5-V Low-Drop Voltage Regulator TLE 4260
Features
" Low-drop voltage
" Very low quiescent current
" Low starting current consumption
" Integrated temperature protection
" Protection against reverse polarity
" Input voltage up to 42 V
" Overvoltage protection up to 65 V (d" 400 ms)
P-TO220-5-1
" Short-circuit proof
" Suited for automotive electronics
" Wide temperature range
" EMC proofed (100 V/m)
Type Ordering Code Package
TLE 4260 Q67000-A8187 P-TO220-5-1
P-TO220-5-2
TLE 4260 S Q67000-A9044 P-TO220-5-2
Please also refer to the new pin compatible device TLE 4270
Functional Description
TLE 4260; S is a 5-V low-drop fixed-voltage regulator in a P-TO220-5-H/S package. The
maximum input voltage is 42 V (65 V/d" 400 ms). The device can produce an output
current of more than 500 mA. It is shortcircuit-proof and incorporates temperature
protection that disables the circuit at unpermissibly high temperatures.
Due to the wide temperature range of  40 to 150 ° C, the TLE 4260; S is also suitable
for use in automotive applications.
The IC regulates an input voltage VI in the range 6 < VI < 35 V to VQnominal = 5.0 V. A reset
signal is generated for an output voltage of VQ <4.75V. The reset delay can be set
externally with a capacitor. If the output current is reduced below 10 mA, the regulator
switches internally to standby and the reset generator is turned off. The standby current
drops to max. 700 µ A.
Semiconductor Group 1 1998-11-01
TLE 4260
Pin Configuration
(top view)
TLE 4260 TLE 4260 S
1 2 3 4 5
V™ GND VQ
QVRES DRES
AEP00577
Pin Definitions and Functions (TLE 4260 and TLE 4260 S)
Pin No. Symbol Function
1 VI Input; block directly to ground at the IC by a 470-nF capacitor
2 QVRES Reset output; open collector output controlled by the reset
delay
3GND Ground
4 DRES Reset delay; wired to ground with a capacitor
5 VQ 5-V output voltage; block to ground with a 22-µ F capacitor
Semiconductor Group 2 1998-11-01
TLE 4260
Circuit Description
The control amplifier compares a reference voltage, which is kept highly accurate by
resistance adjustment, to a voltage that is proportional to the output voltage and drives
the base of the series transistor via a buffer. Saturation control as a function of the load
current prevents any over-saturation of the power element. If the output voltage goes
below 96% of its typical value, an external capacitor is discharged on pin 4 by the reset
generator. If the voltage on the capacitor reaches the lower threshold VST, a reset signal
is issued on pin 2 and not cancelled again until the upper threshold VDT is exceeded. For
an output current of less than IQN Off = 10 mA the standby changeover turns off the reset
generator. The latter is turned on again when the output current increases, the output
voltage drops below 4.2 V or the delay capacitor is discharged by external measures.
The IC also incorporates a number of internal circuits for protection against:
" Overload
" Overvoltage
" Overtemperature
" Reverse polarity
Saturation
Overvoltage Temperature
Control and
Monitoring Sensor
Protection
Circuit
1 7
Input Output
Control
Amplifier
Buffer
BANDGAP
+
Adjustment
Reference
-
4 RESET
Delay
RESET
STANDBY Generator
2
RESET
Changeover
3
GND AEB00578
Block Diagram
Semiconductor Group 3 1998-11-01
TLE 4260
Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Remarks
min. max.
Input (Pin 1)
Input voltage VI  42 42 V 
VI  65 V t d" 400 ms
Input current II  1.6 A 
Reset Output (Pin 2)
Voltage VR  0.3 42 V 
Current IR    internally limited
Ground (Pin 3)
Current IGND  0.5  A 
Reset Delay (Pin 4)
Voltage VD  0.3 42 V 
Current ID    internally limited
Output (Pin 5)
Differential voltage
VI  VQ  5.25 VI V 
Current  1.4 A 
IQ
Temperature
Junction temperature Tj  32 ° C 
Storage temperature Tstg  50 150 ° C 
Semiconductor Group 4 1998-11-01
TLE 4260
Operating Range
Parameter Symbol Limit Values Unit Remarks
min. max.
1)
Input voltage VI  32 V
Junction temperature Tj  40 165 ° C 
Thermal Resistances
Junction ambient Rthja  65 K/W 
Junction case Rthjc  3 K/W 
1)
See diagram  Output Current versus Input Voltage
Semiconductor Group 5 1998-11-01
TLE 4260
Characteristics
VI =13.5 V; Tj =25° C; (unless otherwise specified)
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Normal Operation
Output voltage VQ 4.75 5.0 5.25 V 25 mA d" IQ d" 500 mA
6 V d" VI d" 28 V
 40 ° C d" Tj d" 125 ° C
Short -circuit current ISC 500 1000  mA VI =17 V to 28 V;
VQ = 0 V
Current consumption Iq  8.5 10 mA1) 6 V d" VI d" 28 V
Iq = II  IQ IQ = 150 mA
Current consumption Iq  50 65 mA1) 6 V d" VI d" 28 V
Iq = II  IQ IQ = 500 mA
Current consumption Iq   80 mA1) VI d" 6V
Iq = II  IQ IQ = 500 mA
Drop voltage VDR  0.35 0.5 V VI = 4.5 V; IQ =0.5A
Drop voltage VDR  0.2 0.3 V VI = 4.5 V; IQ =0.15A
Load regulation " VQ  15 35 mV 25 mA d" IQ d" 500 mA
Supply-voltage regulation " VQ  15 50 mV VI d" 6 V to 28 V;
IQ = 100 mA
Supply-voltage regulation " VQ  5 25 mV VI d" 6 V to 16 V;
IQ = 100 mA
Ripple rejection
SVR  54  dB f = 100 Hz;
Vr =0.5Vpp
Temperature drift of Ä…  2 ×  1/° C 
VQ
output voltage1) 10 4
Standby Operation
Quiscent current; Iq  500 700 µ A 10 V d" VI d" 16 V;
Iq = II  IQ IQ =0 mA
Quiscent current; Iq  750 850 µ A 10 V d" VI d" 16 V;
Iq = II  IQ IQ =5 mA
Semiconductor Group 6 1998-11-01
TLE 4260
Characteristics (cont d)
VI = 13.5 V; Tj =25 ° C; (unless otherwise specified)
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Standby Off/Normal On
Current consumption IqSOFF  1.0 1.2 mA see test diagram
Current consumption IqNON  1.7 2.2 mA see test diagram
Normal Off/Standby On
Current consumption IqNOFF  1.55 2.00 mA see test diagram
Current consumption IqSON  850 1050 µ A see test diagram
Switching threshold IQNOFF 7.5 10 12.5 mA see test diagram
Switching hysteresis " IQ 2.25 3 4 mA see test diagram
Reset Generator
Switching threshold VRT 94 96 97 % in % of VQ;
IQ >500mA;VI =6 V
Saturation voltage VR  0.25 0.40 V IR =3mA;VI =4.5V
Reverse current IR   1 µ A VR =5V
Charge current ID 7 10 13 µ A 
Switching threshold VST 0.9 1.1 1.3 V 
Delay switching threshold VDT 2.15 2.50 2.75 V 
Delay time tD  25  ms CD = 100 nF
Delay time tt  5  µ s CD = 100 nF
General Data
Turn-Off voltage VIOFF 40 43 45 V IQ <1mA
Turn-Off hysteresis " VI  3.0  V 
Leakage current IQS  500  µ A VQ = 0V; VI = 45 V
Reverse output current IQR   1.5 mA VQ = 5V; VI = open
1)
See diagram
Semiconductor Group 7 1998-11-01
TLE 4260
15
Output
Input
6V to 40V
4
22 µ F
100 k&!
TLE 4260
470 nF 100 nF
2
RESET
3
AES00579
Application Circuit
™ ™ /™ /™ ™
™ Q SC QS QR
15
1000 µ F 470 nF 22 F
µ
1.8 k&!
TLE 4260-2
VQ
V™ +VR
™
R
2
43
VR
™ ™
d GND
VC Cd
100 nF
AES01509
VDr = V™ +VQ
VR
SVR = 20 log
" VQ
Test Circuit
Semiconductor Group 8 1998-11-01
TLE 4260
Time Responce
Semiconductor Group 9 1998-11-01
TLE 4260
Time Responce in Standby Condition
Semiconductor Group 10 1998-11-01
TLE 4260
Standby/Normal Changeover Output Voltage versus Temperature
AED00583
AED00028
2.5
5.20
™ VQ V
mA
5.10
2.0
V™ = 13.5 V
™
N ON
5.00
™
N OFF
1.5
4.90
™
1.0
S OFF
™
S ON
4.80
"™
Q
0.5
4.70
™ ™
QN OFF QN ON
0
4.60
7 8 9 10 11 12 13 14 mA 16
-40 0 40 80 120 C 160
™
j
Q
Drop Voltage versus Output Current Current Consumption versus
Output Current
AED00585
AED00584
80
800
DDr mV mA
™
70
700
60
600
V™ = 4.5 V
V™ = 13.5 V
Tj = 25 C
50
500
40
400
30
300
20
200
10
100
0
0
0 100 200 300 400 mA 600
0 100 200 300 400 mA 600
™
™
Q
Q
Semiconductor Group 11 1998-11-01
TLE 4260
Current Consumption versus Output Voltage versus Input Voltage
Input Voltage
AED00590 AED00591
120 12
VQ V
™
mA
100 10
RL= 10 &! RL= 10 &!
80 8
60 6
40 4
20 2
0 0
0 10 20 30 40 V 50 0 2 4 6 8 V 10
V™ V™
Output Current versus Input Voltage
AED00587
1.2
™
Q
A
1.0
Tj = 25 C
0.8
0.6
0.4
0.2
0
0 10 20 30 40 V 50
V™
Semiconductor Group 12 1998-11-01
TLE 4260
Package Outlines
P-TO220-5-1
(Plastic Transistor Single Outline)
10+0.4 4.6-0.2
10.2-0.2
1x45Ú
3.75+0.1
1.27+0.1
2.6
15
1.7
0.4+0.1
0.8+0.1 1)
Ä…0.4
4.5
0.6 M
Ä…0.4
8.4
5x
1) 1-0.15 at dam bar (max 1.8 from body)
1) 1-0.15 im Dichtstegbereich (max 1.8 vom Körper)
Weigth approx. 2.1 g
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book  Package Information .
Dimensions in mm
Semiconductor Group 13 1998-11-01
2.8
Ä…0.3
15.4
-0.2
Ä…0.4
19.5 max
8.8
16
Ä…0.3
Ä…0.3
8.6
10.2
GPT05107
TLE 4260
P-TO220-5-1
(Plastic Transistor Single Outline)
10+0.4 4.6-0.2
10.2
-0.2
1x45Ú
3.75+0.1
1.27+0.1
15
1.7
0.4+0.1
0.8+0.1 1)
2.6Ä…0.15
0.6 M
5x
1) 1-0.15 at dam bar (max 1.8 from body)
1) 1-0.15 im Dichtstegbereich (max 1.8 vom Körper)
Weigth approx. 2.1 g
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book  Package Information .
Dimensions in mm
Semiconductor Group 14 1998-11-01
2.8
Ä…0.3
15.4
-0.2
8.8
Ä…0.2
Ä…0.2
10.9
12.9
GPT05256