©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

TI

P125/

126/

127

PNP Epitaxial Darlington Transistor

Absolute Maximum Ratings

T

C

=25

°

C unless otherwise noted

Electrical Characteristics

T

C

=25

°

C unless otherwise noted

* Pulse Test : PW

≤

300

µ

s, Duty cycle

≤

2%

Symbol

Parameter

Value

Units

V

CBO

Collector-Base Voltage : TIP125

: TIP126
: TIP127

- 60
- 80

- 100

V
V
V

V

CEO

Collector-Emitter Voltage : TIP125

: TIP126
: TIP127

- 60
- 80

- 100

V
V
V

V

EBO

Emitter-Base Voltage

- 5

V

I

C

Collector Current (DC)

- 5

A

I

CP

Collector Current (Pulse)

- 8

A

I

B

Base Current (DC)

- 120

mA

P

C

Collector Dissipation (T

a

=25

°

C)

2

W

Collector Dissipation (T

C

=25

°

C)

65

W

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

- 65 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Max.

Units

V

CEO

(sus)

Collector-Emitter Sustaining Voltage

: TIP125
: TIP126
: TIP127

I

C

= -100mA, I

B

= 0

-60
-80

-120

V
V
V

I

CEO

Collector Cut-off Current

: TIP125
: TIP126
: TIP127

V

CE

= -30V, I

B

= 0

V

CE

= -40V, I

B

= 0

V

CE

= -50V, I

B

= 0

-2
-2
-2

mA
mA
mA

I

CBO

Collector Cut-off Current

: TIP125
: TIP126
: TIP127

V

CB

= -60V, I

E

= 0

V

CB

= -80V, I

E

= 0

V

CB

= -100V, I

E

= 0

-1
-1
-1

mA
mA
mA

I

EBO

Emitter Cut-off Current

V

BE

= -5V, I

C

= 0

-2

mA

h

FE

* DC Current Gain

V

CE

= -3V, I

C

= 0.5A

V

CE

= -3V, I

C

= -3A

1000
1000

V

CE

(sat)

* Collector-Emitter Saturation Voltage

I

C

= -3A, I

B

= -12mA

I

C

=-5A, I

B

=-20mA

-2
-4

V
V

V

BE

(on)

* Base-Emitter ON Voltage

V

CE

= -3V, I

C

= -3A

-2.5

V

C

ob

Output Capacitance

V

CB

= -10V, I

E

= 0, f = 0.1MHz

300

pF

TIP125/126/127

Medium Power Linear Switching Applications

• Complementary to TIP120/121/122

Equivalent Circuit

B

E

C

R1

R2

R1

8

k

Ω

≅

R2

0.12

k

Ω

≅

1.Base 2.Collector 3.Emitter

1

TO-220

©2001 Fairchild Semiconductor Corporation

TI

P125/

126/

127

Rev. A1, June 2001

Typical Characteristics

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 3. Output and Input Capacitance

vs. Reverse Voltage

Figure 4. Safe Operating Area

Figure 5. Power Derating

-0.1

-1

-10

100

1k

10k

V

CE

= 4V

h

FE

, DC CU

RRE

NT

G

A

IN

I

C

[A], COLLECTOR CURRENT

-0.1

-1

-10

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

I

C

= 250I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(s

a

t)

, V

CE

(s

a

t)

[V]

, SATURAT

IO

N

VO

L

T

AG

E

I

C

[A], COLLECTOR CURRENT

-0.1

-1

-10

-100

10

100

1000

C

ob

f = 0.1MHz

V

CB

[V], COLLECTOR-BASE VOLTAGE

V

EB

[V], EMITTER-BASE VOLTAGE

C

ob

[pF

] C

ib

[p

F]

, CAPACI

T

ANCE

C

ib

-1

-10

-100

-0.01

-0.1

-1

-10

TIP126

TIP127

TIP125

DC

5m

s

100us

500us

1m

s

I

C

[A

], C

O

LL

E

C

T

O

R CU

RRE

NT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

0

15

30

45

60

75

90

P

C

[W],

P

O

WE

R

D

IS

S

IPATIO

N

T

C

[

o

C], CASE TEMPERATURE

Package Demensions

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

TI

P125/

126/

127

Dimensions in Millimeters

4.50

±

0.20

9.90

±

0.20

1.52

±

0.10

0.80

±

0.10

2.40

±

0.20

10.00

±

0.20

1.27

±

0.10

ø3.60

±

0.10

(8.70)

2.80

±

0.10

15.90

±

0.20

10.08

±

0.30

18.95MAX.

(1.70)

(3.70)

(3.00)

(1.46)

(1.00)

(45

°

)

9.20

±

0.20

13.08

±

0.20

1.30

±

0.10

1.30

+0.10
–0.05

0.50

+0.10
–0.05

2.54TYP

[2.54

±

0.20

]

2.54TYP

[2.54

±

0.20

]

TO-220

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

©2001 Fairchild Semiconductor Corporation

Rev. H3

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E

2

CMOS™

EnSigna™
FACT™
FACT Quiet Series™

FAST

®

FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™

OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench

®

QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER

®

SMART START™

STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET

®

VCX™

STAR*POWER is used under license