TIP120/121/122
Medium Power Linear Switching Applications
" Complementary to TIP125/126/127
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Equivalent Circuit
Absolute Maximum Ratings TC=25°C unless otherwise noted
C
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP120 60 V
: TIP121 80 V
B
: TIP122 100 V
VCEO Collector-Emitter Voltage : TIP120 60 V
: TIP121 80 V
: TIP122 100 V
R1 R2
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 5 A
E
R1 E" 8k&!
R2 E" 0.12k&!
ICP Collector Current (Pulse) 8 A
IB Base Current (DC) 120 mA
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP120 IC = 100mA, IB = 0 60 V
: TIP121 80 V
: TIP122 100 V
ICEO Collector Cut-off Current
: TIP120 VCE = 30V, IB = 0 0.5 mA
: TIP121 VCE = 40V, IB = 0 0.5 mA
: TIP122 VCE = 50V, IB = 0 0.5 mA
ICBO Collector Cut-off Current
: TIP120 VCB = 60V, IE = 0 0.2 mA
: TIP121 VCB = 80V, IE = 0 0.2 mA
: TIP122 VCB = 100V, IE = 0 0.2 mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V,IC = 0.5A 1000
VCE = 3V, IC = 3A 1000
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2.0 V
IC = 5A, IB = 20mA 4.0 V
VBE(on) * Base-Emitter ON Voltage VCE = 3V, IC = 3A 2.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF
* Pulse Test : PWd"300µs, Duty cycle d"2%
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP120/121/122
Typical characteristics
10000
3.5
VCE = 4V
IC = 250IB
3.0
2.5
1000
2.0
VBE(sat)
1.5
1.0
V (sat)
CE
0.5
100
0.1 1 10
0.1 1 10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
f=0.1MHz
1
100
Cob
0.1
TIP120
Cib
TIP121
TIP122
10
0.1 1 10 100 0.01
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Figure 3. Output and Input Capacitance Figure 4. Safe Operating Area
vs. Reverse Voltage
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP120/121/122
FE
h
, DC CURRENT GAIN
BE
CE
V
(sat), V
(sat)[V], SATURATION VOLTAGE
ob
ib
C [pF] C [pF], CAPACITANCE
C
I [A], COLLECTOR CURRENT
C
P [W], POWER DISSIPATION
10
0us
50
0us
1m
s
5m
DC
s
Package Demensions
TO-220
9.90 Ä…0.20 4.50 Ä…0.20
(8.70)
+0.10
1.30
Å‚3.60 Ä…0.10
 0.05
1.27 Ä…0.10 1.52 Ä…0.10
0.80 Ä…0.10
+0.10
0.50 2.40 Ä…0.20
 0.05
2.54TYP 2.54TYP
[2.54 Ä…0.20] [2.54 Ä…0.20]
10.00 Ä…0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP120/121/122
(1.70)
1.30
Ä…
0.10
2.80
Ä…
0.10
18.95MAX.
15.90
Ä…
0.20
9.20
Ä…
0.20
(1.46)
(3.00)
(3.70)
(1.00)
13.08
Ä…
0.20
10.08
Ä…
0.30
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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CROSSVOLT"! GlobalOptoisolator"! Power247"! SuperSOT"!-6
DenseTrench"! GTO"! PowerTrench® SuperSOT"!-8
HiSeC"! QFET"! SyncFET"!
DOME"!
EcoSPARK"! ISOPLANAR"! QS"! TruTranslation"!
E2CMOS"! LittleFET"! QT Optoelectronics"! TinyLogic"!
EnSigna"! MicroFET"! Quiet Series"! UHC"!
FACT"! MICROWIRE"! SLIENT SWITCHER® UltraFET®
FACT Quiet Series"! OPTOLOGIC"! SMART START"! VCX"!
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation Rev. H3