2N3055, MJ2955 (ON Semiconductor)

Semiconductor Components Industries, LLC, 2005

May 5, 2005 − Rev. 5

Publication Order Number:

2N3055/D

2N3055(NPN), MJ2955(PNP)

Preferred Device

Complementary Silicon

Power Transistors

. . . designed for general−purpose switching and amplifier

applications.

•

DC Current Gain − h

= 20 −70 @ I

= 4 Adc

•

Collector−Emitter Saturation Voltage −

CE(sat)

= 1.1 Vdc (Max) @ I

= 4 Adc

•

Excellent Safe Operating Area

•

Pb−Free Packages are Available

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

CEO

ÎÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

CER

ÎÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage

ÎÎÎ

ÎÎÎÎÎ

100

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎ

ÎÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

ÎÎÎ

ÎÎÎÎÎ

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎ

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ T

= 25

Derate above 25

ÎÎÎ

ÎÎÎÎÎ

115

0.657

ÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Tempera-
ture Range

ÎÎÎ

, T

stg

ÎÎÎÎÎ

– 65 to + 200

ÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎ

ÎÎÎÎÎ

1.52

ÎÎ

C/W

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

160

100

125

150

175

200

Figure 1. Power Derating

, CASE TEMPERATURE (°C)

D, POWER DISSIP

ATION (W

ATTS)

140

120

100

15 A

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 V

115 W

http://onsemi.com

Preferred devices are recommended choices for future use
and best overall value.

Device

Package

Shipping

†

ORDERING INFORMATION

2N3055

TO−204AA

100 Units / Tray

MJ2955G

TO−204AA

(Pb−Free)

TO−204AA (TO−3)

CASE 1−07

100 Units / Tray

MARKING
DIAGRAM

xxxx55 = Device Code

xxxx= 2N3055 or MJ2955

= Assembly Location

= Year

= Work Week

= 1, 2, or 3

xxxx55

YYWW

2N3055G

TO−204AA

(Pb−Free)

100 Units / Tray

MJ2955

TO−204AA

100 Units / Tray

*For additional information on our Pb−Free strategy

and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS

= 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

*OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)
(I

= 200 mAdc, I

= 0)

CEO(sus)

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1)
(I

= 200 mAdc, R

= 100

)

CER(sus)

−

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current
(V

= 30 Vdc, I

= 0)

ÎÎÎÎÎ

CEO

ÎÎÎ

−

ÎÎÎÎ

0.7

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current
(V

= 100 Vdc, V

BE(off)

= 1.5 Vdc)

= 100 Vdc, V

BE(off)

= 1.5 Vdc, T

= 150

ÎÎÎÎÎ

CEX

ÎÎÎ

−
−

ÎÎÎÎ

1.0
5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current
(V

= 7.0 Vdc, I

= 0)

ÎÎÎÎÎ

EBO

ÎÎÎ

−

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ON CHARACTERISTICS (Note 1)

DC Current Gain
(I

= 4.0 Adc, V

= 4.0 Vdc)

= 10 Adc, V

= 4.0 Vdc)

5.0

−

Collector−Emitter Saturation Voltage
(I

= 4.0 Adc, I

= 400 mAdc)

= 10 Adc, I

= 3.3 Adc)

CE(sat)

−

1.1
3.0

Vdc

Base−Emitter On Voltage
(I

= 4.0 Adc, V

= 4.0 Vdc)

BE(on)

−

1.5

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased
(V

= 40 Vdc, t = 1.0 s, Nonrepetitive)

ÎÎÎÎÎ

s/b

ÎÎÎ

2.87

ÎÎÎÎ

−

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product
(I

= 0.5 Adc, V

= 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

ÎÎÎ

2.5

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Small−Signal Current Gain
(I

= 1.0 Adc, V

= 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

120

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Small−Signal Current Gain Cutoff Frequency
(V

= 4.0 Vdc, I

= 1.0 Adc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

kHz

*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

Figure 2. Active Region Safe Operating Area

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

6
4

0.6
0.4

0.2

I C

, COLLECT

OR CURRENT

(AMP)

500 ms

1 ms

250 ms

50 ms

BONDING WIRE LIMIT
THERMALLY LIMITED @ T

= 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

− V

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 2 is based on T

= 25

°C; T

J(pk)

variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

V CE

, COLLECT

OR−EMITTER VOL

TAGE (VOL

TS)

V CE

, COLLECT

OR−EMITTER VOL

TAGE (VOL

TS)

500

0.1

Figure 3. DC Current Gain, 2N3055 (NPN)

, COLLECTOR CURRENT (AMP)

5.0

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0

100

30
20

200

h FE

, DC CURRENT

GAIN

= 150°C

25°C

−55 °C

= 4.0 V

200

0.1

, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0

100

h FE

, DC CURRENT

GAIN

= 150°C

25°C

−55 °C

= 4.0 V

7.0

300

7.0

Figure 4. DC Current Gain, MJ2955 (PNP)

2.0

5.0

, BASE CURRENT (mA)

100

200

500

1000 2000

5000

1.6

1.2

0.8

0.4

= 1.0 A

= 25°C

4.0 A

8.0 A

2.0

, BASE CURRENT (mA)

1.6

1.2

0.8

0.4

1.4

0.1

, COLLECTOR CURRENT (AMPERES)

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0

1.0

0.6

0.4

0.2

= 25°C

BE(sat)

@ I

= 10

CE(sat)

@ I

= 10

VOL

TAGE (VOL

TS)

Figure 5. Collector Saturation Region,

2N3055 (NPN)

1.2

0.8

7.0

@ V

= 4.0 V

2.0

0.1

, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5

1.0

2.0

3.0

5.0

1.2

0.4

= 25°C

BE(sat)

@ I

= 10

CE(sat)

@ I

= 10

VOL

TAGE (VOL

TS)

1.6

0.8

@ V

= 4.0 V

5.0

100

200

500

1000 2000

5000

= 1.0 A

= 25°C

4.0 A

8.0 A

Figure 6. Collector Saturation Region,

MJ2955 (PNP)

Figure 7. “On” Voltages, 2N3055 (NPN)

Figure 8. “On” Voltages, MJ2955 (PNP)

2N3055(NPN), MJ2955(PNP)

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

1.550 REF

39.37 REF

−−−

1.050

−−−

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

−−−

0.830

−−−

21.08

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

−T−

SEATING

PLANE

2 PL

0.13 (0.005)

−Q−

−Y−

TO−204 (TO−3)

CASE 1−07

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free
USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850

2N3055/D

LITERATURE FULFILLMENT:

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For additional information, please contact your
local Sales Representative.

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