SMBT2907A/MMBT2907A

1

Feb-10-2005

PNP Silicon Switching Transistor

•

High DC current gain: 0.1mA to 500 mA

•

Low collector-emitter saturation voltage

•

Complementary type:

SMBT2222A/ MMBT2222A (NPN)

1

2

3

VPS05161

Type

Marking

Pin Configuration

Package

SMBT2907A/MMBT2907A s2F

1=B

2=E

3=C

SOT23

Maximum Ratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

CEO

60

V

Collector-base voltage

V

CBO

60

Emitter-base voltage

V

EBO

5

DC collector current

I

C

600

mA

Base current

I

B

60

mA

Peak base current

I

BM

120

Total power dissipation

,

T

S

= 77 °C

P

tot

330

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

-65 ... 150

Thermal Resistance
Junction - soldering point

1)

R

thJS

≤

220

K/W

1For calculation of R

thJA

please refer to Application Note Thermal Resistance

SMBT2907A/MMBT2907A

2

Feb-10-2005

Electrical Characteristicsn at T

A

= 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 10 mA,

I

B

= 0

V

(BR)CEO

60

-

-

V

Collector-base breakdown voltage

I

C

= 10 µA,

I

E

= 0

V

(BR)CBO

60

-

-

Emitter-base breakdown voltage

I

E

= 10 µA,

I

C

= 0

V

(BR)EBO

5

-

-

Collector cutoff current

V

CB

= 50 V,

I

E

= 0

I

CBO

-

-

10

nA

Collector cutoff current

V

CB

= 50 V,

I

E

= 0 ,

T

A

= 150 °C

I

CBO

-

-

10

µA

Emitter cutoff current

V

EB

= 3 V,

I

C

= 0

I

EBO

-

-

10

nA

DC current gain 1)

I

C

= 100 µA,

V

CE

= 10 V

I

C

= 1 mA,

V

CE

= 10 V

I

C

= 10 mA,

V

CE

= 10 V

I

C

= 150 mA,

V

CE

= 10 V

I

C

= 500 mA,

V

CE

= 10 V

h

FE

75

100
100
100

50

-
-
-
-
-

-
-
-

300

-

-

Collector-emitter saturation voltage1)

I

C

= 150 mA,

I

B

= 15 mA

I

C

= 500 mA,

I

B

= 50 mA

V

CEsat

-
-

-
-

0.4
1.6

V

Base-emitter saturation voltage 1)

I

C

= 150 mA,

I

B

= 15 mA

I

C

= 500 mA,

I

B

= 50 mA

V

BEsat

-
-

-
-

1.3
2.6

1) Pulse test: t

≤

300

µ

s, D = 2%

SMBT2907A/MMBT2907A

3

Feb-10-2005

Electrical Characteristics at T

A

= 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Transition frequency

I

C

= 20 mA,

V

CE

= 20 V,

f

= 100 MHz

f

T

200

-

-

MHz

Collector-base capacitance

V

CB

= 10 V,

f

= 1 MHz

C

cb

-

-

8

pF

Emitter-base capacitance

V

EB

= 0.5 V,

f

= 1 MHz

C

eb

-

-

30

Delay time

V

CC

= 30 V,

I

C

= 150 mA,

I

B1

= 15 mA,

V

BE(off)

= 0.5 V

t

d

-

-

10

ns

Rise time

V

CC

= 30 V,

I

C

= 150 mA,

I

B1

= 15 mA,

V

BE(off)

= 0.5 V

t

r

-

-

40

Storage time

V

CC

= 30 V,

I

C

= 150 mA, I

B1

=I

B2

= 15mA

t

stg

-

-

80

Fall time

V

CC

= 30 V,

I

C

= 150 mA, I

B1

=I

B2

=

15mA

t

f

-

-

30

SMBT2907A/MMBT2907A

4

Feb-10-2005

Test circuits

Delay and rise time

EHN00053

200

-30

Ω

V

Osc.

< 5 ns

t

r

ns

200

= 50

< 2ns

Input

r

Z

t

0

Ω

0
-16 V

1

Ω

k

50

Ω

Storage and fall time

EHN00069

200

-30

-30

0

+15 V

1

Ω

Ω

k

V

V

< 2 ns

= 50

Input

t

Z

r

0

Ω

200 ns

1

Ω

k

50

Ω

Osc.

< 5 ns

t

r

Oscillograph: R > 100

Ω

, C < 12pF, t

r

< 5ns

SMBT2907A/MMBT2907A

5

Feb-10-2005

Collector-base capacitance C

CB

= f (V

CB

)

f = 1MHz

EHP00747

SMBT 2907/A

10

pF

10

10

V

C

CB

10

5

10

cb

5

5

5

-1

0

1

2

10

2

1

10

0

5

V

Total power dissipation P

tot

= f(T

S

)

0

15

30

45

60

75

90 105 120

°C

150

T

S

0

30

60

90

120

150

180

210

240

270

300

mW

360

P

tot

Transition frequency f

T

= f (I

C

)

V

CE

= 5V

EHP00749

SMBT 2907/A

10

MHz

10

10

mA

f

C

10

5

10

T

5

5

5

Ι

0

1

2

3

10

3

2

10

1

5

Permissible pulse load
P

totmax

/ P

totDC

= f (t

p

)

10

EHP00748

SMBT 2907/A

-6

0

10

5

D =

5

10

1

5

10

2

3

10

10

-5

10

-4

10

-3

10

-2

10

0

s

0
0.005
0.01
0.02
0.05
0.1
0.2
0.5

tot max

tot

P

DC

P

p

t

t

p

=

D

T

t

p

T

SMBT2907A/MMBT2907A

6

Feb-10-2005

Delay time t

d

= f (I

C

)

Rise time t

r

= f (I

C

)

EHP00751

SMBT 2907/A

10

10

mA

t

C

5

r

10

3

2

10

1

5

10

10

0

1

2

Ι

5

5

ns

BE

V

t

d

,

= 0 V

3

10

5

t

d

t

r

,

= 10 V

CC

V

,

CC

= 20 V

BE

V

V

,

= 30 V

Saturation voltage I

C

= f (V

BEsat

, V

CEsat

)

h

FE

= 10

EHP00750

SMBT 2907/A

10

0

V

BE sat

C

10

3

1

10

-1

5

10

0

5

Ι

V

mA

0.2

0.4

0.6

0.8

1.0

1.2

1.6

CE sat

V

,

5

10

2

V

BE

V

CE

10

-2

Storage time t

stg

= f(I

C

)

EHP00752

SMBT 2907/A

10

10

mA

t

C

5

stg

10

3

2

10

1

5

10

10

0

1

2

Ι

5

5

ns

FE

h

= 10

3

10

5

FE

= 20

h

Fall time t

f

= f (I

C

)

EHP00753

SMBT 2907/A

10

10

mA

t

C

5

f

10

3

2

10

1

5

10

10

0

1

2

Ι

5

5

ns

FE

h

= 10

3

10

5

FE

= 20

h

V

CC

= 30 V

SMBT2907A/MMBT2907A

7

Feb-10-2005

DC current gain h

FE

= f (I

C

)

V

CE

= 5V

EHP00754

SMBT 2907/A

10

10

mA

h

C

10

5

FE

10

3

2

10

1

5

10

10

10

-1

0

1

2

3

Ι

-50 ˚C

25 ˚C

150 ˚C

Package SOT23

P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t

P a c k i n g

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

2.6 MAX.

0.25

M

B C

1.9

-0.05

+0.1

0.4

1

A

2

±0.1

3

2.9

DIN 6784

+0.2

acc. to

0.95

C

B

2˚ 30˚

0.20

...

M

A

0.1 MAX.

10

˚

0.08...0.15

1.1 MAX.

1.3

±0.1

MAX.

10

˚

MAX.

0.8

1.2

0.9

1.1

0.9

0.8

Manufacturer

Date code (Year/Month)

Type code

2003, July

BCW66

Example

Pin 1

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Impressum

Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.