BUT11F/11AF
High Voltage Power Switching Applications
TO-220F
1
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BUT11F 850 V
: BUT11AF 1000 V
VCEO Collector-Emitter Voltage
: BUT11F 400 V
: BUT11AF 450 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 5 A
ICP *Collector Current (Pulse) 10 A
IB Base Current (DC) 2 A
IBP *Base Current (Pulse) 4 A
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BUT11F IC = 100mA, IB = 0 400 V
: BUT11AF 450 V
ICES Collector Cut-off Current
: BUT11F VCE = 850V, VBE = 0 1 mA
: BUT11AF VCE = 1000V, VBE = 0 1 mA
IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA
VCE(sat) Collector-Emitter Saturation Voltage
: BUT11F IC = 3A, IB = 0.6A 1.5 V
: BUT11AF IC = 2.5A, IB = 0.5A 1.5 V
VBE(sat) Base-Emitter Saturation Voltage
: BUT11F IC = 3A, IB = 0.6A 1.3 V
: BUT11AF IC = 2.5A, IB = 0.5A 1.3 V
tON Turn On Time VCC = 250V, IC = 2.5A 1 µs
IB1 = -IB2 = 0.5A
tSTG Storage Time 4 µs
RL = 100&!
tF Fall Time 0.8 µs
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Thermal Characteristics TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R¸jC Thermal Resistance, Junction to Case 3.125 °C/W
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
BUT11F/11AF
Typical Characteristics
1000
10
VCE = 5V
IC = 5 IB
100 1
0.1
10
VCE(sat)
0.01
0.01 0.1 1 10
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
10 10
IC = 5 IB
8
VBE(sat)
1
6
4
0.1
2
BUT11F BUT11AF
0.01
0
0.01 0.1 1 10
0 200 400 600 800 1000 1200
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Biased Safe Operating Area
80
10
70
Ic MAX (Continuous)
60
1
50
40
30
0.1
20
BUT11AF
10
BUT11F
0
0.01
0 25 50 75 100 125 150 175
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[OC], CASE TEMPERATURE
Figure 6. Power Derating
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
BUT11F/11AF
FE
h
, DC CURRENT GAIN
CE
V
(sat)[V], SATURATION VOLTAGE
C
I [A], COLLECTOR CURRENT
BE
V
(sat)[V], SATURATION VOLTAGE
C
P [W], POWER DISSIPATION
C
I [A], COLLECTOR CURRENT
DC
Package Demensions
TO-220F
2.54 Ä…0.20
10.16 Ä…0.20 Å‚3.18 Ä…0.10
(7.00) (0.70)
(1.00x45°)
MAX1.47
0.80 Ä…0.10
#1
0.35 Ä…0.10
+0.10
0.50
 0.05 2.76 Ä…0.20
2.54TYP 2.54TYP
[2.54 Ä…0.20] [2.54 Ä…0.20]
9.40 Ä…0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
BUT11F/11AF
3.30
Ä…
0.10
6.68
Ä…
0.20
15.87
Ä…
0.20
15.80
Ä…
0.20
9.75
Ä…
0.30
4.70
Ä…
0.20
(30
°
)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx"! FAST® OPTOPLANAR"! STAR*POWER"!
Bottomless"! FASTr"! PACMAN"! Stealth"!
CoolFET"! FRFET"! POP"! SuperSOT"!-3
CROSSVOLT"! GlobalOptoisolator"! Power247"! SuperSOT"!-6
DenseTrench"! GTO"! PowerTrench® SuperSOT"!-8
HiSeC"! QFET"! SyncFET"!
DOME"!
EcoSPARK"! ISOPLANAR"! QS"! TruTranslation"!
E2CMOS"! LittleFET"! QT Optoelectronics"! TinyLogic"!
EnSigna"! MicroFET"! Quiet Series"! UHC"!
FACT"! MICROWIRE"! SLIENT SWITCHER® UltraFET®
FACT Quiet Series"! OPTOLOGIC"! SMART START"! VCX"!
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation Rev. H3