©2000 Fairchild Semiconductor International

Rev. A, February 2000

BC327/

328

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25

°

C unless otherwise noted

Electrical Characteristics

T

a

=25

°

C unless otherwise noted

h

FE

Classification

Symbol

Parameter

Value

Units

V

CES

Collector-Emitter Voltage

: BC327
: BC328

-50
-30

V
V

V

CEO

Collector-Emitter Voltage

: BC327
: BC328

-45
-25

V
V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current (DC)

-800

mA

P

C

Collector Dissipation

625

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BV

CEO

Collector-Emitter Breakdown Voltage

: BC327
: BC328

I

C

= -10mA, I

B

=0

-45
-25

V
V

BV

CES

Collector-Emitter Breakdown Voltage

: BC327
: BC328

I

C

= -0.1mA, V

BE

=0

-50
-30

V
V

BV

EBO

Emitter-Base Breakdown Voltage

IE= -10

µ

A, I

C

=0

-5

V

I

CES

Collector Cut-off Current

: BC307
: BC338

V

CE

= -45V, V

BE

=0

V

CE

= -25V, V

BE

=0

-2
-2

-100
-100

nA
nA

h

FE1

h

FE2

DC Current Gain

V

CE

= -1V, I

C

= -100mA

V

CE

= -1V, I

C

= -300mA

100

40

630

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

= -500mA, I

B

= -50mA

-0.7

V

V

BE

(on)

Base-Emitter On Voltage

V

CE

= -1V, I

C

= -300mA

-1.2

V

f

T

Current Gain Bandwidth Product

V

CE

= -5V, I

C

= -10mA, f=20MHz

100

MHz

C

ob

Output Capacitance

V

CB

= -10V, I

E

=0, f=1MHz

12

pF

Classification

16

25

40

h

FE1

100 ~ 250

160 ~ 400

250 ~ 630

h

FE2

60-

100-

170-

BC327/328

Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338

1. Collector 2. Base 3. Emitter

TO-92

1

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BC327/

328

Typical Characteristics

Figure 1. Static Characteristic

Figure 2. Static Characteristic

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage

Figure 6. Gain Bandwidth Product

-1

-2

-3

-4

-5

-0

-100

-200

-300

-400

-500

P

T

= 600m

W

I

B

= - 3.

0m

A

I

B

= - 2.

0m

A

I

B

= - 3.

5m

A

I

B

= - 1.0mA

I

B

= - 1.

5mA

I

B

= - 0.5mA

I

B

= - 4.

0m

A

I

B

= - 2.

5m

A

I

B

= - 4.

5m

A

I

B

= - 5.

0m

A

I

B

= 0

I

C

[m

A], CO

L

L

ECT

O

R CU

RRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-10

-20

-30

-40

-50

-4

-8

-12

-16

-20

P

T

= 6

00m

W

I

B

= -

80

μA

I

B

= -

70

μA

I

B

= -

60

μA

I

B

= -

50

μA

I

B

= -

40

μA

I

B

= - 3

0μA

I

B

= - 20

μA

I

B

= - 10μA

I

B

= 0

I

C

[m

A

], CO

L

L

ECT

O

R CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0.1

-1

-10

-100

-1000

1

10

100

1000

PULSE

- 1.0V

V

CE

= - 2.0V

h

FE

, DC C

URRE

NT

G

A

IN

I

C

[mA], COLLECTOR CURRENT

-0.1

-1

-10

-100

-1000

-0.01

-0.1

-1

-10

I

C

= 10 I

B

PULSE

V

CE

(sat)

V

BE

(sat)

V

BE

(s

a

t),

V

CE

(s

at)

[V

], S

A

T

URA

T

ION

V

O

LT

A

G

E

I

C

[mA], COLLECTOR CURRENT

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-0.1

-1

-10

-100

-1000

V

CE

= -1V

PULSE

I

C

[m

A

], CO

LL

E

C

T

O

R CUR

RE

NT

V

BE

[V], BASE-EMITTER VOLTAGE

-1

-10

-100

10

100

1000

V

CE

= -5.0V

f

T

[M

H

z

], G

A

IN-

BANDW

IDT

H

PRO

D

UCT

I

C

[mA], COLLECTOR CURRENT

©2000 Fairchild Semiconductor International

BC327/

328

Rev. A, February 2000

Typical Characteristics

(Continued)

Figure 7. Input and Output Capacitance

vs. Reverse Voltage

Figure 8. Safe Operating Area

Figure 9. Power Derating

0.1

1

10

100

1

10

100

C

ob

C

ib

f = 1MHz

C

ib

, C

ob

[pF

], CA

P

A

C

IT

A

N

CE

V

BE

[V], COLLECTOR-BASE VOLTAGE

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-1

-10

-100

-1

-10

-100

-1000

BC
328

BC
327

pw

= 10m

s

I

CP

SINGLE PULSE
T

C

=25℃

duty cycle<2%

200m

s

DC

I

C

[m

A

],

CO

L

L

E

C

T

O

R

CU

RRE

NT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

0.0

0.2

0.4

0.6

0.8

P

C

[W

], P

O

W

E

R

D

IS

S

IP

A

T

IO

N

T

C

[

O

C], CASE TEMPERATURE

0.46

±

0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±

0.20

]

1.27TYP

[1.27

±

0.20

]

3.60

±

0.20

14.47

±

0.40

1.02

±

0.10

(0.25)

4.58

±

0.20

4.58

+0.25
–0.15

0.38

+0.10
–0.05

0.38

+0.10

–0.05

TO-92

Package Demensions

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BC327/

328

Dimensions in Millimeters

©2000 Fairchild Semiconductor International

Rev. E

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E

2

CMOS™

FACT™
FACT Quiet Series™
FAST

®

FASTr™
GTO™

HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench

®

QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6

SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.