March 2005 QRD1113/1114 Reflective Object Sensor Features Description % Phototransistor Output The QRD1113/14 reflective sensor consists of an infrared emit- PACKAGE DIMENSIONS ting diode and an NPN silicon photodarlington mounted side by % No contact surface sensing side in a black plastic housing. The on-axis radiation of the emit- % Unfocused for sensing diffused surfaces ter and the on-axis response of the detector are both perpendic- % Compact Package ular to the face of the QRD1113/14. The photodarlington % Daylight filter on sensor responds to radiation emitted from the diode only when a reflec- tive object or surface is in the field of view of the detector. Package Dimensions 0.083 (2.11) PIN 1 INDICATOR OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) 0.173 (4.39) 0.183 (4.65) 0.500 (12.7) MIN 0.020 (0.51) SQ. (4X) 2 3 0.100 (2.54) Schematic 1 4 23 0.083 (2.11) PIN 1 COLLECTOR PIN 3 ANODE PIN 2 EMITTER PIN 4 CATHODE NOTES: 1. Dimensions for all drawings are in inches (millimeters). 14 2. Tolerance of ą .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com QRD1113/1114 Rev. 1.0.0 QRD1113/1114 Reflective Object Sensor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Parameter Symbol Rating Units Operating Temperature TOPR -40 to +85 C Storage Temperature TSTG -40 to +100 C Lead Temperature (Solder Iron)(2,3) TSOL-I 240 for 5 sec C Lead Temperature (Solder Flow)(2,3) TSOL-F 260 for 10 sec C Emitter Continuous Forward Current IF 50 mA Reverse Voltage VR 5V Power Dissipation(1) PD 100 mW Sensor Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO V Power Dissipation(1) PD 100 mW Electrical / Optical Characteristics (TA = 25C) Parameter Test Conditions Symbol Min Typ Max Units Input (Emitter) Forward Voltage IF = 20 mA VF 1.7 V Reverse Leakage Current VR = 5 V IR 100 A Peak Emission Wavelength IF = 20 mA PE 940 nm Output (Sensor) Collector-Emitter Breakdown IC = 1 mA BVCEO 30 V Emitter-Collector Breakdown IE = 0.1 mA BVECO 5 V Dark Current VCE = 10 V, IF = 0 mA ID 100 nA Coupled QRD1113 Collector Current IF = 20 mA, VCE = 5 V, D = .050"(6, 8) IC(ON) 0.300 mA QRD1114 Collector Current IF = 20 mA, VCE = 5 V, D = .050"(6, 8) IC(ON) 1 mA Collector Emitter Saturation IF = 40 mA, IC = 100 A, D = .050"(6, 8) VCE(SAT) 0.4 V Voltage Cross Talk IF = 20 mA, VCE = 5 V, EE = 0(7) ICX .200 10 A Rise Time VCE = 5V, RL = 100 &!, IC(ON) = 5 mA tr 10 s Fall Time tf 50 s NOTES: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16 (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. D is the distance from the sensor face to the reflective surface. 7. Crosstalk (ICK) is the collector current measured with the indicated current on the input diode and with no reflective surface. 8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface. 2 www.fairchildsemi.com QRD1113/1114 Rev. 1.0.0 QRD1113/1114 Reflective Object Sensor Typical Performance Curves Fig. 1 Forward Voltage vs. Fig. 2 Normalized Collector Current vs. Fig. 3 Normalized Collector Current vs. Forward Current Forward Current Temperature 1.60 10.0 1.0 1.40 0.8 1.00 1.20 0.6 1.00 0.10 0.20 0.4 0.60 0.01 IF = 10 mA 0.2 VCE = 5 V VCE = 5 V 0.40 D = .05" 0 .001 0.20 -50 -25 0 25 50 75 0.1 1.0 10 100 0 10 20 30 40 50 IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (C) Fig. 4 Normalized Collector Dark Current vs. Temperature 102 Fig. 5 Normalized Collector Current vs. Distance VCE = 10 V 1.0 101 .9 IF = 20 mA .8 10 VCE = 5 V .7 .6 1.0 .5 .4 10-1 .3 .2 10-2 .1 0 0 50 100 150 200 250 300 350 400 450 500 10-3 REFLECTIVE SURFACE DISTANCE (mils) -50 -25 0 25 50 75 100 TA - AMBIENT TEMPERATURE (C) 3 www.fairchildsemi.com QRD1113/1114 Rev. 1.0.0 QRD1113/1114 Reflective Object Sensor F V - FORWARD VOLTAGE (mA) C C I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) D I - COLLECTOR DARK CURRENT NORMALIZED - COLLECTOR CURRENT (mA) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 www.fairchildsemi.com QRD1113/1114 Rev. 1.0.0 QRD1113/1114 Reflective Object Sensor