1996. 5. 30

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTC3199

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION.

FEATURES

ᴌHigh DC Current Gain : h

FE

=70~700.

ᴌExcellent h

FE

Linearity

: h

FE

(0.1mA)/h

FE

(2mA)=0.95(Typ.).

ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).

ᴌComplementary to KTA1267.

MAXIMUM RATING (Ta=25ᴱ)

1

2

3

TO-92M

DIM MILLIMETERS

A
B
C
D

E
F

G
H

J

K

1. EMITTER

2. COLLECTOR

3. BASE

3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15

1.27
2.30

14.00 0.50

0.60 MAX

1.05
1.45

25

0.55 MAX

L

M

N

F

A

G

J

K

D

E

E

L

N

M

C

H

0.80

O

0.75

O

B

+_

+_

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

Note : h

FE

Classification O:70ᴕ140 , Y:120ᴕ240 , GR:200ᴕ400, BL:300~700.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

V

CBO

50

V

Collector-Emitter Voltage

V

CEO

50

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current

I

C

150

mA

Emitter Current

I

E

-150

mA

Collector Power Dissipation

P

C

400

mW

Junction Temperature

T

j

150

ᴱ

Storage Temperature Range

T

stg

-55ᴕ150

ᴱ

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

I

CBO

V

CB

=50V, I

E

=0

-

-

0.1

ỌA

Emitter Cut-off Current

I

EBO

V

EB

=5V, I

C

=0

-

-

0.1

ỌA

DC Current Gain

h

FE

(Note)

V

CE

=6V, I

C

=2mA

70

-

700

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

=100mA, I

B

=10mA

-

0.1

0.25

V

Transition Frequency

f

T

V

CE

=10V, I

C

=1mA

80

-

-

MHz

Collector Output Capacitance

C

ob

V

CB

=10V, I

E

=0, f=1MHz

-

2.0

3.5

pF

Noise Figure

NF

V

CE

=6V, I

C

=0.1mA, f=1kHz, Rg=10kή

-

1.0

10

dB

1996. 5. 30

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KTC3199

Revision No : 1

COLLECTOR CURRENT I (mA)

0

C

0

COLLECTOR-EMITTER VOLTAGE V (V)

CE

CE

C

I - V

30

DC CURRENT GAIN h

FE

1k

300

100

0.3

0.1

COLLECTOR CURRENT I (mA)

C

h - I

0.3

COLLECTOR-EMITTER SATURATION

3

CE(sat)

0.01

300

100

30

0.1

COLLECTOR CURRENT I (mA)

C

V - I

10

BASE CURRENT I (

µ

A)

0.3

B

3k

0

BASE-EMITTER VOLTAGE V (V)

BE

I - V

40

80

120

160

100

240

1

2

3

4

5

6

7

COMMON
EMITTER
Ta=25 C

6.0

5.0

3.0

2.0

1.0

0.5

I =0.2mA

0

B

FE

C

1

3

10

30

50

100

300

500

10

CE(sat)

C

VOLTAGE V (V)

0.3

1

3

10

0.03

0.05

0.1

0.5

1

COMMON
EMITTER
I /I =10

C B

Ta=100 C

25 C

-25 C

CE

V =-10V
Ta=25 C

COMMON EMITTER

1k

500

100

50
30

-10

-3

-1

-0.3

TRANSITION FREQUENCY f (MHz)

E

T

f - I

E

EMITTER CURRENT I (mA)

-0.1

-30

-100

-300

10

T

3k

300

B

BE

0.2

0.4

0.6

0.8

1.0

1.2

1

3

30

100

300

1k

COMMON

V =-6V

CE

EMITTER

Ta=

100

C

Ta=

25

C

Ta

=-25 C

COMMON

Ta=100 C

Ta=25 C

Ta=-25 C

V =6V

CE

CE

V =1V

EMITTER

0.1

5

3

1

0.5

30

10

3

1

C

BE(sat)

V - I

C

COLLECTOR CURRENT I (mA)

0.1

0.3

100

300

10

BE(sat)

BASE-EMITTER SATURATION

0.3

VOLTAGE V (V)

B

C

I /I =10
Ta=25 C

COMMON
EMITTER

1996. 5. 30

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KTC3199

Revision No : 1

C

P (mW)

0

COLLECTOR POWER DISSIPATION

0

AMBIENT TEMPERATURE Ta ( C)

Pc - Ta

25

50

100

125

150

100

200

500

400

300

75