2SC3199

background image

Elektronische Bauelemente

2SC3199

0.15 A , 50 V

NPN Plastic-Encapsulated Transistor

31-Jul-2012 Rev. D

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free


FEATURES

High Current Capability

High DC Current Gain

Small Package

APPLICATIONS

Audio Amplifier Applications

AM Amplifier Applications

CLASSIFICATION OF h

FE

Product-Rank

2SC3199-O 2SC3199-Y 2SC3199-GR

Range

70~140 120~240 200~400

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter Symbol

Rating Unit

Collector to Base Voltage

V

CBO

50

V

Collector to Emitter Voltage

V

CEO

50

V

Emitter to Base Voltage

V

EBO

5

V

Collector Current - Continuous

I

C

150

mA

Collector Power Dissipation

P

C

400

mW

Thermal Resistance From Junction To Ambient

R

θJA

312

°C / W

Junction, Storage Temperature

T

J

, T

STG

150,

-55~150

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter Symbol

Min.

Typ.

Max.

Unit

Test

Condition

Collector to Base Breakdown Voltage

V

(BR)CBO

50 -

- V

I

C

=0.1mA, I

E

=0

Collector to Emitter Breakdown Voltage

V

(BR)CEO

50 - - V

I

C

=1mA, I

B

=0

Emitter to Base Breakdown Voltage

V

(BR)EBO

5 - - V

I

E

=0.1mA, I

C

=0

Collector Cut – Off Current

I

CBO

- -

0.1

μA V

CB

=50V, I

E

=0

Emitter Cut – Off Current

I

EBO

- -

0.1

μA V

EB

=5V, I

C

=0

DC Current Gain

h

FE

70 - 400

V

CE

=6V, I

C

=2mA

Collector to Emitter Saturation Voltage

V

CE(sat)

- -

0.25

V

I

C

=100mA, I

B

=10mA

Collector Output Capacitance

C

ob

- -

3.5

pF

V

CB

=10V, I

E

=0, f=1MHz

Transition Frequency

f

T

80 - -

MHz

V

CE

=10V, I

C

=1mA

TO-92S

Millimeter

REF.

Min.

Max.

A 3.90

4.10

B 3.05

3.25

C 1.42

1.62

D 15.1

15.5

E 2.97

3.27

F 0.66

0.86

G 2.44

2.64

H 1.27

REF.

J 0.36

0.48

K 0.36

0.51

L 45°

background image

Elektronische Bauelemente

2SC3199

0.15 A , 50 V

NPN Plastic-Encapsulated Transistor

31-Jul-2012 Rev. D

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

CHARACTERISTIC CURVES
































background image

Elektronische Bauelemente

2SC3199

0.15 A , 50 V

NPN Plastic-Encapsulated Transistor

31-Jul-2012 Rev. D

Page 3 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

CHARACTERISTIC CURVES


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