1996. 5. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3199
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION.
FEATURES
ᴌHigh DC Current Gain : h
FE
=70~700.
ᴌExcellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
ᴌComplementary to KTA1267.
MAXIMUM RATING (Ta=25ᴱ)
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Note : h
FE
Classification O:70ᴕ140 , Y:120ᴕ240 , GR:200ᴕ400, BL:300~700.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Emitter Current
I
E
-150
mA
Collector Power Dissipation
P
C
400
mW
Junction Temperature
T
j
150
ᴱ
Storage Temperature Range
T
stg
-55ᴕ150
ᴱ
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
ỌA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
ỌA
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
70
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1mA
80
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.0
3.5
pF
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA, f=1kHz, Rg=10kή
-
1.0
10
dB
