Semiconductor Group

1

NPN Silicon AF Transistors

BC 817

BC 818

Type

Ordering Code

Marking

Package

1)

Pin Configuration

BC 817-16
BC 817-25
BC 817-40
BC 818-16
BC 818-25
BC 818-40

Q62702-C1732
Q62702-C1690
Q62702-C1738
Q62702-C1739
Q62702-C1740
Q62702-C1505

6As
6Bs
6Cs
6Es
6Fs
6Gs

SOT-23

B

E

C

1

2

3

1)

For detailed information see chapter Package Outlines.

●

For general AF applications

●

High collector current

●

High current gain

●

Low collector-emitter saturation voltage

●

Complementary types: BC 807, BC 808 (PNP)

07.94

Semiconductor Group

2

BC 817

BC 818

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

V

CE0

V

Peak collector current

I

CM

A

Collector current

I

C

mA

Junction temperature

T

j

˚C

Total power dissipation,

T

C

= 79 ˚C

P

tot

mW

Storage temperature range

T

stg

Collector-base voltage

V

CB0

Thermal Resistance

Junction - ambient

1)

R

th JA

≤

285

K/W

500

1

330

150

– 65 … + 150

Emitter-base voltage

V

EB0

Base current

I

B

mA

100

45

25

50

30

BC 817

BC 818

Peak base current

I

BM

200

5

5

Junction - soldering point

R

th JS

≤

215

1)

Package mounted on epoxy pcb 40 mm

×

40 mm

×

1.5 mm/6 cm

2

Cu.

Semiconductor Group

3

BC 817

BC 818

Electrical Characteristics
at

T

A

= 25 ˚C, unless otherwise specified.

–

DC current gain

1)

I

C

= 100 mA;

V

CE

= 1 V

BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40

I

C

= 300 mA;

V

CE

= 1 V

BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40

h

FE

100
160
250

60
100
170

160
250
350

–
–
–

250
400
630

–
–
–

V

Collector-emitter breakdown voltage

I

C

= 10 mA

BC 817
BC 818

V

(BR)CE0

45
25

–
–

–
–

nA

µ

A

Collector cutoff current

V

CB

= 25 V

V

CB

= 25 V,

T

A

= 150 ˚C

I

CB0

–
–

–
–

100
50

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

I

C

= 100

µ

A

BC 817
BC 818

V

(BR)CB0

50
30

–
–

–
–

Emitter-base breakdown voltage,

I

E

= 10

µ

A

V

(BR)EB0

5

–

–

V

Collector-emitter saturation voltage

1)

I

C

= 500 mA;

I

B

= 50 mA

V

CEsat

–

–

0.7

Base-emitter saturation voltage

1)

I

C

= 500 mA;

I

B

= 50 mA

V

BEsat

–

–

2

nA

Emitter cutoff current,

V

EB

= 4 V

I

EB0

–

–

100

MHz

Transition frequency

I

C

= 50 mA,

V

CE

= 5 V,

f

= 20 MHz

f

T

–

170

–

AC characteristics

pF

Output capacitance

V

CB

= 10 V,

f

= 1 MHz

C

obo

–

6

–

Input capacitance

V

EB

= 0.5 V,

f

= 1 MHz

C

ibo

–

60

–

1)

Pulse test:

t

≤

300

µ

s,

D

≤

2 %.

Semiconductor Group

4

BC 817

BC 818

Total power dissipation

P

tot

=

f

(

T

A

*;

T

S

)

* Package mounted on epoxy

Permissible pulse load

P

tot max

/

P

tot DC

=

f

(

t

p

)

Transition frequency

f

T

=

f

(

I

C

)

V

CE

= 5 V

Collector cutoff current

I

CB0

=

f

(

T

A

)

V

CB0

= 60 V

Semiconductor Group

5

BC 817

BC 818

Base-emitter saturation voltage

I

C

=

f

(

V

BEsat

)

h

FE

= 10

DC current gain

h

FE

=

f

(

I

C

)

V

CE

= 1 V

Collector-emitter saturation voltage

I

C

=

f

(

V

CEsat

)

h

FE

= 10