2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-1
N-Channel JFET
PRODUCT SUMMARY
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
v
–8
–25
2
2
FEATURES
BENEFITS
APPLICATIONS
D
Excellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
D
Very Low Noise: 3 dB @ 400 MHz
D
Very Low Distortion
D
High ac/dc Switch Off-Isolation
D
High Gain: A
V
= 60 @ 100
m
A
D
Wideband High Gain
D
Very High System Sensitivity
D
High Quality of Amplification
D
High-Speed Switching Capability
D
High Low-Level Signal Amplification
D
High-Frequency Amplifier/Mixer
D
Oscillator
D
Sample-and-Hold
D
Very Low Capacitance Switches
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
–25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–55 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
300
_
C
. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/
_
C above 25
_
C
2N3819
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1
m
A , V
DS
= 0 V
–25
–35
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 2 nA
–3
–8
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
2
10
20
mA
V
GS
= –15 V, V
DS
= 0 V
–0.002
–2
nA
Gate Reverse Current
I
GSS
T
A
= 100
_
C
–0.002
–2
m
A
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA
–20
Drain Cutoff Current
I
D(off)
V
DS
= 10 V, V
GS
= –8 V
2
pA
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
150
W
Gate-Source Voltage
V
GS
V
DS
= 15 V, I
D
= 200
m
A
–0.5
–2.5
–7.5
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
f = 1 kHz
2
5.5
6.5
Common-Source Forward Transconductance
c
g
fs
V
DS
= 15 V
V
= 0 V
f = 100 MHz
1.6
5.5
mS
Common-Source Output Conductance
c
g
os
V
GS
= 0 V
f = 1 kHz
25
50
m
S
Common-Source Input Capacitance
C
iss
2.2
8
Common-Source Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
0.7
4
pF
Equivalent Input Noise Voltage
c
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 100 Hz
6
nV
⁄
√
Hz
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NH
b.
Pulse test: PW
v
300
m
s, duty cycle
v
2%.
c.
This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
0
–10
–6
300
0
100
60
0
r
DS
g
os
r
DS
@ I
D =
1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
0
–10
0
10
0
I
DSS
g
fs
V
GS(off)
– Gate-Source Cutoff Voltage (V)
80
40
20
400
100
200
–2
–4
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
6
8
4
2
–6
–2
–4
–8
12
16
4
8
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
g
fs
@ V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
gos
–
Output Conductance (
m
S)
I
DS
S
–
Saturation Drain Current (mA)
r
DS
(on)
–
Drain-Source On-Resistance (
Ω )
g
fs
–
Forward T
ransconductance (mS)
2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10
0
2
8
6
4
Gate Leakage Current
0
10
20
5 mA
0.1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
0.1 pA
0.1 mA
I
GSS
@ 25
_
C
T
A
= 25
_
C
T
A
= 125
_
C
5 mA
I
GSS
@
125
_
C
Output Characteristics
Output Characteristics
Common-Source Forward Transconductance
vs. Drain Current
0.1
1
10
10
2
0
V
GS
(off)
= –3 V
T
A
= –55
_
C
125
_
C
10
0
4
10
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.2 V
–1.0 V
V
GS
= 0 V
15
0
10
0
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
V
GS
= 0 V
–0.3 V
V
DG
– Drain-Gate Voltage (V)
I
D
– Drain Current (mA)
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
Transfer Characteristics
V
GS(off
)
= –2 V
T
A
= –55
_
C
125
_
C
V
GS
– Gate-Source Voltage (V)
Transfer Characteristics
T
A
= –55
_
C
125
_
C
V
GS(off)
= –3 V
8
6
4
V
DS
= 10 V
f = 1 kHz
V
GS
(off)
= –2 V
V
GS
(off)
= –3 V
2
8
6
4
2
6
8
4
2
6
8
3
12
9
6
V
DS
= 10 V
V
DS
= 10 V
10
0
2
8
6
4
0
–0.8
–2
0
–3
–0.4
–1.2
–1.6
–1.2
–0.6
–1.8
–2.4
1 mA
1 mA
25
_
C
25
_
C
25
_
C
–1.4 V
g
fs
–
Forward T
ransconductance (mS)
I
G
–
Gate Leakage
I
D
–
Drain Current (mA)
I
D
–
Drain Current (mA)
I
D
–
Drain Current (mA)
I
D
–
Drain Current (mA)
2N3819
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
0
–0.8
–2
8
0
V
GS(off)
= –2 V
T
A
= –55
_
C
125
_
C
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
10
–3
–0.6
0
0
T
A
= –55
_
C
125
_
C
V
GS(off)
= –3 V
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
0.1
1
10
300
0
T
A
= –55
_
C
–3 V
V
GS(off)
= –2 V
10
0.1
100
0
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
V
GS(off)
= –2 V
–3 V
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
0
–20
–4
0
f = 1 MHz
V
DS
= 0 V
V
DS
= 10 V
3.0
0
–20
0
V
DS
= 0 V
V
DS
= 10 V
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
f = 1 MHz
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
f = 1 kHz
6
4
2
240
180
120
60
8
6
4
2
80
60
40
20
1
–0.4
–1.6
–1.2
–1.2
–1.8
–2.4
4
3
2
1
–8
–12
–16
–4
–8
–12
–16
2.4
1.8
1.2
0.6
A
V
+
g
fs
R
L
1
)
R
L
g
os
25
_
C
25
_
C
g
fs
–
Forward T
ransconductance (mS)
g
fs
–
Forward T
ransconductance (mS)
r
DS
(on)
–
Drain-Source On-Resistance (
Ω )
A
V
–
V
oltage Gain
C
is
s
–
Input Capacitance (pF)
C
rss
–
Reverse Feedback Capacitance (pF)
2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
Output Admittance
Input Admittance
Forward Admittance
100
10
1
0.1
100
1000
b
is
g
is
T
A
= 25
_
C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(mS)
100
10
1
0.1
100
T
A
= 25
_
C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(mS)
–b
is
g
fs
10
1
0.1
0.01
T
A
= 25
_
C
V
DS
= 15 V
V
GS
= 0 V
Common Source
–b
rs
–g
rs
10
1
0.1
0.01
T
A
= 25
_
C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
os
g
os
f – Frequency (MHz)
f – Frequency (MHz)
f – Frequency (MHz)
f – Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
10
100
1 k
100 k
10 k
20
0
I
D
= 5 mA
V
DS
= 10 V
20
0
0.1
1
10
T
A
= –55
_
C
125
_
C
V
GS(off)
= –3 V
I
D
– Drain Current (mA)
f – Frequency (Hz)
(mS)
(mS)
200
500
1000
200
500
100
1000
100
200
500
1000
200
500
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –3 V
16
12
8
4
16
12
8
4
I
D
= I
DSS
25
_
C
e
n
–
Noise V
oltage nV
/ Hz
g
os
–
Output Conductance (
m
S)
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