IKW75N60T
TRENCHSTOP"! Series q
Low Loss DuoPack : IGBT in TRENCHSTOP"! and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
�� Very low VCE(sat) 1.5V (typ.)
�� Maximum Junction Temperature 175�C
�� Short circuit withstand time 5m�s
G
�� Positive temperature coefficient in VCE(sat)
E
�� very tight parameter distribution
�� high ruggedness, temperature stable behaviour
�� very high switching speed
�� Low EMI
�� Very soft, fast recovery anti-parallel Emitter Controlled HE diode
�� Qualified according to JEDEC1) for target applications
PG-TO247-3
�� Pb-free lead plating; RoHS compliant
�� Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
�� Frequency Converters
�� Uninterrupted Power Supply
Type VCE IC VCE(sat),Tj=25�C Tj,max Marking Package
IKW75N60T 600V 75A 1.5V K75T60 PG-TO247-3
175��C
Maximum Ratings
Parameter Symbol Value Unit
VC E 600 V
Collector-emitter voltage, Tj e" 25��C
802)
TC = 25��C
DC collector current, limited by Tjmax IC
75
TC = 100��C
Pulsed collector current, tp limited by Tjmax IC p u l s 225
A
Turn off safe operating area VCE = 600V, Tj = 175��C, tp = 1�s - 225
802)
TC = 25��C
Diode forward current, limited by Tjmax IF
75
TC = 100��C
Diode pulsed current, tp limited by Tjmax IF p u l s 225
Gate-emitter voltage VG E V
ą�20
Short circuit withstand time3)
tS C 5 m�s
VGE = 15V, VCC Ł� 400V, Tj Ł� 150��C
Pt o t 428 W
Power dissipation TC = 25��C
Operating junction temperature Tj -40...+175
Storage temperature Ts t g -55...+150 ��C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ts o l d 260
1)
J-STD-020 and JESD-022
2)
Value limited by bondwire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
IKW75N60T
TRENCHSTOP"! Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, Rt h J C 0.35 K/W
junction  case
Diode thermal resistance, Rt h J C D 0.6
junction  case
Thermal resistance, Rt h J A 40
junction  ambient
Electrical Characteristic, at Tj = 25 ��C, unless otherwise specified
Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V( B R ) C E S VG E=0V, IC=0.2mA 600 - - V
Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=75A
- 1.5 2.0
Tj=25��C
- 1.9 -
Tj=175��C
Diode forward voltage VF VG E=0V, IF=75A
- 1.65 2.0
Tj=25��C
- 1.6 -
Tj=175��C
Gate-emitter threshold voltage VG E ( t h ) IC=1.2m A,VC E=VG E 4.1 4.9 5.7
Zero gate voltage collector current IC E S VC E=600V, �A
VG E=0V
Tj=25��C
- - 40
Tj=175��C
- - 5000
Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nA
Transconductance gf s VC E=20V, IC=75A - 41 - S
Integrated gate resistor RG i n t - �
Dynamic Characteristic
Input capacitance Ci s s VC E=25V, - - pF
4620
Output capacitance Co s s VG E=0V,
- -
288
Reverse transfer capacitance Cr s s f=1MHz - -
137
Gate charge QG a t e VC C=480V, IC=75A - 470 - nC
VG E=15V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current IC ( S C )
VG E=15V,tS CŁ�5m�s - 690 - A
VC C = 400V,
Allowed number of short circuits: <1000; time
between short circuits: >1s.
Tj Ł� 150��C
2 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
IKW75N60T
TRENCHSTOP"! Series q
Switching Characteristic, Inductive Load, at Tj=25 ��C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T =25��C, - 33 - ns
j
V =40 0V,I =75A,
C C C
Rise time tr - 36 -
V =0 /15V,
G E
rG=5W� , L =100nH , - 330 -
Turn-off delay time td ( o f f )
s�
Cs�=39pF
Fall time tf - 35 -
L , Cs� f rom Fig. E
s�
Turn-on energy Eo n Energy losses include - 2.0 - mJ
Turn-off energy Eo f f  tail and diode reverse - 2.5 -
recovery.
Total switching energy Et s - 4.5 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time tr r - 121 - ns
Tj=25��C,
Diode reverse recovery charge Qr r VR=400V, IF=75A, - 2.4 - �C
Diode peak reverse recovery current Ir r m diF/dt=1460A/m�s - 38.5 - A
Diode peak rate of fall of reverse dir r/dt - 921 - A/m�s
recovery current during tb
Switching Characteristic, Inductive Load, at Tj=175 ��C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T =175��C, - 32 - ns
j
V =40 0V,I =75A,
C C C
Rise time tr - 37 -
V =0 /15V,
G E
Turn-off delay time td ( o f f ) r =5W� , L =100nH , - 363 -
G
s�
Cs�=39pF
Fall time tf - 38 -
L , Cs� f rom Fig. E
s�
Turn-on energy Eo n Energy losses include - 2.9 - mJ
Turn-off energy Eo f f  tail and diode reverse - 2.9 -
recovery.
Total switching energy Et s - 5.8 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time tr r - 182 - ns
Tj=175��C
Diode reverse recovery charge Qr r VR=400V, IF=75A, - 5.8 - �C
Diode peak reverse recovery current Ir r m diF/dt=1460A/m�s - 56.2 - A
Diode peak rate of fall of reverse dir r/dt - 1013 - A/m�s
recovery current during tb
3 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
IKW75N60T
TRENCHSTOP"! Series q
200A
150A
TC=80�C
100A
TC=110�C
Ic
50A
Ic
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency
(D = 0, TC = 25��C, Tj Ł�175��C;
(Tj Ł� 175��C, D = 0.5, VCE = 400V, VGE=0/15V)
VGE = 0/15V, rG = 5W�)
400W
120A
350W
300W
90A
250W
200W
60A
150W
100W
30A
50W
0A
0W
25�C 75�C 125�C
25�C 50�C 75�C 100�C 125�C 150�C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of Figure 4. DC Collector current as a function
case temperature of case temperature
(Tj Ł� 175��C) (VGE ł� 15V, Tj Ł� 175��C)
4 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
C
C
I
,
COLLECTOR CURRENT
I
,
COLLECTOR CURRENT
tot
C
P
,
POWER DISSIPATION
I
,
COLLECTOR CURRENT
IKW75N60T
TRENCHSTOP"! Series q
120A
120A
VGE=20V
VGE=20V
15V
15V
90A
13V 90A
13V
11V
11V
9V
9V
60A
60A
7V
7V
30A
30A
0A
0A
0V 1V 2V 3V
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25�C) (Tj = 175�C)
2.5V IC=150A
80A
2.0V
60A
IC=75A
1.5V
40A
IC=37.5A
1.0V
TJ=175�C
20A
0.5V
25�C
0.0V
0A
0�C 50�C 100�C 150�C
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)
5 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
C
C
I
,
COLLECTOR CURRENT
I
,
COLLECTOR CURRENT
C
I
,
COLLECTOR CURRENT
CE(sat),
V
COLLECTOR
-
EMITT SATURATION VOLTAGE
IKW75N60T
TRENCHSTOP"! Series q
td(off)
td(off)
100ns
100ns
tf
tf
tr
td(on)
td(on)
tr
10ns 10ns
0A 40A 80A 120A
5�W� 1�0�W� 1�5�W�
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175�C, (inductive load, TJ = 175�C,
VCE = 400V, VGE = 0/15V, rG = 5&!, VCE= 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)
7V
td(off)
6V
m ax.
typ.
5V
4V
m in.
100ns
3V
tf
2V
tr
1V
td(on)
0V
25�C 50�C 75�C 100�C 125�C 150�C
-50�C 0�C 50�C 100�C 150�C
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 1.2mA)
VGE = 0/15V, IC = 75A, rG=5&!,
Dynamic test circuit in Figure E)
6 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
t,
SWITCHING TIMES
t,
SWITCHING TIMES
t,
SWITCHING TIMES
GE(th
)
,
V
GATE
-
EMITT TRSHOLD VOLTAGE
IKW75N60T
TRENCHSTOP"! Series q
*) Eon and Ets include losses
*) Eon and Ets include losses
Ets*
due to diode recovery
due to diode recovery
Ets*
8.0m J
12.0mJ
6.0m J
Eon*
8.0mJ
4.0m J
Eon*
Eoff
4.0mJ
2.0m J
Eoff
0.0m J
0.0mJ
0A 20A 40A 60A 80A 100A 120A 140A 0�W� 5�W� 1�0�W� 1�5�W�
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175�C, (inductive load, TJ = 175�C,
VCE = 400V, VGE = 0/15V, rG = 5&!, VCE = 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)
*) Eon and Ets include losses *) Eon and Ets include losses
due to diode recovery
due to diode recovery
Ets*
5.0mJ
8mJ
4.0mJ
Eon*
6mJ
Ets*
3.0mJ
Eoff
4mJ
2.0mJ
Eoff
Eon*
2mJ
1.0mJ
0.0mJ
0mJ
25�C 50�C 75�C 100�C 125�C 150�C 300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175�C,
VGE = 0/15V, IC = 75A, rG = 5&!, VGE = 0/15V, IC = 75A, rG = 5&!,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)
7 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
E
,
SWITCHING ENERGY LOSSES
E
,
SWITCHING ENERGY LOSSES
E
,
SWITCHING ENERGY LOSSES
E
,
SWITCHING ENERGY LOSSES
IKW75N60T
TRENCHSTOP"! Series q
Ciss
15V
1nF
120V
10V
480V
Coss
5V
Crss
100pF
0V0nC 100nC 200nC 300nC 400nC
0V 10V 20V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=75 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12�s
10�s
1000
8�s
750
6�s
500
4�s
250
2�s
0
0�s
12 13 14 15 16 17 18 19 20 10V 11V 12V 13V 14V
VGE, GATE-EMITTER VOLTAGE VGE, GATE- EMITTER VOLTAGE
Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=400V, start at TJ=25�C,
TJmax<150�C)
(VCE Ł� 400V, Tj Ł� 150��C)
8 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
c,
CAPACITANCE
GE
V
,
GATE
-
EMITTER VOLTAGE
SC
t
,
SHORT CIRCUIT WITHSTAND TIME
C(sc)
I
, short circuit
COLLECTOR CURRENT
IKW75N60T
TRENCHSTOP"! Series q
D=0.5
D=0.5
10-1K/W
0.2
0.2
10-1K/W
0.1
0.1
R , ( K / W )
t� , ( s ) � �
R , ( K / W )
t� , ( s ) � �
0.05 0.1846 0.110373
0.05
0.1968 0.115504
0.1681 0.015543
0.0733 0.009340
0.1261 0.001239
0.02
0.0509 0.000823
0.0818 0.000120
10-2K/W
0.02
0.0290 0.000119
0.04 0.000008
0.01
R1 R2
0.01
R1 R2
10-2K/W
C1=t�1/R1 C2=t�2/R2
C1=t�1/R1 C2=t�2/R2
single pulse
single pulse
10-3K/W
1�s 10�s 100�s 1ms 10ms 100ms 100ns 1�s 10�s 100�s 1ms 10ms100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal Figure 22. Diode transient thermal
impedance impedance as a function of pulse
(D = tp / T) width
(D=tP/T)
5�C
200ns
TJ=175�C
TJ=175�C
4�C
150ns
3�C
100ns
2�C
TJ=25�C
TJ=25�C
50ns
1�C
0�C
0ns
1000A/�s 1500A/�s
1000A/�s 1500A/�s
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=75A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF =75A,
Dynamic test circuit in Figure E)
9 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
thJC
thJC
Z
,
TRANSIENT THERMAL IMPEDANCE
Z
,
TRANSIENT THERMAL IMPEDANCE
rr
t
,
REVERSE RECOVERY TIME
rr
Q
,
REVERSE RECOVERY CHARGE
IKW75N60T
TRENCHSTOP"! Series q
TJ=175�C -1200A/�s TJ=175�C
60A
-1000A/�s
TJ=25�C
50A
-800A/�s
40A
TJ=25�C
-600A/�s
30A
-400A/�s
20A
-200A/�s
10A
0A/�s
0A
1000A/�s 1500A/�s
1000A/�s 1500A/�s
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 75A, (VR=400V, IF=75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)
200A
TJ=25�C IF=150A
2.0V
175�C
150A
75A
1.5V
37.5A
100A
1.0V
50A
0.5V
0.0V
0A
0�C 50�C 100�C 150�C
0V 1V 2V
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature
10 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
rr
rr
di /dt
,
DIODE PEAK RATE OF FALL
I
,
REVERSE RECOVERY CURRENT
OF REVERSE RECOVERY CURRENT
F
F
I
,
FORWARD CURRENT
V
,
FORWARD VOLTAGE
IKW75N60T
TRENCHSTOP"! Series q
11 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
IKW75N60T
TRENCHSTOP"! Series q
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF tS tF
QS QF 10% Ir r m t
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
t�1 t�2 t�n
r1 r r
2 n
Tj (t)
p(t)
r1 r r
2 n
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
12 Rev. 2.8 2013-12-05
IFAG IPC TD VLS
IKW75N60T
TRENCHSTOP"! Series q
Published by
Infineon Technologies AG
81726 Munich, Germany
� 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
13 Rev. 2.8 2013-12-05
IFAG IPC TD VLS