©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A
BUZ11
30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Features
• 30A, 50V
• r
DS(ON)
= 0.040
Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ11
TO-220AB
BUZ11
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
June 1999
File Number
2253.2
[ /Title
(BUZ1
1)
/Sub-
ject
(30A,
50V,
0.040
Ohm,
N-
Chan-
nel
Power
MOS-
FET)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel
Power
MOS-
FET,
TO-
220AB
)
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
Data Sheet
©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ11
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
50
V
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
50
V
Continuous Drain Current
T
C
= 30
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
30
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
120
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
75
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
µ
A, V
GS
= 0V
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
2.1
3
4
V
Zero Gate Voltage Drain Current
I
DSS
T
J
= 25
o
C, V
DS
= 50V, V
GS
= 0V
-
20
250
µ
A
T
J
= 125
o
C, V
DS
= 50V, V
GS
= 0V
-
100
1000
µ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
10
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 15A, V
GS
= 10V (Figure 8)
-
0.03
0.04
Ω
Forward Transconductance (Note 2)
gfs
V
DS
= 25V, I
D
= 15A (Figure 11)
4
8
-
S
Turn-On Delay Time
t
d(ON)
V
CC
= 30V, I
D
≈
3A, V
GS
= 10V, R
GS
= 50
Ω,
R
L
= 10
Ω
-
30
45
ns
Rise Time
t
r
-
70
110
ns
Turn-Off Delay Time
t
d(OFF)
-
180
230
ns
Fall Time
t
f
-
130
170
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 10)
-
1500
2000
pF
Output Capacitance
C
OSS
-
750
1100
pF
Reverse Transfer Capacitance
C
RSS
-
250
400
pF
Thermal Resistance Junction to Case
R
θ
JC
≤
1.67
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
≤
75
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
T
C
= 25
o
C
-
-
30
A
Pulsed Source to Drain Current
I
SDM
T
C
= 25
o
C
-
-
120
A
Source to Drain Diode Voltage
V
SD
T
J
= 25
o
C, I
SD
= 60A, V
GS
= 0V
-
1.7
2.6
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 30A, dI
SD
/dt = 100A/
µ
s,
V
R
= 30V
-
200
-
ns
Reverse Recovery Charge
Q
RR
-
0.25
-
µ
C
NOTES:
2. Pulse Test: Pulse width
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
BUZ11
©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
T
A
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
40
30
20
10
0
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
V
GS
> 10V
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
JC,
TRANSIENT THERMAL
IMPED
ANCE
1
0.1
0.01
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
t
1
t
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
100
µs
10
µs
DC
1ms
10ms
100ms
10
3
10
2
10
1
10
0
10
0
10
1
10
2
2.5
µs
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
60
50
40
30
20
10
0
I
D
, DRAIN CURRENT (A)
0
1
2
3
4
5
6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 8.0V
V
GS
= 7.5V
V
GS
= 7.0V
V
GS
= 6.5V
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
10V
V
GS
= 20V
PULSE DURATION = 80
µs
P
D
= 75W
DUTY CYCLE = 0.5% MAX
BUZ11
©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
20
15
10
5
0
I
DS(ON),
DRAIN
T
O
SOURCE CURRENT (A)
0
1
2
3
4
5
6
7
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
V
DS
= 25V
DUTY CYCLE = 0.5% MAX
0.15
0.10
0.05
0
0
20
40
60
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, ON-ST
A
TE RESIST
ANCE (
Ω
)
5.5V
6V
6.5V
7V
7.5V
8V
9V
20V
10V
PULSE DURATION = 80
µs
V
GS
= 5V
DUTY CYCLE = 0.5% MAX
-50
0
50
100
150
r
DS(ON)
, DRAIN
T
O
SOURCE
0.08
0.06
0.04
0.02
0
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 15A, V
GS
= 10V
PULSE DURATION = 80
µs
ON RESIST
ANCE (
Ω
)
DUTY CYCLE = 0.5% MAX
-50
0
50
100
150
V
GS(TH)
, GA
TE
THRESHOLD
V
O
L
T
A
G
E (V)
4
3
2
1
0
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 1mA
V
DS
= V
GS
0
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
10
-2
10
-1
10
0
C,
CAP
A
CIT
ANCE (nF)
10
1
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈ C
DS
+ C
GD
10
8
6
4
2
0
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE
(S)
T
J
= 25
o
C
PULSE DURATION = 80
µs
V
DS
= 25V
DUTY CYCLE = 0.5% MAX
BUZ11
©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
0.5
1.0
1.5
2.0
2.5
3.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
3
10
2
10
1
10
0
10
-1
I
SD
, SOURCE
T
O
DRAIN CURRENT (A)
PULSE DURATION = 80
µs
T
J
= 25
o
C
T
J
= 150
o
C
DUTY CYCLE = 0.5% MAX
15
10
5
0
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
GS
, GA
TE
T
O
SOURCE
V
O
L
T
A
GE (V)
I
D
= 45A
V
DS
= 10V
V
DS
= 40V
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
µF
12V
BATTERY
50k
Ω
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2
µF
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
g(REF)
0
BUZ11
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
Rev. H
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™
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