Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
Ptot Total power dissipation Ths d" 25 ÚC - 45 W
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
ICsat Collector saturation current 6.0 - A
tf Fall time ICsat = 6.0 A; IB(end) = 0.85 A 0.2 0.35 µs
PINNING - SOT199 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
c
case
1 base
2 collector
b
3 emitter
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
IB Base current (DC) - 6 A
IBM Base current peak value - 9 A
-IB(AV) Reverse base current average over any 20 ms period - 150 mA
-IBM Reverse base current peak value 1 - 6 A
Ptot Total power dissipation Ths d" 25 ÚC - 45 W
Tstg Storage temperature -65 150 ÚC
Tj Junction temperature - 150 ÚC
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W
1 Turn-off current.
September 1997 1 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ÚC unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. d" 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
Ths = 25 ÚC unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ÚC
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
VBEsat Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.1 V
hFE DC current gain IC = 100 mA; VCE = 5 V - 13 -
hFE IC = 6 A; VCE = 5 V 5 7 9.5
DYNAMIC CHARACTERISTICS
Ths = 25 ÚC unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (32 kHz line ICsat = 6.0 A; LC = 330 µH; Cfb = 9 nF;
deflection circuit) IB(end) = 0.85 A; LB = 3.45 µH;
-VBB = 4 V; (-dIB/dt = 1.2 A / µs)
ts Turn-off storage time 3.0 4.0 µs
tf Turn-off fall time 0.2 0.35 µs
Switching times (16 kHz line ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit) IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
ts Turn-off storage time 4.5 5.5 µs
tf Turn-off fall time 0.35 0.5 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
ICsat
TRANSISTOR
+ 50v
IC DIODE
100-200R
t
IBend
IB
Horizontal
t
Oscilloscope
10us 13us
Vertical
32us
1R
100R
VCE
6V
30-60 Hz
t
Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (32 kHz).
IC / mA
ICsat
90 %
IC
250
10 %
200
tf
t
ts
IB
IBend
100
t
0
min
VCE / V
VCEOsust - IBM
Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times definitions.
ICsat
+ 150 v nominal
TRANSISTOR
adjust for ICsat
IC DIODE
t
Lc
IBend
IB
t
20us 26us
LB T.U.T.
IBend
Cfb
64us
VCE
-VBB
t
Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit.
September 1997 3 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
hFE VBESAT / V
100 1.2
Tj = 25 C
Tj = 25 C
Tj = 125 C
1.1
5 V Tj = 125 C
1
10 0.9
1 V
IC=
0.8
8 A
6 A
0.7
5 A
4 A
1 0.6
0.1 1 10 100 0 1 2 3 4
IC / A IB / A
Fig.7. Typical DC current gain. hFE = f (IC) Fig.10. Typical base-emitter saturation voltage.
parameter VCE VBEsat = f (IB); parameter IC
VBESAT / V VCESAT / V
1.2 10
Tj = 25 C
Tj = 25 C
1.1
Tj = 125 C
Tj = 125 C
1
0.9
8 A
0.8 1
6 A
IC/IB=
0.7
5 A
3
0.6
4
IC = 4 A
0.5
5
0.4 0.1
0.1 1 10 0.1 1 10
IC / A IB / A
Fig.8. Typical base-emitter saturation voltage. Fig.11. Typical collector-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB VCEsat = f (IB); parameter IC
VCESAT / V Eoff / uJ
1000
1
IC/IB =
0.9
5
0.8 IC = 6 A
4 32 kHz
0.7
3
0.6 16 kHz
5 A
0.5 100
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0 10
0.1 1 10 100 0.1 1 10
IC / A IB / A
Fig.9. Typical collector-emitter saturation voltage. Fig.12. Typical turn-off losses. Tj = 85ÚC
VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC; parameter frequency
September 1997 4 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
Normalised Power Derating
ts, tf / us
PD%
12 120
with heatsink compound
11 110
ts
16 kHz
10 100
90
9
8 80
70
7
60
6
IC = 50
5
40
4
6 A
30
3
5 A 20
2
tf
10
1
0
0
0.1 1 10 0 20 40 60 80 100 120 140
IB / A Ths / C
Fig.13. Typical collector storage and fall time. Fig.15. Normalised power dissipation.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85ÚC; f = 16 kHz PD% = 100Å"PD/PD 25ÚC = f (Ths)
Zth / (K/W)
ts, tf / us
10
12
11
32 kHz
10
0.5
1
9
0.2
ts
8
0.1
7
0.05
0.1
6
0.02
5
IC =
4
tp
6 A PD D = tp
0.01
3
T
2
5 A
tf
1
D = 0
t
T
0.001
0
0.1 1 10 1E-06 1E-04 1E-02 1E+00
IB / A t / s
Fig.14. Typical collector storage and fall time. Fig.16. Transient thermal impedance.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85ÚC; f = 32 kHz Zth j-hs = f(t); parameter D = tp/T
September 1997 5 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
IC / A BU2520AF
100
tp =
ICM
= 0.01
30 us
ICDC
10
100 us
Ptot
1
1 ms
0.1
10 ms
DC
0.01
1 10 100 1000 VCE / V
Fig.17. Forward bias safe operating area. Ths = 25 ÚC
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997 6 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
MECHANICAL DATA
Dimensions in mm
15.3 max
5.2 max
Net Mass: 5.5 g
3.1
0.7
3.3 3.2
7.3
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
3.5
not tinned
15.7
min
123
1.2 0.7 max
2.1 max
1.0
0.4 M
2.0
5.45 5.45
Fig.18. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997 7 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AF
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 8 Rev 1.500