2SC535
Silicon NPN Epitaxial Planar
Application
VHF amplifier, mixer, local oscillator
Outline
1. Emitter
2. Collector
3. Base
TO-92 (2)
3
2
1
2SC535
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
4
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
2SC535
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
µ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10
µ
A, I
C
= 0
Collector cutoff current
I
CBO
—
—
0.5
µ
A
V
CB
= 10 V, I
E
= 0
DC current transfer ratio
h
FE
*
1
60
—
200
V
CE
= 6 V, I
C
= 1 mA
Base to emitter voltage
V
BE
—
0.72
—
V
V
CE
= 6 V, I
C
= 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.17
—
V
I
C
= 20 mA, I
B
=4 mA
Gain bandwidth product
f
T
450
940
—
MHz
V
CE
= 6 V, I
C
= 5 mA
Collector output capacitance
Cob
—
0.9
1.2
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Power gain
PG
17
20
—
dB
V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz
Noise figure
NF
—
3.5
5.5
dB
V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz, R
g
= 50
Ω
Input admittance (typ)
yie
1.3 + j5.3
mS
V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz
Reverse transfer admittance
(typ)
yre
–0.078 – j0.41
mS
Foward transfer admittance
(typ)
yfe
32 – j10
mS
Output admittance (typ)
yoe
0.08 + j0.82
mS
Note:
1. The 2SC535 is grouped by h
FE
as follows.
B
C
60 to 120
100 to 200
2SC535
4
Maximum Collector Dissipation Curve
150
100
50
0
50
150
100
Ambient Tmperature Ta (
°
C)
Collector power dissipation P
C
(mW)
Typical Output Characteristics
20
16
12
8
4
0
4
16
12
I
B
= 0
P
C
= 100 mW
25
µ
A
50
75
100
125
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
20
8
150
300
175
200
225
250
275
Typical Output Characteristics
50
40
30
20
10
µ
A
I
B
= 0
5
4
3
2
1
0
4
12
20
8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
16
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
DC Current Transfer ratio h
FE
V
CE
= 6 V
120
100
80
60
40
20
0
0.1
0.5
10
5
0.2
2
20
1.0
2SC535
5
Typical Transfer Cahracteristics (1)
Collector Current I
C
(mA)
V
CE
= 6 V
20
16
12
8
4
0
0.6
0.7
Base to Emitter Voltage V
BE
(V)
0.8
Typical Transfer Cahracteristics (2)
Collector Current I
C
(mA)
V
CE
= 6 V
5
4
3
2
1
0
0.6
0.7
Base to Emitter Voltage V
BE
(V)
0.8
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
f = 1 MHz
I
E
= 0
1.5
1.3
1.1
0.9
0.7
0.5
0.3
10
1.0
30
3
2SC535
6
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
V
CE
= 6 V
1,000
800
600
400
200
0
0.1
0.5
2
10
0.2
1.0
5
20
Gain Bandwidth Product f
T
(MHz)
Noise Figure vs. Collector Current
Collector Current I
C
(mA)
Noise figure NF (dB)
I
C
= 1 mA
f = 100 MHz
R
g
= 50
Ω
8
6
4
2
0
0.2
1.0
5
0.5
2
10
2SC535
7
Noise Figure vs. Signal Source Resistance
Signal Source Resistance R
g
(
Ω
)
Noise figure NF (dB)
V
CE
= 6 V
I
C
= 1 mA
f = 100 MHz
8
6
4
2
0
20
100
500
50
200
1,000
Noise figure NF (dB)
8
6
4
2
0
1
5
2
10
20
Noise Figure vs. Collector to
Emitter Voltage
Collecter to Emitter Voltage V
CE
(V)
V
CE
= 6 V
f = 100 MHz
R
g
= 50
Ω
100 MHz Power Gain Test Circuit
300 p
3 k
500
0.01
µ
0.1
µ
0.01
µ
10 p
max
V
EE
V
CC
0.01
µ
D.U.T.
IN
f = 100 MHz
R
g
= 100
Ω
OUT
R
l
= 550
Ω
Unit R :
Ω
C : F
Input Admittance Characteristics
Input Conductance g
ie
(mS)
Input Suceptance b
ie
(mS)
y
ie
= g
ie
+ jb
ie
V
CE
= 6 V
f = 200 MHz
I
C
= 1 mA
150
150
50
70
70
100
100
200
2 mA
3 mA
5 mA
50 MHz
18
16
14
12
10
8
6
4
2
0
2
8
14
6
12
18
4
10
16
2SC535
8
Reverse Transfer Admittance
Characteristics
f = 50 MHz
70
100
150
200
I
C
= 5 mA 3 2 1
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.04
–0.16
–0.12
–0.08
Reverse Transfer Conductance g
re
(mS)
y
re
= g
re
+ jb
re
V
CE
= 6 V
Reverse Transfer Suceptance b
re
(mS)
–0.20
Forward Transfer Admittance
Characteristics
–120
–100
–80
–60
–40
–20
I
C
= 1 mA
2 mA
3 mA
5 mA
200
150
100
70
0
20
60
40
80
120
100
Forward Transfer Conductance g
fe
(mS)
Forward Transfer Suceptance b
fe
(mS)
f = 50 MHz
y
fe
= g
fe
+ jb
fe
V
CE
= 6 V
Output Admittance Characteristics
Output Conductance g
oe
(mS)
y
oe
= g
oe
+ jb
oe
V
CE
= 6 V
I
C
= 1 mA
2
3
5
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1
0.6
0.4
0.3
0.2
0.5
Output Suceptance b
oe
(mS)
150
100
70
50
f = 200 MHz
Input Admittance vs. Collector
to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
Input Admittance y
ie
(mS)
10
5
2
1.0
0.5
1
5
20
2
10
y
ie
= g
ie
+ jb
ie
I
C
= 1 mA
f = 100 MHz
b
ie
g
ie
2SC535
9
Input Admittance vs. Collector Current
Collector Current I
C
(mA)
Input Admittance y
ie
(mS)
y
ie
= g
ie
+ jb
ie
V
CE
= 6 V
f = 100 MHz
20
10
5
2
1.0
0.5
0.2
0.1
0.5
2
10
0.2
1.0
5
b
ie
g
ie
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
Reverse Transfer Suceptance b
re
(mS)
Reverse Transfer Conductance g
re
(mS)
–1.0
–0.1
–0.05
–0.02
–0.01
–0.005
–5
–0.2
–0.1
–0.05
1
5
20
2
10
y
re
= g
re
+ jb
re
I
C
= 1 mA
f = 100 MHz
b
re
g
re
y
re
= g
re
+ jb
re
V
CE
= 6 V
f = 100 MHz
Reverse Transrer Admittance vs.
Collector Current
Collector Current I
C
(mA)
Reverse Transfer Conductance g
re
(mS)
Reverse Transfer Suceptance b
re
(mS)
b
re
g
re
–1.0
–0.5
–0.2
–0.1
–0.05
–0.02
–0.01
–0.1
–0.05
–0.02
–0.01
–0.005
–0.002
–0.001
0.1
0.5
2
10
0.2
1.0
5
Forward Transfer Admittance vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
Forward Transfer Admittance y
ie
(mS)
100
50
20
10
5
1
5
20
2
10
y
fe
= g
fe
+ jb
fe
I
C
= 1 mA
f = 100 MHz
–b
fe
g
fe
2SC535
10
y
fe
= g
fe
+ jb
fe
V
CE
= 6 V
f = 100 MHz
Forward Transrer Admittance vs.
Collector Current
Collector Current I
C
(mA)
Forward Transrer Admittance y
ie
(mS)
–b
fe
g
fe
100
50
20
10
5
2
1
0.1
0.5
2
10
0.2
1.0
5
Output Admittance vs. Collector
to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
Output Suceptance b
oe
(mS)
Output Conductance g
oe
(mS)
2.0
1.0
0.5
0.2
0.1
1
5
20
0.01
0.02
0.05
0.1
0.2
2
10
y
eo
= g
oe
+ jb
oe
I
C
= 1 mA
f = 100 MHz
b
oe
g
oe
Output Admittance vs. Collector Current
Collector Current I
C
(mA)
Output Admittance y
oe
(mS)
0.1
0.5
2
10
0.2
1.0
5
2.0
1.0
0.5
0.2
0.1
0.05
0.02
y
oe
= g
oe
+ jb
oe
V
CE
= 6 V
f = 100 MHz
b
oe
g
oe
0.60 Max
0.45
±
0.1
4.8
±
0.3
3.8
±
0.3
5.0
±
0.2
0.7
2.3 Max
12.7 Min
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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