BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
1
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
●
62.5 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum h
FE
of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD646
BD648
BD650
BD652
V
CBO
-80
-100
-120
-140
V
Collector-emitter voltage (I
B
= 0)
BD646
BD648
BD650
BD652
V
CEO
-60
-80
-100
-120
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-8
A
Peak collector current (see Note 1)
I
CM
-12
A
Continuous base current
I
B
-0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
P
tot
62.5
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
P
tot
2
W
Unclamped inductive load energy (see Note 4)
½LI
C
2
50
mJ
Operating junction temperature range
T
j
-65 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
°C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
2
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD646
BD648
BD650
BD652
-60
-80
-100
-120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BD646
BD648
BD650
BD652
-0.5
-0.5
-0.5
-0.5
mA
I
CBO
Collector cut-off
current
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -70 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
(see Notes 5 and 6)
-5
mA
h
FE
Forward current
transfer ratio
V
CE
= -3 V
I
C
= -3 A
(see Notes 5 and 6)
750
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -12 mA
I
B
= -50 mA
I
C
= -3 A
I
C
= -5 A
(see Notes 5 and 6)
-2
-2.5
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= -50 mA
I
C
= -5 A
(see Notes 5 and 6)
-3
V
V
BE(on)
Base-emitter
voltage
V
CE
= -3 V
I
C
= -3 A
(see Notes 5 and 6)
-2.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θJC
Junction to case thermal resistance
2.0
°C/W
R
θJA
Junction to free air thermal resistance
62.5
°C/W
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
3
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·5
-1·0
-10
h
FE
-
T
y
pi
c
a
l
D
C
Cu
rr
e
n
t
G
a
in
50000
100
1000
10000
TCS135AD
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
V
CE
= -3 V
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·5
-1·0
-10
V
CE
(s
a
t)
- Co
ll
e
c
to
r-E
m
itte
r
Sa
tu
ra
ti
o
n
Vo
lt
a
g
e
- V
-2·0
-1·5
-1·0
-0·5
TCS135AB
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·5
-1·0
-10
V
BE
(s
a
t)
- Ba
s
e
-Em
itte
r Sa
tu
ra
ti
o
n
Vo
lt
a
g
e
- V
-3·0
-2·5
-2·0
-1·5
-1·0
-0·5
TCS135AC
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
4
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-1·0
-10
-100
-1000
I
C
- Co
ll
e
c
to
r Cu
rr
e
n
t - A
-0.01
-0·1
-1·0
-10
SAS135AC
BD646
BD648
BD650
BD652
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - °C
0
25
50
75
100
125
150
P
to
t
-
Ma
xi
mu
m
P
o
w
e
r D
is
s
ip
at
io
n
-
W
0
10
20
30
40
50
60
70
80
TIS130AC
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