.01 -0.1 -1 -10 -0.001 -0.01 -0.1 -1 -10
Collector current IC (A) Collector current IC (A)
IC  VBE
-5
Common emitter
VCE = -2 V
Single nonrepetitive
-4
pulse
-3
-2
Ta = 100°C
25 -55
-1
0
0 -0.4 -0.8 -1.2 -1.6
Base-emitter voltage VBE (V)
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C
FE
Collector current I
(A)
DC current gain
h
BE (sat)
CE (sat)
V
(V)
V
(V)
Base-emitter saturation voltage
Collector-emitter saturation voltage
C
Collector current I
(A)
2SA2059
rth  tw
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
1
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s)
Safe Operating Area
-10
IC max (pulsed) f& 10 msf& 1 msf& 100 µsf&
10 µsf&
IC max (continuous)
100 msf&*
-1
DC operation * 10 sf&*
(Ta = 25°C)
f&: Single nonrepetitive pulse
Ta = 25°C
-0.1
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
-0.01
-0.1 -1 -10 -100
Collector-emitter voltage VCE (V)
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th
r
(°C/W)
Transient thermal resistance
C
Collector current I
(A)
CEO
V
max
2SA2059
RESTRICTIONS ON PRODUCT USE
000707EAA
" TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the  Handling Guide for Semiconductor Devices, or  TOSHIBA Semiconductor Reliability
Handbook etc..
" The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer s own risk.
" The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
" The information contained herein is subject to change without notice.
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