INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Darlington Power Transistor

2SD1336

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V

(BR)CEO

= 100V(Min)

·High DC Current Gain

: h

FE

= 1500(Min) @ I

C

= 5A, V

CE

= 4V

·High Speed Switching

APPLICATIONS

·High power switching applications

ABSOLUTE MAXIMUM RATINGS(T

a

=25

℃)

SYMBOL PARAMETER VALUE

UNIT

V

CBO

Collector-Base Voltage

150

V

V

CEO

Collector-Emitter Voltage

100

V

V

EBO

Emitter-Base Voltage

8

V

I

C

Collector Current-Continuous

6

A

I

CM

Collector Current-Peak

10

A

Collector Power Dissipation
@ T

a

=25℃

2

P

C

Collector Power Dissipation
@ T

C

=25℃

35

W

T

J

Junction Temperature

150

℃

T

stg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Darlington Power Transistor

2SD1336

ELECTRICAL CHARACTERISTICS

T

C

=25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V

CEO(SUS)

Collector-Emitter Sustaining Voltage

I

C

= 2A; L= 10mH

100

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

= 200mA; I

C

= 0

8

V

V

CE(

sat

)

Collector-Emitter Saturation Voltage

I

C

= 5A; I

B

= 12.5mA

B

1.5

V

V

BE(

sat

)

Base-Emitter Saturation Voltage

I

C

= 5A; I

B

= 12.5mA

B

2.5

V

I

CBO

Collector Cutoff Current

V

CB

= 150V; I

E

= 0

100

μA

h

FE

DC Current Gain

I

C

= 5A; V

CE

=

4V

1500

f

T

Current-Gain—Bandwidth Product

I

C

= 0.5A; V

CE

= 10V; f= 1MHz

20

MHz

Switching times

t

on

Turn-on Time

0.7

μs

t

stg

Storage Time

4.0

μs

t

f

Fall Time

I

C

= 5A, I

B1

= -I

B2

= 12.5mA;

V

CC

= 50V

1.5 μs

isc Website：www.iscsemi.cn

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