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Experiment, DAC    Simulation

UeN. IICIJA. higl- preis .'5    C£\. jrain ^J łSUA n liierete'

Simulation vs. Experiment

• Simulations of X-Ray

diffraction patterns conceming mentioned model were madę for GaN grain of 160A in diameter. 0, 0.2, 0.4, 0.8, and 1.2 shiffcs per layer were applied. Remarkabły similar patterns were obtained, eomparing to experimental high-pressnre measurements of nano-GaN.