(IC = 2.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292 30 150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î (IC = 2.5 Adc, VCE = 4.0 Vdc) 2N6109 30 150 Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288 Î Î Î Î 30 150 (IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices 2.3 Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Collector Emitter Saturation Voltage VCE(sat) ÎÎÎ 3.5 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ (IC = 7.0 Adc, IB = 3.0 Adc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ Base Emitter On Voltage VBE(on) 3.0 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î (IC = 7.0 Adc, VCE = 4.0 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current Gain Bandwidth Product (2) fT ÎÎÎ ÎÎÎ MHz (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 92 4.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î 2N6107, 09, 11 10 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob 250 pF ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ Small Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe 20 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. (2) fT = |hfe| " ftest. http://onsemi.com 3 2N6107 2N6109 2N6111 2N6288 2N6292 VCC 2.0 + 30 V 1.0 TJ = 25°C 25 µs RC VCC = 30 V 0.7 IC/IB = 10 +11 V SCOPE 0.5 RB 0.3 0 0.2 tr D1 51 - 9.0 V 0.1 - 4 V tr, tf d" 10 ns 0.07 td @ VBE(off) H" 5.0 V DUTY CYCLE = 1.0% 0.05 RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 D1 MUST BE FAST RECOVERY TYPE, eg: 0.02 1N5825 USED ABOVE IB H" 100 mA 0.07 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 MSD6100 USED BELOW IB H" 100 mA IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Time Test Circuit Figure 3. Turn On Time 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 P(pk) Z¸JC(t) = r(t) R¸JC 0.07 0.05 R¸JC = 3.125°C/W MAX 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN t1 0.03 READ TIME AT t1 t2 0.02 0.01 TJ(pk) - TC = P(pk) Z¸JC(t) DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 4. Thermal Response 15 There are two limitations on the power handling ability of 0.1 ms 10 a transistor: average junction temperature and second 0.5 ms 7.0 breakdown. Safe operating area curves indicate IC VCE 5.0 limits of the transistor that must be observed for reliable dc operation; i.e., the transistor must not be subjected to greater 3.0 0.1 2.0 dissipation than the curves indicate. ms The data of Figure 5 is based on TJ(pk) = 150_C; TC is CURRENT LIMIT 1.0 variable depending on conditions. Second breakdown pulse SECONDARY 0.7 limits are valid for duty cycles to 10% provided TJ(pk) BREAKDOWN LIMIT 0.5 5.0 ms v 150_C. TJ(pk) may be calculated from the data in THERMAL LIMIT 0.3 Figure 4. At high case temperatures, thermal limitations will @ TC = 25°C (SINGLE PULSE) 0.2 reduce the power that can be handled to values less than the 0.15 limitations imposed by second breakdown. 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area http://onsemi.com 4 µ t, TIME ( s) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) C I , COLLECTOR CURRENT (AMPS) 2N6107 2N6109 2N6111 2N6288 2N6292 5.0 300 3.0 TJ = 25°C 200 TJ = 25°C 2.0 VCC = 30 V IC/IB = 10 ts IB1 = IB2 1.0 Cib 0.7 0.5 100 tr 0.3 70 Cob 0.2 50 0.1 0.07 0.05 30 0.07 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn Off Time Figure 7. Capacitance http://onsemi.com 5 µ t, TIME ( s) C, CAPACITANCE (pF) 2N6107 2N6109 2N6111 2N6288 2N6292 PACKAGE DIMENSIONS TO 220AB CASE 221A 09 ISSUE AA NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI T PLANE Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. B F C 3. DIMENSION Z DEFINES A ZONE WHERE ALL T S BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX A Q A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 1 2 3 U C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 H F 0.142 0.147 3.61 3.73 K G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 Z J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 L R N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 V J R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 G T 0.235 0.255 5.97 6.47 D STYLE 1: U 0.000 0.050 0.00 1.27 PIN 1. BASE V 0.045 --- 1.15 --- N 2. COLLECTOR Z --- 0.080 --- 2.04 3. EMITTER 4. COLLECTOR http://onsemi.com 6 2N6107 2N6109 2N6111 2N6288 2N6292 Notes http://onsemi.com 7 2N6107 2N6109 2N6111 2N6288 2N6292 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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