utanium carbonitride, aluminium oxlde, titanlum carbonitride and tltanlum nltrlde. Etched microsectlon x 1000.
ica nr 2 / labie No. 2
Gatunek podkładu |
Węgliki pokrywane | |||
Substrate grade |
Coated Carbide | |||
Metoda |
Grubość | |||
Oznaczenie |
Oznaczenie |
pokrycia |
Budowa warstwy |
pokrycia ca pm |
Designation |
Designation |
Type of |
Layer composition(s) |
Coating thickness |
coating |
(iim approx | |||
NT15 |
CVD |
TiC + AI2O3 + TiN |
8 | |
NT20 |
CVD |
TiC + Ti(C.N) + Al203 + Ti(C,N) + TiN |
10 | |
NT25 |
CVD |
TiC + TiN |
8 | |
NT30 |
CVD |
TiC + Al203 + TiN |
10 8 10 8 5 5 6 | |
Specjalny Special |
NT35 NTH1 NTH2 N2^ N25M TC35 |
CVD CVD CVD CVD CVD CVD |
TiC + TiN TiC+Ti(C,N) + Al203 + TiN TiC + TiN TiC+Ti(C,N) + TiN TiC+Ti(C,N) 1 TiN TiC | |