STB45NF06
N-CHANNEL 60V - 0.022&! - 38A D2PAK
STripFET"! POWER MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STB45NF06 60V <0.028&! 38A
TYPICAL RDS(on) = 0.022&!
EXCEPTIONAL dv/dt CAPABILITY
3
DESCRIPTION
1
This Power Mosfet is the latest development of
D2PAK
STMicroelectronics unique  Single Feature
Size"! strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k&!) 60 V
VGS Gate- source Voltage Ä…20 V
ID Drain Current (continuos) at TC = 25°C 38 A
ID Drain Current (continuos) at TC = 100°C 26 A
IDM ( ) Drain Current (pulsed) 152 A
PTOT Total Dissipation at TC = 25°C 80 W
Derating Factor 0.53 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature  65 to 175 °C
Tj Max. Operating Junction Temperature 175 °C
( ) Pulse width limited by safe operating area
(1) ISD d"38A, di/dt d"300A/µs, VDD d" V(BR)DSS, Tj d" TJMAX.
Aug 2000 1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STB45NF06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.87 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 38 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 135 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 60 V
Breakdown Voltage
VDS = Max Rating 1 µA
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C 10 µA
IGSS Gate-body Leakage VGS = Ä…20V Ä…100 nA
Current (VDS = 0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on) Static Drain-source On VGS = 10 V, ID = 19 A 0.022 0.028 &!
Resistance
VDS > ID(on) x RDS(on)max,
ID(on) On State Drain Current 45 A
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VDS > ID(on) x RDS(on)max,
gfs (1) Forward Transconductance 24 S
ID =19 A
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1730 pF
Coss Output Capacitance 215 pF
Crss Reverse Transfer 63 pF
Capacitance
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STB45NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30V, ID = 19A 20 ns
RG = 4.7&! VGS = 10V
tr Rise Time 100 ns
(see test circuit, Figure 3)
VDD = 48V, ID = 38A,
Qg Total Gate Charge 43 58 nC
VGS = 10V
Qgs Gate-Source Charge 9 nC
Qgd Gate-Drain Charge 15 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VDD = 30V, ID = 19A,
td(off) Turn-off-Delay Time RG =4.7&!, VGS = 10V 50 ns
(see test circuit, Figure 3)
tf Fall Time 20 ns
Vclamp =48V, ID =38A
td(off) Off-voltage Rise Time 45 ns
RG =4.7&!, VGS = 10V
tf Fall Time (see test circuit, Figure 5) 42 ns
tc Cross-over Time 60 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 38 A
ISDM (1) Source-drain Current (pulsed) 152 A
VSD (2) Forward On Voltage ISD = 38A, VGS = 0 1.5 V
ISD = 38A, di/dt = 100A/µs,
trr Reverse Recovery Time VDD = 100V, Tj = 150°C 95 ns
(see test circuit, Figure 5)
Qrr Reverse Recovery Charge 260 nC
IRRM Reverse Recovery Current 5.5 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/6
STB45NF06
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STB45NF06
TO-263 (D2PAK) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
D
A
C
C2 DETAIL "A"
DETAIL "A"
A1
B2 B
E G
L3
L2
L
P011P6/E
5/6
A2
STB45NF06
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6/6
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