FEATURES

Small Signal Transistors (NPN)

Dimensions in inches and (millimeters)

.016 (0.4)

.056 (

1

.43

)

.037(0.95) .037(0.95)

m

a

x

. .0

04 (

0

.1)

.122 (3.1)

.016 (0.4)

.016 (0.4)

3

1

2

Top View

.102 (2.6)

.0

07 (

0

.175)

.045 (

1

.15)

.118 (3.0)

.052 (

1

.33

)

.005 (

0

.125)

.094 (2.4)

.037 (

0

.95)

Case: SOT-23 Plastic Package
Weight: approx. 0.008 g

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C

ambient temperature unless otherwise specified

Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.

SOT-23

4/98

NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier
applications.

Especially suited for automatic insertion
in thick- and thin-film circuits.

These transistors are subdivided into three groups -16,
-25 and -40 according to their current gain.

As complementary types, the PNP transistors BC807
and BC808 are recommended.

Symbol

Value

Unit

Collector-Emitter Voltage

BC817
BC818

V

CES

V

CES

50
30

V
V

Collector-Emitter Voltage

BC817
BC818

V

CEO

V

CEO

45
25

V
V

Emitter-Base Voltage

V

EBO

5

V

Collector Current

I

C

800

mA

Peak Collector Current

I

CM

1000

mA

Peak Base Current

I

BM

200

mA

Peak Emitter Current

–I

EM

1000

mA

Power Dissipation at T

SB

= 50 °C

P

tot

310

1)

mW

Junction Temperature

T

j

150

°C

Storage Temperature Range

T

S

– 65 to +150

°C

1)

Device on fiberglass substrate, see layout

Marking code

Type

Marking

BC817-16

-25
-40

BC818-16

-25
-40

6A
6B
6C

6E
6F

6G

♦

♦

♦

BC817, BC818

♦

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C

ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain
at V

CE

= 1 V, I

C

= 100 mA

Current Gain Group-16

-25
-40

at V

CE

= 1 V, I

C

= 300 mA

-16
-25
-40

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

100
160
250
60
100
170

–
–
–
–
–
–

250
400
600
–
–
–

–
–
–
–
–
–

Thermal Resistance Junction Substrate
Backside

R

thSB

–

–

320

1)

K/W

Thermal Resistance Junction to Ambient Air

R

thJA

–

–

450

1)

K/W

Collector Saturation Voltage
at I

C

= 500 mA, I

B

= 50 mA

V

CEsat

–

–

0.7

V

Base-Emitter Voltage
at V

CE

= 1 V, I

C

= 300 mA

V

BE

–

–

1.2

V

Collector-Emitter Cutoff Current
at V

CE

= 45 V

BC817

at V

CE

= 25 V

BC818

at V

CE

= 25 V, T

j

= 150 °C

I

CES

I

CES

I

CES

–
–
–

–
–
–

100
100
5

nA
nA

µ

A

Emitter-Base Cutoff Current
at V

EB

= 4 V

I

EBO

–

–

100

nA

Gain-Bandwidth Product
at V

CE

= 5 V, I

C

= 10 mA, f = 50 MHz

f

T

–

100

–

MHz

Collector-Base Capacitance
at V

CB

= 10 V, f = 1 MHz

C

CBO

–

12

pF

1)

Device on fiberglass substrate, see layout

Layout for R

thJA

test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.08 (2)

.04 (1)

BC817 THRU BC818

Dimensions in inches (millimeters)

.47 (12)

RATINGS AND CHARACTERISTIC CURVES BC817, BC818

RATINGS AND CHARACTERISTIC CURVES BC817, BC818

RATINGS AND CHARACTERISTIC CURVES BC817, BC818