BD136/138/140
Medium Power Linear and Switching
Applications
" Complement to BD135, BD137 and BD139 respectively
TO-126
1
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD136 - 45 V
: BD138 - 60 V
: BD140 - 80 V
VCEO Collector-Emitter Voltage : BD136 - 45 V
: BD138 - 60 V
: BD140 - 80 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 1.5 A
ICP Collector Current (Pulse) - 3.0 A
IB Base Current - 0.5 A
PC Collector Dissipation (TC=25°C) 12.5 W
PC Collector Dissipation (Ta=25°C) 1.25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD136 IC = - 30mA, IB = 0 - 45 V
: BD138 - 60 V
: BD140 - 80 V
ICBO Collector Cut-off Current VCB = - 30V, IE = 0 - 0.1 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA
hFE1 * DC Current Gain VCE = - 2V, IC = - 5mA 25
hFE2 VCE = - 2V, IC = - 0.5A 25
hFE3 VCE = - 2V, IC = - 150mA 40 250
VCE(sat) * Collector-Emitter Saturation Voltage - 0.5 V
IC = - 500mA, IB = - 50mA
VBE(on) * Base-Emitter ON Voltage VCE = - 2V, IC = - 0.5A - 1 V
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classificntion
Classification 6 10 16
hFE3 40 ~ 100 63 ~ 160 100 ~ 250
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD136/138/140
Typical Characteristics
100
-500
VCE = -2V
90 -450
80 -400
70 -350
60 -300
50 -250
40 -200
30 -150
-100
20
-50
10
-0
0
-1E-3 -0.01 -0.1 -1 -10
-10 -100 -1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
-10
-1.1
-1.0
IC MAX. (Pulsed)
10us
-0.9
IC MAX. (Continuous)
-0.8
-1
-0.7
-0.6
-0.5
-0.1
-0.4
-0.3
-0.2
-0.01
-0.1
-1 -10 -100
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0 25 50 75 100 125 150 175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD136/138/140
BD140
BD136
BD138
FE
h
, DC CURRENT GAIN
CE
V
(sat)[mV], SATURATION VOLTAGE
BE
C
I [A], COLLECTOR CURRENT
V
[V], BASE-EMITTER VOLTAGE
C
P [W], POWER DISSIPATION
B
20 I
=
C
I
B
10 I
=
C
I
)
(sat
BE
B
V
10
10 I
1m
=
0us
C
I
s
(on)
DC
BE
V
V
5
-
=
CE
V
Package Demensions
TO-126
8.00 Ä…0.30 3.25 Ä…0.20
Å‚3.20 Ä…0.10
(1.00) (0.50)
0.75 Ä…0.10
1.75 Ä…0.20
1.60 Ä…0.10
0.75 Ä…0.10
#1
+0.10
0.50
2.28TYP 2.28TYP  0.05
[2.28Ä…0.20] [2.28Ä…0.20]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD136/138/140
3.90
Ä…
0.10
11.00
Ä…
0.20
14.20MAX
16.10
Ä…
0.20
13.06
Ä…
0.30
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International Rev. E