Rev.2.00 Aug 10, 2005 page 1 of 7

2SC535

Silicon NPN Epitaxial Planar

REJ03G0683-0200

(Previous ADE-208-1047)

Rev.2.00

Aug.10.2005

Application

VHF amplifier, mixer, local oscillator

Outline

1. Emitter
2. Collector
3. Base

RENESAS Package code: PRSS0003DA-C
(Package name: TO-92 (2))

3

2

1

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol

Ratings

Unit

Collector to base voltage

V

CBO

30 V

Collector to emitter voltage

V

CEO

20 V

Emitter to base voltage

V

EBO

4 V

Collector current

I

C

20 mA

Collector power dissipation

P

C

100 mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

2SC535

Rev.2.00 Aug 10, 2005 page 2 of 7

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test

conditions

Collector to base breakdown voltage

V

(BR)CBO

30 — — V

I

C

= 10

µ

A, I

E

= 0

Collector to emitter breakdown voltage

V

(BR)CEO

20 — — V

I

C

= 1 mA, R

BE

=

∞

Emitter to base breakdown voltage

V

(BR)EBO

4 — — V

I

E

= 10

µ

A, I

C

= 0

Collector cutoff current

I

CBO

— —

0.5

µ

A V

CB

= 10 V, I

E

= 0

DC current transfer ratio

h

FE

*

1

60 —

200

V

CE

= 6 V, I

C

= 1 mA

Base to emitter voltage

V

BE

—

0.72

— V

V

CE

= 6 V, I

C

= 1 mA

Collector to emitter saturation voltage

V

CE(sat)

— 0.17 — V

I

C

= 20 mA, I

B

=4 mA

Gain bandwidth product

f

T

450

940

—

MHz

V

CE

= 6 V, I

C

= 5 mA

Collector output capacitance

Cob

—

0.9

1.2

pF

V

CB

= 10 V, I

E

= 0, f = 1 MHz

Power gain

PG

17

20

—

dB

V

CE

= 6 V, I

C

= 1 mA,

f = 100 MHz

Noise figure

NF

—

3.5

5.5

dB

V

CE

= 6 V, I

C

= 1 mA,

f = 100 MHz, R

g

= 50

Ω

Input admittance (typ)

yie

1.3 + j5.3

mS

V

CE

= 6 V, I

C

= 1 mA,

f = 100 MHz

Reverse transfer admittance (typ)

yre

–0.078 – j0.41

mS

Forward transfer admittance (typ)

yfe

32 – j10

mS

Output admittance (typ)

yoe

0.08 + j0.82

mS

Note: 1. The 2SC535 is grouped by h

FE

as follows.

B C

60 to 120

100 to 200

2SC535

Rev.2.00 Aug 10, 2005 page 3 of 7

Main Characteristics

Maximum Collector Dissipation Curve

150

100

50

0

50

150

100

Ambient Tmperature Ta (°C)

Collector power dissipation P

C

(mW)

Typical Output Characteristics

20

16

12

8

4

0

4

16

12

I

B

= 0

P

C

= 100 m

W

25

µA

50

75

100

125

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(mA)

20

8

150

300

175

200

225

250

275

Typical Output Characteristics

50

40

30

20

10

µA

I

B

= 0

5

4

3

2

1

0

4

12

20

8

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(mA)

16

DC Current Transfer Ratio vs.

Collector Current

Collector Current I

C

(mA)

DC Current Transfer ratio h

FE

V

CE

= 6 V

120

100

80

60

40

20

0

0.1

0.5

10

5

0.2

2

20

1.0

Typical Transfer Cahracteristics (1)

Collector Current I

C

(mA)

V

CE

= 6 V

20

16

12

8

4

0

0.6

0.7

Base to Emitter Voltage V

BE

(V)

0.8

Typical Transfer Cahracteristics (2)

Collector Current I

C

(mA)

V

CE

= 6 V

5

4

3

2

1

0

0.6

0.7

Base to Emitter Voltage V

BE

(V)

0.8

2SC535

Rev.2.00 Aug 10, 2005 page 4 of 7

Collector Output Capacitance vs.

Collector to Base Voltage

Collector to Base Voltage V

CB

(V)

Collector Output Capacitance C

ob

(pF)

f = 1 MHz
I

E

= 0

1.5

1.3

1.1

0.9

0.7

0.5

0.3

10

1.0

30

3

Gain Bandwidth Product vs.

Collector Current

Collector Current I

C

(mA)

V

CE

= 6 V

1,000

800

600

400

200

0

0.1

0.5

2

10

0.2

1.0

5

20

Gain Bandwidth Product f

T

(MHz)

Noise Figure vs. Collector Current

Collector Current I

C

(mA)

Noise figure NF (dB)

I

C

= 1 mA

f = 100 MHz
R

g

= 50

Ω

8

6

4

2

0

0.2

1.0

5

0.5

2

10

Noise Figure vs. Signal Source Resistance

Signal Source Resistance R

g

(

Ω

)

Noise figure NF (dB)

V

CE

= 6 V

I

C

= 1 mA

f = 100 MHz

8

6

4

2

0

20

100

500

50

200

1,000

Noise figure NF (dB)

8

6

4

2

0

1

5

2

10

20

Noise Figure vs. Collector to

Emitter Voltage

Collecter to Emitter Voltage V

CE

(V)

V

CE

= 6 V

f = 100 MHz
R

g

= 50

Ω

100 MHz Power Gain Test Circuit

300 p

3 k

500

0.01

µ

0.1

µ

0.01

µ

10 p
max

V

EE

V

CC

0.01

µ

D.U.T.

IN

f = 100 MHz

R

g

= 100

Ω

OUT

R

l

= 550

Ω

Unit R :

Ω

C : F

2SC535

Rev.2.00 Aug 10, 2005 page 5 of 7

Input Admittance Characteristics

Input Conductance g

ie

(mS)

Input Suceptance b

ie

(mS)

y

ie

= g

ie

+ jb

ie

V

CE

= 6 V

f = 200 MHz

I

C

= 1 mA

150

150

50

70

70

100

100

200

2 mA

3 mA

5 mA

50 MHz

18

16

14

12

10

8

6

4

2

0

2

8

14

6

12

18

4

10

16

Reverse Transfer Admittance

Characteristics

f = 50 MHz

70

100

150

200

I

C

= 5 mA 3 2 1

–1.0

–0.8

–0.6

–0.4

–0.2

0

–0.04

–0.16

–0.12

–0.08

Reverse Transfer Conductance g

re

(mS)

y

re

= g

re

+ jb

re

V

CE

= 6 V

Reverse Transfer Suceptance b

re

(mS)

–0.20

Forward Transfer Admittance

Characteristics

–120

–100

–80

–60

–40

–20

I

C

= 1 mA

2 mA

3 mA

5 mA

200

150

100

70

0

20

60

40

80

120

100

Forward Transfer Conductance g

fe

(mS)

Forward Transfer Suceptance b

fe

(mS)

f = 50 MHz

y

fe

= g

fe

+ jb

fe

V

CE

= 6 V

Output Admittance Characteristics

Output Conductance g

oe

(mS)

y

oe

= g

oe

+ jb

oe

V

CE

= 6 V

I

C

= 1 mA 2

3

5

2.4

2.0

1.6

1.2

0.8

0.4

0

0.1

0.6

0.4

0.3

0.2

0.5

Output Suceptance b

oe

(mS)

150

100

70

50

f = 200 MHz

Input Admittance vs. Collector

to Emitter Voltage

Collector to Emitter Voltage V

CE

(V)

Input Admittance y

ie

(mS)

10

5

2

1.0

0.5

1

5

20

2

10

y

ie

= g

ie

+ jb

ie

I

C

= 1 mA

f = 100 MHz

b

ie

g

ie

Input Admittance vs. Collector Current

Collector Current I

C

(mA)

Input Admittance y

ie

(mS)

y

ie

= g

ie

+ jb

ie

V

CE

= 6 V

f = 100 MHz

20

10

5

2

1.0

0.5

0.2

0.1

0.5

2

10

0.2

1.0

5

b

ie

g

ie

2SC535

Rev.2.00 Aug 10, 2005 page 6 of 7

Reverse Transfer Admittance vs.

Collector to Emitter Voltage

Collector to Emitter Voltage V

CE

(V)

Reverse Transfer Suceptance b

re

(mS)

Reverse Transfer Conductance g

re

(mS)

–1.0

–0.1

–0.05

–0.02

–0.01

–0.005

–5

–0.2

–0.1

–0.05

1

5

20

2

10

y

re

= g

re

+ jb

re

I

C

= 1 mA

f = 100 MHz

b

re

g

re

y

re

= g

re

+ jb

re

V

CE

= 6 V

f = 100 MHz

Reverse Transrer Admittance vs.

Collector Current

Collector Current I

C

(mA)

Reverse Transfer Conductance g

re

(mS)

Reverse Transfer Suceptance b

re

(mS)

b

re

g

re

–1.0

–0.5

–0.2

–0.1

–0.05

–0.02

–0.01

–0.1

–0.05

–0.02

–0.01

–0.005

–0.002

–0.001

0.1

0.5

2

10

0.2

1.0

5

Forward Transfer Admittance vs.

Collector to Emitter Voltage

Collector to Emitter Voltage V

CE

(V)

Forward Transfer Admittance y

ie

(mS)

100

50

20

10

5

1

5

20

2

10

y

fe

= g

fe

+ jb

fe

I

C

= 1 mA

f = 100 MHz

–b

fe

g

fe

y

fe

= g

fe

+ jb

fe

V

CE

= 6 V

f = 100 MHz

Forward Transrer Admittance vs.

Collector Current

Collector Current I

C

(mA)

Forward Transrer Admittance y

ie

(mS)

–b

fe

g

fe

100

50

20

10

5

2

1

0.1

0.5

2

10

0.2

1.0

5

Output Admittance vs. Collector

to Emitter Voltage

Collector to Emitter Voltage V

CE

(V)

Output Suceptance b

oe

(mS)

Output Conductance g

oe

(mS)

2.0

1.0

0.5

0.2

0.1

1

5

20

0.01

0.02

0.05

0.1

0.2

2

10

y

eo

= g

oe

+ jb

oe

I

C

= 1 mA

f = 100 MHz

b

oe

g

oe

Output Admittance vs. Collector Current

Collector Current I

C

(mA)

Output Admittance y

oe

(mS)

0.1

0.5

2

10

0.2

1.0

5

2.0

1.0

0.5

0.2

0.1

0.05

0.02

y

oe

= g

oe

+ jb

oe

V

CE

= 6 V

f = 100 MHz

b

oe

g

oe

2SC535

Rev.2.00 Aug 10, 2005 page 7 of 7

Package Dimensions

0.60 Max

0.5 Max

4.8 ± 0.3

3.8 ± 0.3

5.0 ± 0.2

0.7

2.3 Max

12.7 Min

0.5 Max

1.27

2.54

Package Name

PRSS0003DA-C

TO-92(2) / TO-92(2)V

MASS[Typ.]

0.25g

SC-43A

RENESAS Code

JEITA Package Code

Unit: mm

Ordering Information

Part Name

Quantity

Shipping Container

2SC535BTZ
2SC535CTZ

2500

Hold Box, Radial Taping

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to

evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life

is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and

cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

Renesas Technology

Hong Kong Ltd.

7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071

Renesas Technology Taiwan Co.,

Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co.,

Ltd.

Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145

Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510

RENESAS SALES OFFICES

© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.

Colophon .3.0