Semiconductor Group

548

PNP Silicon Transistors

BF 421

With High Reverse Voltage

BF 423

5.91

Maximum Ratings

Type

Ordering Code

Marking

Package

1)

Pin Configuration

BF 421
BF 423

Q62702-F532
Q62702-F496

–

TO-92

1

2

3

E

C

B

1)

For detailed information see chapter Package Outlines.

2)

Mounted on Al heat sink 15 mm

×

25 mm

×

0.5 mm.

Parameter

Symbol

Values

Unit

Collector-emitter voltage

V

CE0

V

Collector current

I

C

mA

Junction temperature

T

j

˚C

Total power dissipation,

T

C

= 88 ˚C

P

tot

mW

Storage temperature range

T

stg

Collector-emitter voltage

R

BE

= 2.7 k

V

CER

Thermal Resistance

Junction - ambient

R

th JA

≤

150

K/W

50

830

150

– 65 … + 150

Collector-base voltage

V

CB0

–

250

300

–

BF 421

BF 423

Peak base current

I

BM

100

300

250

Emitter-base voltage

V

EB0

5

Junction - case

2)

R

th JC

≤

75

●

High breakdown voltage

●

Low collector-emitter saturation voltage

●

Low capacitance

●

Complementary types: BF 420, BF 422 (NPN)

1

2

3

Semiconductor Group

549

BF 421

BF 423

Electrical Characteristics
at

T

A

= 25 ˚C, unless otherwise specified.

µ

A

Collector cutoff current

V

CE

= 200 V,

R

BE

= 2.7 k ,

T

A

= 150 ˚C

Ω

I

CER

–

–

10

V

Collector-emitter breakdown voltage

I

C

= 1 mA

BF 423

V

(BR)CE0

250

–

–

nA

Collector cutoff current

V

CB

= 200 V

I

CB0

–

–

10

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

I

C

= 10

µ

A

BF 421
BF 423

V

(BR)CB0

300
250

–
–

–
–

Emitter-base breakdown voltage,

I

E

= 10

µ

A

V

(BR)EB0

5

–

–

V

Collector-emitter saturation voltage

1)

I

C

= 25 mA,

T

j

=150 ˚C

V

CEsatRF

–

–

20

–

DC current gain

I

C

= 100

µ

A,

V

CE

= 20 V

I

C

= 25 mA,

V

CE

= 20 V

h

FE

15
50

–
–

–
–

Emitter cutoff current,

V

EB

= 5 V

I

EB0

–

–

10

MHz

Transition frequency

I

C

= 20 mA,

V

CE

= 10 V,

f

= 20 MHz

f

T

–

100

–

AC characteristics

pF

Output capacitance

V

CB

= 30 V,

f

= 1 MHz

C

obo

–

0.8

–

Collector-emitter breakdown voltage

I

C

= 10

µ

A,

R

BE

= 2.7 k

BF 421

V

(BR)CER

300

–

–

1)

Pulse test:

t

≤

300

µ

s,

D

≤

2 %.

Semiconductor Group

550

BF 421

BF 423

Total power dissipation

P

tot

=

f

(

T

A

;

T

C

)

Permissible pulse load

R

thJA

=

f

(

t

p

)

Collector current

I

C

=

f

(

V

BE

)

V

CE

= 20 V,

T

A

= 25 ˚C

Collector cutoff current

I

CB0

=

f

(

T

A

)

V

CB

= 200 V

Semiconductor Group

551

BF 421

BF 423

DC current gain

h

FE

=

f

(

I

C

)

V

CE

= 20 V,

T

A

= 25 ˚C

Output capacitance

C

obo

=

f

(

V

CB

)

I

C

= 0,

f

= 1 MHz

Transition frequency

f

T

=

f

(

I

C

)

V

CE

= 10 V,

f

= 20 MHz