©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC337/

338

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25

°

C unless otherwise noted

Electrical Characteristics

T

a

=25

°

C unless otherwise noted

h

FE

Classification

Symbol

Parameter

Value

Units

V

CES

Collector-Emitter Voltage

: BC337
: BC338

50
30

V
V

V

CEO

Collector-Emitter Voltage

: BC337
: BC338

45
25

V
V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current (DC)

800

mA

P

C

Collector Power Dissipation

625

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BV

CEO

Collector-Emitter Breakdown Voltage

: BC337
: BC338

I

C

=10mA, I

B

=0

45
25

V
V

BV

CES

Collector-Emitter Breakdown Voltage

: BC337
: BC338

I

C

=0.1mA, V

BE

=0

50
30

V
V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=0.1mA, I

C

=0

5

V

I

CES

Collector Cut-off Current

: BC337
: BC338

V

CE

=45V, I

B

=0

V

CE

=25V, I

B

=0

2
2

100
100

nA
nA

h

FE1

h

FE2

DC Current Gain

V

CE

=1V, I

C

=100mA

V

CE

=1V, I

C

=300mA

100

60

630

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

=500mA, I

B

=50mA

0.7

V

V

BE

(on)

Base Emitter On Voltage

V

CE

=1V, I

C

=300mA

1.2

V

f

T

Current Gain Bandwidth Product

V

CE

=5V, I

C

=10mA, f=50MHz

100

MHz

C

ob

Output Capacitance

V

CB

=10V, I

E

=0, f=1MHz

12

pF

Classification

16

25

40

h

FE1

100 ~ 250

160 ~ 400

250 ~ 630

h

FE2

60-

100-

170-

BC337/338

Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328

1. Collector 2. Base 3. Emitter

TO-92

1

Package Dimensions

BC337/

338

0.46

±

0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±

0.20

]

1.27TYP

[1.27

±

0.20

]

3.60

±

0.20

14.47

±

0.40

1.02

±

0.10

(0.25)

4.58

±

0.20

4.58

+0.25
–0.15

0.38

+0.10
–0.05

0.38

+0.10

–0.05

TO-92

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

©2002 Fairchild Semiconductor Corporation

Rev. I1

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