PD - 9.767A
IRGPF50F
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
Features
C
" Switching-loss rating includes all "tail" losses
VCES = 900V
" Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCE(sat) d" 2.7V
G
@VGE = 15V, IC = 28A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 900 V
IC @ TC = 25°C Continuous Collector Current 51
IC @ TC = 100°C Continuous Collector Current 28 A
ICM Pulsed Collector Current 100
ILM Clamped Inductive Load Current 100
VGE Gate-to-Emitter Voltage Ä…20 V
EARV Reverse Voltage Avalanche Energy 20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf" in (1.1N" m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R¸JC Junction-to-Case ------ ------ 0.64
R¸CS Case-to-Sink, flat, greased surface ------ 0.24 ------ °C/W
R¸JA Junction-to-Ambient, typical socket mount ------ ------ 40
Wt Weight ------ 6 (0.21) ------ g (oz)
Revision 0
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IRGPF50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 900 ---- ---- V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 ---- ---- V VGE = 0V, IC = 1.0A
"V(BR)CES/"TJ Temperature Coeff. of Breakdown Voltage ---- 0.74 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 2.1 2.7 IC = 28A VGE = 15V
---- 2.7 ---- V IC = 51A See Fig. 2, 5
---- 2.4 ---- IC = 28A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA
"VGE(th)/"TJ Temperature Coeff. of Threshold Voltage ---- -9.7 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 12 18 ---- S VCE = 100V, IC = 28A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 900V
---- ---- 2000 VGE = 0V, VCE = 900V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- Ä…100 nA VGE = Ä…20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 81 120 IC = 28A
Qge Gate - Emitter Charge (turn-on) ---- 16 24 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 29 44 VGE = 15V
td(on) Turn-On Delay Time ---- 32 ---- TJ = 25°C
tr Rise Time ---- 22 ---- ns IC = 28A, VCC = 720V
td(off) Turn-Off Delay Time ---- 200 280 VGE = 15V, RG = 5.0&!
tf Fall Time ---- 130 180 Energy losses include "tail"
Eon Turn-On Switching Loss ---- 1.1 ----
Eoff Turn-Off Switching Loss ---- 1.8 ---- mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss ---- 2.9 4.1
td(on) Turn-On Delay Time ---- 32 ---- TJ = 150°C,
tr Rise Time ---- 20 ---- ns IC = 28A, VCC = 720V
td(off) Turn-Off Delay Time ---- 480 ---- VGE = 15V, RG = 5.0&!
tf Fall Time ---- 450 ---- Energy losses include "tail"
Ets Total Switching Loss ---- 5.7 ---- mJ See Fig. 10, 14
LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 2300 ---- VGE = 0V
Coes Output Capacitance ---- 180 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 27 ---- Å‚
= 1.0MHz
Notes:
Repetitive rating; V =20V, pulse width Pulse width 5.0µs,
Repetitive rating; pulse width limited
GE
limited by max. junction temperature. single shot.
by maximum junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH, Pulse width d" 80µs; duty factor d" 0.1%.
RG= 5.0&!, ( See fig. 13a )
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IRGPF50F
60
For both:
Triangula r w ave:
Duty c yc le: 50%
TJ = 125°C
T s i n k = 90°C
G ate d rive as s pec ified
Clamp voltage:
P ow e r Dissipa tion = 4 0W
40
80% of rated
Square w ave:
60% of rated
voltage
20
Ideal diodes
0
0.1 1 10 100
f, Fre quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I )
PK
1000 1000
TJ = 25°C
100 100
TJ = 150°C
TJ = 150°C
TJ = 25 °C
10 10
V C = 100V
V G E = 15V
C
5µs P UL S E W IDTH
20µs P ULSE W ID TH
1
1
5 10 15 20
1 10
VG E , G ate -to-E m itter Volta ge (V )
VC E , Collector-to-Em itter V oltage (V)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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LOAD CURRENT (A)
C
C
I , C ollector-to-Emitter Current (A)
I , Collector-to-Em itter C urrent (A )
IRGPF50F
60 4.0
V G E = 15V
VG E = 15V
80µs P ULSE W ID TH
50 3.5
I C = 56A
40 3.0
30 2.5
I C = 28A
2.0
20
I C = 14A
1.5
10
1.0
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
25 50 75 100 125 150
T C , C ase Tem perature (°C) TC , C ase Tem perature (°C)
Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature Case Temperature
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
t
2
0.02
SIN GLE P U LSE
N otes:
(TH ER M AL R E SP ON SE )
0.01
1 . D uty fac tor D = t 1 / t 2
2. P ea k TJ = P Z t h J C + T C
D M x
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t 1 , R ectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Maximum DC Collector C urrent (A)
C E
V , C ollector-to-Emitter Voltage (V)
thJC
Thermal R esponse (Z )
IRGPF50F
50 0 0 20
V GE = 0V, f = 1MHz
VC E = 400V
C = C + C , C SHORTED
ies ge gc ce I C = 28A
C = C
res gc
C ce + C gc
= C
40 0 0 oes
16
C ies
30 0 0 12
C oes
20 0 0 8
10 0 0 4
C res
0 0
1 10 10 0 0 20 40 60 80 100
V C E , Collector-to-Em itter V oltage (V)
Q g , Total G ate Charge (nC)
Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage Gate-to-Emitter Voltage
4.4 100
VC C = 720V R G = 5 &!
VG E = 15V V G E = 15V
4.2
TC = 25°C V C C = 720V
I C = 28A
4.0
I C = 56A
3.8
10
I C = 28A
3.6
I C = 14A
3.4
3.2
1
3.0
2.8
2.6
0.1
0 10 2 0 30 40 50 60
-60 -40 -20 0 20 40 60 80 100 120 140 160
R G , G ate R esistance (&! ) TC, Case Tem perature (°C)
W
Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Case Temperature
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C, C apacitance (pF)
G E
V , Gate-to-Emitter Voltage (V)
T o tal S w itching L osse s (m J)
T otal S w itching Losses (m J)
IRGPF50F
16 1000
RG = 5 &! VG E = 20V
G E
T C = 150°C TJ = 125°C
V C C = 720V
V G E = 15V
12 100
SA FE OP E RA TIN G A RE A
10
8
1
4
0.1
0
1 10 100 1000
10 20 30 40 50 60
VC E , C olle ctor-to-E m itter V oltage (V )
I C , Collector-to-E mitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix F: Section D - page D-8
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13
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Total Sw itching Losses (m J)
C
I , C ollecto r-to-E m itter C urre nt (A )