TM
QFET
FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect " 4.5A, 600V, RDS(on) = 2.5&! @VGS = 10 V
transistors are produced using Fairchild s proprietary, " Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
" Low Crss ( typical 6.5 pF)
This advanced technology has been especially tailored to
" Fast switching
minimize on-state resistance, provide superior switching
" 100% avalanche tested
performance, and withstand high energy pulse in the
" Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
D








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G








TO-220 TO-220F
G D
S
G D S
FQP Series FQPF Series
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter FQP5N60C FQPF5N60C Units
VDSS
Drain-Source Voltage 600 V
ID
Drain Current - Continuous (TC = 25°C)
4.5 4.5 * A
- Continuous (TC = 100°C)
2.6 2.6 * A
IDM (Note 1) 18 18 * A
Drain Current - Pulsed
VGSS
Gate-Source Voltage Ä… 30 V
EAS (Note 2) 210 mJ
Single Pulsed Avalanche Energy
IAR (Note 1) 4.5 A
Avalanche Current
EAR (Note 1) 10 mJ
Repetitive Avalanche Energy
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
100 33 W
- Derate above 25°C 0.8 0.26 W/°C
TJ, TSTG
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL
300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FQP5N60C FQPF5N60C Units
R¸JC
Thermal Resistance, Junction-to-Case 1.25 3.79 °C/W
R¸CS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
R¸JA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS VGS = 0 V, ID = 250 µA
Drain-Source Breakdown Voltage 600 -- -- V
"BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C
/ "TJ Coefficient
IDSS VDS = 600 V, VGS = 0 V
-- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C
-- -- 10 µA
IGSSF VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Forward -- -- 100 nA
IGSSR VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse -- -- -100 nA
On Characteristics
VGS(th) VDS = VGS, ID = 250 µA
Gate Threshold Voltage 2.0 -- 4.0 V
RDS(on)
Static Drain-Source
VGS = 10 V, ID = 2.25 A
-- 2.0 2.5 &!
On-Resistance
gFS VDS = 40 V, ID = 2.25 A (Note 4) -- 4.7 -- S
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance -- 515 670 pF
VDS = 25 V, VGS = 0 V,
Coss
Output Capacitance -- 55 72 pF
f = 1.0 MHz
Crss
Reverse Transfer Capacitance -- 6.5 8.5 pF
Switching Characteristics
td(on)
Turn-On Delay Time -- 10 30 ns
VDD = 300 V, ID = 4.5A,
tr
Turn-On Rise Time -- 42 90 ns
RG = 25 &!
td(off)
Turn-Off Delay Time -- 38 85 ns
(Note 4, 5)
tf
Turn-Off Fall Time -- 46 100 ns
Qg
Total Gate Charge -- 15 19 nC
VDS = 480 V, ID = 4.5A,
Qgs
Gate-Source Charge -- 2.5 -- nC
VGS = 10 V
(Note 4, 5)
Qgd
Gate-Drain Charge -- 6.6 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A
ISM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A
VSD VGS = 0 V, IS = 4.5 A
Drain-Source Diode Forward Voltage -- -- 1.4 V
trr Reverse Recovery Time
VGS = 0 V, IS = 4.5 A, -- 300 -- ns
Qrr dIF / dt = 100 A/µs (Note 4) -- 2.2 -- µC
Reverse Recovery Charge
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 &!, Starting TJ = 25°C
3. ISD d" 4.5A, di/dt d" 200A/µs, VDD d" BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width d" 300µs, Duty cycle d" 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
Typical Characteristics
VGS
101 Top : 15.0 V
10.0 V
8.0 V
7.0 V 101
6.5 V
6.0 V
5.5 V 150oC
100 5.0 V
-55oC
Bottom : 4.5 V
25oC
100
10-1
; Notes :
; Notes :
1. 250ź s Pulse Test
1. VDS = 40V
2. TC = 25!
2. 250ź s Pulse Test
10-1
10-2
2 4 6 8 10
10-1 100 101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
6
101
5
VGS = 10V
4
3
100
2
150!
VGS = 20V
; Notes :
1
25! 1. VGS = 0V
ź
2. 250 s Pulse Test
; Note : TJ = 25!
0
10-1
0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation with Source Current
and Temperature
1000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10 VDS = 120V
800
VDS = 300V
Ciss
8
VDS = 480V
600
Coss 6
400
; Notes ; 4
1. VGS = 0 V
2. f = 1 MHz
Crss
200
2
; Note : ID = 4.5A
0
0
0 4 8 12 16
10-1 100 101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
D
I , Drain Current [A]
D
I , Dr ai n Cur r ent [ A]
DS ( O N )
R
[
©
],
Drain-Source On-Resistance
DR
I
, Re v e r s e Dr a i n Cu r r e n t [ A ]
Capacit ance [pF]
GS
V
, Gate-Source Voltage [V]
Typical Characteristics (Continued)
1.2 3.0
2.5
1.1
2.0
1.0 1.5
1.0
; Notes :
0.9
1. VGS = 0 V ;
Notes :
0.5
2. ID = 250 ź A
1. VGS = 10 V
2. ID = 2.25 A
0.0
0.8
-100 -50 0 50 100 150 200
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [oC]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs Temperature vs Temperature
Operation in This Area
Operation in This Area
is Limited by R DS(on)
is Limited by R DS(on) 10 µs
1
100 µs
10
1
10
100 µs
1 ms
1 ms
10 ms
100 ms
10 ms
DC
100
0 100 ms
10
DC
10-1
; Notes :
10-1
; Notes :
o
1. TC = 25 C
o
1. TC = 25 C
2. TJ = 150 oC
2. TJ = 150 oC
3. Single Pulse
3. Single Pulse
-2
10
0 1 2 3
10 10 10 10 10-2
100 101 102 103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP5N60C for FQPF5N60C
5
4
3
2
1
0
25 50 75 100 125 150
!
TC, Case Temperature [ ]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
DS S
DS ( ON)
R
, (Normali zed)
BV
, ( Nor mal i zed)
Drain- Source On-Resi st ance
Dr a i n- Sou r c e Br e ak d own Vo l t ag e
D
I , Dr a i n Cu r r e n t [ A ]
D
I , Dr ai n Cur r ent [ A]
D
I , Dr ai n Cur r ent [ A]
Typical Characteristics (Continued)
100
D=0 .5
0.2
; N o te s :
0.1
!
1 . Z (t ) = 1. 2 5 /W M a x .
¸ JC
10-1
0.05 2 . D u ty F a c to r , D = t /t
1 2
3 . T - T = P * Z (t )
JM C DM ¸ JC
0.02
0.01
PDM
single pulse
t1
10-2
t2
-5 -4 -3 -2 -1 0
10 10 10 10 10 10 101
t , Squar e W ave Pulse Dur ation [sec]
1
Figure 11-1. Transient Thermal Response Curve for FQP5N60C
D= 0 .5
100
0.2
0.1
; Notes :
0.05
1 . Z (t) = 3.79 ! /W M a x .
¸ JC
2 . D u ty F a c to r, D = t1 /t2
0.02
10-1
3 . T - T = P * Z (t)
JM C DM ¸ JC
0.01
PDM
single pulse
t1
t2
10-2
-5 -4 -3 -2 -1 0
10 10 10 10 10 10 101
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF5N60C
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
)
¸
JC
Z
(t , ThermalResponse
)
m
¸
JC
Z
(t , Ther
alResponse
 Gate Charge Test Circuit & Waveform
VGS
VGS
Same Type
Same Type
50K©
50K©
as DUT
as DUT
Qg
Qg
12V 200nF
12V 200nF
10V
10V
300nF
300nF
VDS
VDS
VGS
VGS
Qgs Qgd
Qgs Qgd
DUT
DUT
3mA
3mA
Charge
Charge
Resistive Switching Test Circuit & Waveforms
RL
RL
VDS 90%
VDS 90%
VDS
VDS
VDD
VDD
VGS
VGS
RG
RG
10%
10%
VGS
VGS
DUT
DUT
10V
10V
td(on) tr td(off)
td(on) tr td(off)
tf
tf
t t
t t
on off
on off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
BVDSS
L
L
L
1
1
1
1
----
EAS = ---- L IAS2
EAS = ---- L IAS2 --------------------
EAS = ---- L IAS2 --------------------
VDS
VDS
2
2
2
2
BVDSS - VDD
BVDSS - VDD
BVDSS
BVDSS
I
I
I
D
D
D
IAS
IAS
RG
RG
VDD
VDD
ID (t)
ID (t)
VDD VDS (t)
VDD VDS (t)
10V DUT
10V DUT
t p
t
p
t p
t
Time
Time
p
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
 Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
+
DUT
DUT
VDS
VDS
_
_
I
I
SD
SD
L
L
L
Driver
Driver
RG
RG
Same Type
Same Type
as DUT VDD
as DUT VDD
VGS
VGS
" dv/dt controlled by RG
" dv/dt controlled by RG
" ISD controlled by pulse period
" ISD controlled by pulse period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
VGS
VGS
D = --------------------------
D = --------------------------
D = --------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
10V
10V
( Driver )
( Driver )
IFM , Body Diode Forward Current
IFM , Body Diode Forward Current
I
I
SD
SD
di/dt
di/dt
( DUT )
( DUT )
IRM
IRM
Body Diode Reverse Current
Body Diode Reverse Current
VDS
VDS
( DUT )
( DUT )
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
VDD
VDD
VSD
VSD
Body Diode
Body Diode
Forward Voltage Drop
Forward Voltage Drop
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
Mechanical Dimensions
TO - 220
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
Package Dimensions (Continued)
TO-220F
2.54 Ä…0.20
10.16 Ä…0.20 Å‚3.18 Ä…0.10
(7.00) (0.70)
(1.00x45°)
MAX1.47
0.80 Ä…0.10
#1
0.35 Ä…0.10
+0.10
0.50
 0.05 2.76 Ä…0.20
2.54TYP 2.54TYP
[2.54 Ä…0.20] [2.54 Ä…0.20]
9.40 Ä…0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP5N60C/FQPF5N60C
3.30
Ä…
0.10
6.68
Ä…
0.20
15.87
Ä…
0.20
15.80
Ä…
0.20
9.75
Ä…
0.30
4.70
Ä…
0.20
(30
°
)
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation Rev. I3