©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC807/

BC808

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25

°

C unless otherwise noted

Electrical Characteristics

T

a

=25

°

C unless otherwise noted

Symbol

Parameter

Value

Units

V

CES

Collector-Emitter Voltage

: BC807
: BC808

-50
-30

V
V

V

CEO

Collector-Emitter Voltage

: BC807
: BC808

-45
-25

V
V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current (DC)

-800

mA

P

C

Collector Power Dissipation

-310

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-65 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BV

CEO

Collector-Emitter Breakdown Voltage

: BC807
: BC808

I

C

= -10mA, I

B

=0

-45
-25

V
V

BV

CES

Collector-Emitter Breakdown Voltage

: BC807
: BC808

I

C

= -0.1mA, V

BE

=0

-50
-30

V
V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

= -0.1mA, I

C

=0

-5

V

I

CES

Collector Cut-off Current

V

CE

= -25V, V

BE

=0

-100

nA

I

EBO

Emitter Cut-off Current

V

EB

= -4V, I

C

=0

-100

nA

h

FE1

h

FE2

DC Current Gain

V

CE

= -1V, I

C

= -100mA

V

CE

= -1V, I

C

= -300mA

100

60

630

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

= -500mA, I

B

= -50mA

-0.7

V

V

BE

(on)

Base-Emitter On Voltage

V

CE

= -1V, I

C

= -300mA

-1.2

V

f

T

Current Gain Bandwidth Product

V

CE

= -5V, I

C

= -10mA

f=50MHz

100

MHz

C

ob

Output Capacitance

V

CB

= -10V, f=1MHz

12

pF

BC807/BC808

Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818

SOT-23

1. Base 2. Emitter 3. Collector

1

2

3

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC807/

BC808

h

FE

Classification

Marking Code

Classification

16

25

40

h

FE1

100 ~ 250

160 ~ 400

250 ~ 630

h

FE2

60-

100-

170-

Type

807-16

807-25

807-40

808-16

808-25

808-40

Marking

9FA

9FB

9FC

9GA

9GB

9GC

©2002 Fairchild Semiconductor Corporation

BC807/

BC808

Rev. A2, August 2002

Typical Characteristics

Figure 1. Static Characteristic

Figure 2. Static Characteristic

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage

Figure 6. Input Output Capacitance

-0

-1

-2

-3

-4

-5

-0

-100

-200

-300

-400

-500

P

T

= 600m

W

I

B

= -

3.0

mA

I

B

= -

2.0

mA

I

B

= -

3.5

mA

I

B

= - 1.0mA

I

B

= - 1.

5mA

I

B

= - 0.5mA

I

B

= -

4.0

mA

I

B

= -

2.5

mA

I

B

= -

4.5

mA

I

B

= -

5.0

mA

I

B

= 0

I

C

[m

A],

COL

L

ECT

O

R

CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0

-10

-20

-30

-40

-50

-0

-4

-8

-12

-16

-20

P

T

= 60

0m

W

I

B

= -

80

µ

A

I

B

= -

70

µ

A

I

B

= -

60

µ

A

I

B

= -

50

µ

A

I

B

= -

40

µ

A

I

B

= - 3

0

µ

A

I

B

= - 20

µ

A

I

B

= - 10

µ

A

I

B

= 0

I

C

[m

A]

, CO

L

L

E

CT

OR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0.1

-1

-10

-100

-1000

1

10

100

1000

PULSE

- 1.0V

V

CE

= - 2.0V

h

FE

, DC C

URRENT

GAI

N

I

C

[mA], COLLECTOR CURRENT

-0.1

-1

-10

-100

-1000

-0.01

-0.1

-1

-10

I

C

= 10 I

B

PULSE

V

CE

(sat)

V

BE

(sat)

V

BE

(s

a

t),

V

CE

(s

at)

[V

], S

A

T

URA

T

ION

V

O

LT

A

G

E

I

C

[mA], COLLECTOR CURRENT

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-0.1

-1

-10

-100

-1000

V

CE

= -1V

PULSE

I

C

[m

A

], CO

LL

E

C

T

O

R CUR

RE

NT

V

BE

[V], BASE-EMITTER VOLTAGE

-0.1

-1

-10

-100

1

10

100

C

ib

f = 1.0MHz

C

ob

C

ib

, C

ob

[p

F

], C

APAC

IT

AN

C

E

V

CB

[V], COLLECTOR-BASE VOLTAGE

V

EB

[V], EMITTER-BASE VOLTAGE

©2002 Fairchild Semiconductor Corporation

BC807/

BC808

Rev. A2, August 2002

Typical Characteristics

(Continued)

Figure 7. Current Gain Bandwidth Product

-1

-10

-100

10

100

1000

V

CE

= -5.0V

f

T

[M

H

z

], G

A

IN BANDW

ID

T

H

PRO

DUC

T

I

C

[mA], COLLECTOR CURRENT

0.96~1.14

0.12

0.03~0.10

0.38 REF

0.40

±

0.03

2.90

±

0.10

0.95

±

0.03

0.95

±

0.03

1.90

±

0.03

0.508REF

0.97REF

1.30

±

0.10

0.45~0.60

2.40

±

0.10

+0.05
–0.023

0.20 MIN

0.40

±

0.03

SOT-23

Package Dimensions

BC807/

BC808

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

©2002 Fairchild Semiconductor Corporation

Rev. I1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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