BC807, BC808 (Siemens)

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Semiconductor Group

1

PNP Silicon AF Transistors

BC 807

BC 808

Type

Ordering Code

Marking

Package

1)

Pin Configuration

BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40

Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692

5As
5Bs
5Cs
5Es
5Fs
5Gs

SOT-23

B

E

C

1

2

3

1)

For detailed information see chapter Package Outlines.

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BC 817, BC 818 (NPN)

5.91

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Semiconductor Group

2

BC 807

BC 808

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

V

CE0

V

Peak collector current

I

CM

A

Collector current

I

C

mA

Junction temperature

T

j

˚C

Total power dissipation,

T

C

= 79 ˚C

P

tot

mW

Storage temperature range

T

stg

Collector-base voltage

V

CB0

Thermal Resistance

Junction - ambient

1)

R

th JA

285

K/W

500

1

330

150

– 65 … + 150

Emitter-base voltage

V

EB0

Base current

I

B

mA

100

45

25

50

30

BC 807

BC 808

Peak base current

I

BM

200

5

5

Junction - soldering point

R

th JS

215

1)

Package mounted on epoxy pcb 40 mm

×

40 mm

×

1.5 mm/6 cm

2

Cu.

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Semiconductor Group

3

BC 807

BC 808

Electrical Characteristics
at

T

A

= 25 ˚C, unless otherwise specified.

DC current gain

1)

I

C

= 100 mA;

V

CE

= 1 V

BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40

I

C

= 300 mA;

V

CE

= 1 V

BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40

V

Collector-emitter breakdown voltage

I

C

= 10 mA

BC 807
BC 808

V

(BR)CE0

45
25



nA

µ

A

Collector cutoff current

V

CB

= 25 V

V

CB

= 25 V,

T

A

= 150 ˚C

I

CB0



100
50

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

I

C

= 100

µ

A

BC 807
BC 808

V

(BR)CB0

50
30



Emitter-base breakdown voltage,

I

E

= 10

µ

A

V

(BR)EB0

5

V

Collector-emitter saturation voltage

1)

I

C

= 500 mA;

I

B

= 50 mA

V

CEsat

0.7

h

FE

100
160
250

60
100
170

160
250
350



250
400
630



Base-emitter saturation voltage

1)

I

C

= 500 mA;

I

B

= 50 mA

V

BEsat

2

nA

Emitter cutoff current,

V

EB

= 4 V

I

EB0

100

MHz

Transition frequency

I

C

= 50 mA,

V

CE

= 5 V,

f

= 20 MHz

f

T

200

AC characteristics

pF

Output capacitance

V

CB

= 10 V,

f

= 1 MHz

C

obo

10

Input capacitance

V

EB

= 0.5 V,

f

= 1 MHz

C

ibo

60

1)

Pulse test:

t

300

µ

s,

D

2 %.

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Semiconductor Group

4

BC 807

BC 808

Total power dissipation

P

tot

=

f

(

T

A

*;

T

S

)

* Package mounted on epoxy

Permissible pulse load

P

tot max

/

P

tot DC

=

f

(

t

p

)

Transition frequency

f

T

=

f

(

I

C

)

V

CE

= 5 V

Collector cutoff current

I

CB0

=

f

(

T

A

)

V

CB0

= 25 V

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Semiconductor Group

5

BC 807

BC 808

Base-emitter saturation voltage

I

C

=

f

(

V

BEsat

)

h

FE

= 10

DC current gain

h

FE

=

f

(

I

C

)

V

CE

= 1 V

Collector-emitter saturation voltage

I

C

=

f

(

V

CEsat

)

h

FE

= 10


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