13007

NPN Epitaxial Silicon Transistor

Elite Enterprises (H.K.) Co., Ltd.

Part No.: 13007

Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
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HIGH VOLTAGE SWITCH MODE
APPLICATION

Collector-Emitter Voltage: V

CEO

=400V

Collector Dissipation: P

C

(max)=80W

Absolute Maximum Ratings (TA=25

o

C)

Characteristic Symbol

Rating

Unit

Collector-Base Voltage

V

CBO

700 V

Collector-Emitter Voltage

V

CEO

400 V

Emitter-Base Voltage

V

EBO

9 V

Collector Current

I

C

8

A

Collector Dissipation

P

C

80

W

Junction Temperature

T

J

150

o

C

Storage Temperature

T

STG

-55~+150

o

C

Electrical Characteristics (TA=25

o

C)

Characteristic Symbol

Test

Conditions

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

BV

CEO

I

C

=10mA, I

B

=0 400

V

Emitter Cut-off Current

I

EBO

V

EB

=9V, I

C

=0

1

mA

DC Current Gain

h

FE(1)

V

CE

=5V, I

C

=2A

8 60

h

FE(2)

V

CE

=5V, I

C

=5A

5 30

Collector-Emitter Saturation Voltage

V

CE(sat1)

I

C

=2A, I

B

=0.4A

1

V

V

CE(sat2)

I

C

=5A, I

B

=1A

2

V

V

CE(sat3)

I

C

=8A, I

B

=2A

3

V

Base-emitter Saturation Voltage

V

BE(sat1)

I

C

=2A, I

B

=0.4A

1.2

V

V

BE(sat2)

I

C

=5A, I

B

=1A

1.6

V

Output Capacitance

C

OB

V

CB

=10V,

f=0.1MHz

110 pF

Current Gain Bandwidth Product

f

T

V

CE

=10V, I

C

=0.5A 4

MHz

Turn On Time

t

ON

V

CC

=125V, I

C

=5A

1.6

µS

Storage Time

t

STG

1

B1

=-1

B2

=1A

3

µS

Fall Time

t

f

R

L

=50Ω

0.7

µS

* Pulse Test : PW < 300μs, Duty cycles < 2%

1. Base

2. Collector

3. Emitter

TO-220