FUJI POWER MOS-FET
2SK3341-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Equivalent circuit schematic
Drain-source voltage VDS 900
V
Continuous drain current ID Ä…10
A
Pulsed drain current ID(puls] Ä…40 Drain(D)
A
Gate-source voltage VGS Ä…30
V
Repetitive or non-repetitive IAR *2 10
A
Maximum Avalanche Energy EAV *1 648
mJ
Max. power dissipation PD 310
W
Gate(G)
Operating and storage Tch +150
°C
Source(S)
temperature range Tstg -55 to +150
<
*1 L=11.9mH, Vcc=90V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Min. Typ. Max. Units
Item Symbol Test Conditions
V
Drain-source breakdown voltaget V(BR)DSS ID=1mA VGS=0V 900
Gate threshold voltage VGS(th) ID=1mA VDS=VGS 2.5 3.0 3.5 V
Tch=25°C
VDS=900V 10 500 µA
Zero gate voltage drain current IDSS
VGS=0V Tch=125°C 0.2 1.0 mA
VGS=Ä…30V
Gate-source leakage current IGSS VDS=0V 10 100 nA
ID=5A VGS=10V
Drain-source on-state resistance RDS(on) 0.92 1.2 &!
Forward transcondutance gfs ID=5A VDS=25V 3.5 7 S
Input capacitance Ciss VDS=25V 2200 3300 pF
Output capacitance Coss VGS=0V 240 360
Reverse transfer capacitance Crss f=1MHz 115 173
ns
VCC=600V ID=10A 28 42
Turn-on time ton td(on)
70 105
tr VGS=10V
220 330
Turn-off time toff td(off)
RGS=10 &!
90 135
tf
120 180
Total gate charge QG Vcc=450V nC
36 54
Gate-Source charge QGS ID=10A
40 60
Gete-Drain charge QGD VGS=10V
10
Avalanche capability IAV L=11.9mH Tch=25°C A
1.00 1.50
Diode forward on-voltage VSD IF=2xIDR VGS=0V Tch=25°C V
1.8
Reverse recovery time trr IF=IDR VGS=0V µs
21.0
Qrr -dIF/dt=100A/µs
Reverse recovery charge Tch=25°C µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 0.403 °C/W
Thermal resistance
Rth(ch-a) channel to ambient
50.0 °C/W
1
2SK3341-01
FUJI POWER MOSFET
Characteristics
Safe operating area
Allowable Power Dissipation
ID=f(VDS):Single Pulse,Tc=25°C
PD=f(Tc)
2
400 10
t=
350
1µ s
10µ s
300
1
10
250
100µ s
D.C.
200
1ms
150
0
10
10ms
100
t
t
100ms
D=
T
50
T
-1
0
10
1 2 3
0 25 50 75 100 125 150
10 10 10
VDS [V]
Tc [° C]
Typical Transfer Characteristic
Typical Output Characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
ID=f(VDS):80µs pulse test,Tch=25°C
22
20
18
10
20V
10V
16
7V
6.5V
14
6.0V
12
1
10
5.5V
8
6 5.0V 0.1
4
VGS=4.5V
2
0 0.01
0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 1 2 3 4 5 6 7 8
VDS [V]
VGS[V]
Typical Drain-Source on-state Resistance
Typical Transconductance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
3.0
VGS=
4.5V 5.0V 5.5V 6.0V
2.5
10
2.0
6.5V
7V
1.5
10V
1
20V
1.0
0.5
0.1
0.0
0.1 1 10 0 5 10 15 20 25
ID [A]
ID [A]
2
ID [A]
PD [W]
ID[A]
ID [A]
gfs [S]
RDS(on) [
&!
]
2SK3341-01
FUJI POWER MOSFET
Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch
RDS(on)=f(Tch):ID=5A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=1mA
5.0
4.0
4.5
3.5
4.0
3.0
max.
3.5
2.5
3.0
typ.
2.0 2.5
2.0
min.
1.5
max. typ.
1.5
1.0
1.0
0.5
0.5
0.0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
°
Tch [ C]
Tch [°C]
Typical Gate Charge Characteristics Typical Capacitance
VGS=f(Qg):ID=10A,Tch=25°C C=f(VDS):VGS=0V,f=1MHz
-7
25 10
20
-8
10
Vcc= 180V
15
Ciss
450V
720V
-9
10
10
Coss
-10
10 Crss
5
-11
0 10
-2 -1 0 1 2
0 50 100 150 200 250
10 10 10 10 10
Qg [C]
VDS [V]
Typical Forward Characteristics of Reverse Diode
Typical Switching Characteristics vs. ID
IF=f(VSD):80µs pulse test,Tch=25°C
t=f(ID):Vcc=600V,VGS=10V,RG=10 &!
3
100
10
td(off)
10
2
tf
10
1
tr
td(on)
0.1 1
10
0.00 0.25 0.50 0.75 1.00 1.25 1.50
-1 0 1
10 10 10
VSD [V]
ID [A]
3
VGS(th) [V]
RDS(on) [
&!
]
C [F]
VGS [V]
IF [A]
t [ns]
2SK3341-01
FUJI POWER MOSFET
Transient Thermal impedance
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A Zth(ch-c)=f(t) parameter:D=t/T
0
800
10
700
0.5
600 -1 0.2
10
0.1
500
0.05
0.02
400
-2 0.01
10
t
0
t
300 D=
T
T
200
-3
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
100
t [s]
0
0 25 50 75 100 125 150
°
starting Tch [ C]
4
Zth(ch-c) [K/W]
EAV [mJ]