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148

Novel Semiconductor Devices

(Continued from page 52)

gauss and a control current of H am-pere are obtainable with these devices. Fig. 8 shows the characteristics of a typical device. Output impedances can be adjusted from 0.01 to 20 ohms and their maximum frequency response ranges from 10 to 100 megacycles.

A study was madę recently at Bell Telephone Laboratories of the many possible applications of the Hall Effect. This study revealed that of the many possible uses two of the most interest-ing are the gyrator and the circulator. These devices are sketched in Figs. 9A and 9B.

The gyrator has probably received morę attention than any other Hall Effect device. By employing the gyrator in suitable circuitry, an isolator can be constructed in which signals can bc transmitted in one direction but not in the other. A germanium isolator has been built with a forward loss of 14 db and a reverse loss of 75 db. Thus, the gyrator could be used to isolate an an-tenna from a load, for example.

Fig. 9B shows what is known as a three-port circulator. In this device, signals can pass from terminals 1-1' to 2-2'. 2-2' to 3-3'. and 3-3' to 1-1', but not in the other direction, such as 2-2' to 1-1'. The circulator can be constructed from a slab of semiconductor materiał with six cąually-spaced edge contacts. Forward loss in a device of this kind is about 17 db, and reverse loss in a typical w-type germanium slab may bc as high as 64 db. A relatively high mag-nctic field is required with germanium. but a device of this kind mado of indium antimonidc could operatc satis-factorily with a relatively Iow field of about 1000 gauss.

Because of the relatively high forward loss. Hall Effect devices of this kind must normally cmploy a negative rcsistancc amplifier for maximum use-fulness. Howover, they have the big advantage of theoretically being able to transmit d.c. signals as woli as a.c. signals at frequencies approaching the dielectric relaxation frequency of the semiconductor materiał.

Other Hall Effect devices which have bcen explored. either experimentally or theoretically. include a negative rcsistancc amplifier. mechanical transducer, clectrical compass, modulator, and demodulator. These doviccs do not involve p-n junctions and so the surfaces do not need elaborate protection.

Magnetoresistance

As mentioned before. when a slice of current-carrying semiconductor materia! is placed in a magnetic field, the charge carriers are pushed over to the sides of the slice in a direction per-pendicular to the current flow. This has the effect of inereasing the rcsistancc of the slice. Herc, then, we have a device whose rcsistancc can be al-tered by changing the strength of the magnetic field in which it is placed.

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