1

Transistor

2SD1330

Silicon NPN epitaxial planer type

For low-voltage output amplification

For muting

For DC-DC converter

■

Features

●

Low collector to emitter saturation voltage V

CE(sat)

.

●

Low ON resistance R

on

.

●

High foward current transfer ratio h

FE

.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

■

Absolute Maximum Ratings

(Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base
2:Collector

EIAJ:SC–71

3:Emitter

M Type Mold Package

6.9

±

0.1

0.55

±

0.1

0.45

±

0.05

1.0

±

0.1

1.0

2.5

±

0.1

1.0

1.5

1.5 R0.9

R0.9

R0.7

0.4

0.85

3.5

±

0.1

2.0

±

0.2

2.4

±

0.2

1.25

±

0.05

4.1

±

0.2

4

.5

±

0.1

2.5

2.5

1

2

3

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

25

20

12

1

0.5

600

150

–55 ~ +150

Unit

V

V

V

A

A

mW

˚C

˚C

■

Electrical Characteristics

(Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

ON resistanse

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

*1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

R

on

*3

Conditions

V

CB

= 25V, I

C

= 0

I

C

= 10

µ

A, I

E

= 0

I

C

= 1mA, I

B

= 0

I

E

= 10

µ

A, I

C

= 0

V

CE

= 2V, I

C

= 0.5A

*2

V

CE

= 2V, I

C

= 1A

*2

I

C

= 0.5A, I

B

= 20mA

I

C

= 0.5A, I

B

= 50mA

V

CB

= 10V, I

E

= –50mA, f = 200MHz

V

CB

= 10V, I

E

= 0, f = 1MHz

min

25

20

12

200

60

typ

0.13

200

10

1.0

max

100

800

0.4

1.2

Unit

nA

V

V

V

V

V

MHz

pF

Ω

*1

h

FE1

Rank classification

Rank

R

S

T

h

FE1

200 ~ 350

300 ~ 500

400 ~ 800

*2

Pulse measurement

*3

R

on

Measurement circuit

V

B

I

B

=1mA

R

on

=

✕

1000(

Ω

)

f=1kHz
V=0.3V

1k

Ω

V

A

V

V

V

A

–V

B

V

B

2

Transistor

2SD1330

P

C

— Ta

I

C

— V

CE

V

CE(sat)

— I

C

V

BE(sat)

— I

C

h

FE

— I

C

f

T

— I

E

C

ob

— V

CB

R

on

— I

B

0

6

5

4

1

3

2

0

1.2

1.0

0.8

0.6

0.4

0.2

Ta=25˚C

2.5mA

2.0mA

1.5mA

0.5mA

1.0mA

3.0mA

3.5mA

I

B

=4.0mA

Collector to emitter voltage V

CE

(V)

Collector current I

C

(A

)

0.01

0.1

1

10

0.03

0.3

3

0.01

0.03

0.1

0.3

1

3

10

30

100

I

C

/I

B

=25

25˚C

–25˚C

Ta=75˚C

Collector current I

C

(A)

Collector to emitter saturation voltage V

CE(sat)

(V

)

0.01

0.1

1

10

0.03

0.3

3

0.01

0.03

0.1

0.3

1

3

10

30

100

I

C

/I

B

=10

Ta=–25˚C

25˚C

75˚C

Collector current I

C

(A)

Base to emitter saturation voltage V

BE(sat)

(V

)

0.01

0.1

1

10

0.03

0.3

3

0

1200

1000

800

600

400

200

V

CE

=2V

Ta=75˚C

25˚C

–25˚C

Collector current I

C

(A)

Forward current transfer ratio h

FE

–1

–3

–10

–30

–100

0

400

300

100

250

350

200

50

150

V

CB

=10V

Ta=25˚C

Emitter current I

E

(A)

Transition frequency f

T

(MHz

)

1

3

10

30

100

0

24

20

16

12

8

4

I

E

=0

Ta=25˚C
f=1MHz

Collector to base voltage V

CB

(V)

Collector output capacitance C

ob

(pF

)

0.01

0.1

1

10

0.03

0.3

3

0.1

0.3

1

3

10

30

100

300

1000

f=1kHz
V=0.3V

V

B

R

on

measuring circuit

I

B

=1mA

V

A

V

Base current I

B

(mA)

ON resistance R

on

(

Ω

)

0

160

40

120

80

140

20

100

60

0

1000

800

600

400

200

Ambient temperature Ta (˚C)

Collector power dissipation P

C

(mW

)