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ÿþBD244/A/B/C Medium Power Linear and Switching Applications " Complement to BD243, BD243A, BD243B and BD243C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD244 - 45 V : BD244A - 60 V : BD244B - 80 V : BD244C - 100 V VCEO Collector-Emitter Voltage : BD244 - 45 V : BD244A - 60 V : BD244B - 80 V : BD244C - 100 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 6 A ICP *Collector Current (Pulse) - 10 A IB Base Current - 2 A PC Collector Dissipation (TC=25°C) 65 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD244 IC = - 30mA, IB = 0 - 45 V : BD244A - 60 V : BD244B - 80 V : BD244C - 100 V ICEO Collector Cut-off Current : BD244/244A VCE = - 30V, IB = 0 - 0.7 mA : BD244B/244C VCE = - 60V, IB = 0 - 0.7 mA ICES Collector Cut-off Current : BD244 VCE = - 45V, VBE = 0 - 0.4 mA : BD244A VCE = - 60V, VBE = 0 - 0.4 mA : BD244B VCE = - 80V, VBE = 0 - 0.4 mA : BD244C VCE = - 100V, VBE = 0 - 0.4 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 1 mA hFE * DC Current Gain VCE = - 4V, IC = - 0.3A 30 VCE = - 4V, IC = - 3A 15 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 6A, IB = - 1A - 1.5 V VBE(on) * Base-Emitter ON Voltage VCE = - 4V, IC = - 6A - 2 V * Pulse Test: PW =300µs, duty Cycle =2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD244/A/B/C Typical Characteristics 1000 -1.8 -1.7 IC = 10.1 IB VCE = 2V -1.6 -1.5 -1.4 -1.3 -1.2 100 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 10 -0.5 -0.01 -0.1 -1 -10 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage -1 -100 IC = 10.1 IB -10 IC(max) 10µs 100µs -0.1 -1 BD244 BD244A BD244B BD244C -0.1 -0.01 -1 -10 -100 -1000 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 T[oC], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD244/A/B/C FE h , DC CURRENT GAIN BE V (sat)(V), SATURATION VOLTAGE C I [A], COLLECTOR CURRENT CE V (sat)(V), SATURATION VOLTAGE C P [W], POWER DISSIPATION 10 1 m m s s DC Package Demensions TO-220 9.90 ±0.20 4.50 ±0.20 (8.70) +0.10 1.30 ø3.60 ±0.10  0.05 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 +0.10 0.50 2.40 ±0.20  0.05 2.54TYP 2.54TYP [2.54 ±0.20] [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD244/A/B/C (1.70) 1.30 ± 0.10 2.80 ± 0.10 18.95MAX. 15.90 ± 0.20 9.20 ± 0.20 (1.46) (3.00) (3.70) (1.00) 13.08 ± 0.20 10.08 ± 0.30 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx"! HiSeC"! SuperSOT"!-8 Bottomless"! ISOPLANAR"! SyncFET"! CoolFET"! MICROWIRE"! TinyLogic"! CROSSVOLT"! POP"! UHC"! E2CMOS"! PowerTrench® VCX"! FACT"! QFET"! FACT Quiet Series"! QS"! FAST® Quiet Series"! FASTr"! SuperSOT"!-3 GTO"! SuperSOT"!-6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E

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