MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
FS3KM-10 OUTLINE DRAWING Dimensions in mm
10 Ä… 0.3 2.8 Ä… 0.2
Ć 3.2 ą 0.2
1.1 Ä… 0.2
1.1 Ä… 0.2
0.75 Ä… 0.15
0.75 Ä… 0.15
2.54 Ä… 0.25 2.54 Ä… 0.25
123
w
q GATE
w DRAIN
q
Ä„VDSS ................................................................................ 500V e SOURCE
Ä„rDS (ON) (MAX) .................................................................4.4&!
Ä„ID ............................................................................................ 3A e
Ä„Viso ................................................................................ 2000V
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol Parameter Conditions Ratings Unit
VDSS Drain-source voltage VGS = 0V 500 V
VGSS Gate-source voltage VDS = 0V Ä…30 V
ID Drain current 3 A
IDM Drain current (Pulsed) 9 A
PD Maximum power dissipation 30 W
Tch Channel temperature  55 ~ +150 °C
Tstg Storage temperature  55 ~ +150 °C
Viso Isolation voltage AC for 1minute, Terminal to case 2000 Vrms
 Weight Typical value 2.0 g
Feb.1999
3 Ä… 0.3
6.5 Ä… 0.3
3.6 Ä… 0.3
14 Ä… 0.5
15 Ä… 0.3
4.5 Ä… 0.2
2.6 Ä… 0.2
MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 500   V
V (BR) GSS Gate-source breakdown voltage IG = Ä…100µA, VDS = 0V Ä…30   V
IGSS Gate-source leakage current VGS = Ä…25V, VDS = 0V   Ä…10 µA
IDSS Drain-source leakage current VDS = 500V, VGS = 0V   1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 1A, VGS = 10V  3.4 4.4 &!
VDS (ON) Drain-source on-state voltage ID = 1A, VGS = 10V  3.4 4.4 V
ćłyfsćł Forward transfer admittance ID = 1A, VDS = 10V 1.0 1.5  S
Ciss Input capacitance  300  pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz  35  pF
Crss Reverse transfer capacitance  6  pF
td (on) Turn-on delay time  13  ns
tr Rise time  10  ns
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50&!
td (off) Turn-off delay time  30  ns
tf Fall time  30  ns
VSD Source-drain voltage IS = 1A, VGS = 0V  1.5 2.0 V
Rth (ch-c) Thermal resistance Channel to case   4.17 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
50 101
tw=10µs
7
5
3
40
2
100µs
100
7
30
1ms
5
3
2
10ms
20
10 1
7
DC
5
TC = 25°C
10
3 Single Pulse
2
0 10 2
0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 5
PD = 30W
TC = 25°C
PD = 30W
VGS = 20V
Pulse Test
10V
8 4
8V
VGS = 20V
10V
TC = 25°C
8V
6V
6 3
Pulse Test
4 2
6V
5V
2 1
5V
0 0
0 10 20 30 40 50 0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
DRAIN CURRENT
I
D
(A)
POWER DISSIPATION
P
D
(W)
DRAIN CURRENT
I
D
(A)
DRAIN CURRENT
I
D
(A)
MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.
GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
40 10
TC = 25°C
TC = 25°C
Pulse Test
Pulse Test
VGS = 10V
32 8
24 6
ID = 4A
20V
16 4
3A
2A
8 2
1A
0
0
0 4 8 12 16 20 10 2 2 3 5710 1 2 3 5 7 100 2 3 5 7 101
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
10 101
VDS = 10V
7
TC = 25°C
Pulse Test
VDS = 50V 5
8
Pulse Test
3
TC = 25°C
2
6
100
7
75°C
4
5 125°C
3
2
2
0 10 1
0 4 8 12 16 20 10 1 2 3 5 7 100 2 3 5 7 101
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
7 5
5 Tch = 25°C
Ciss
VDD = 200V
3
3
tf
VGS = 10V
2
2
RGEN = RGS = 50&!
102
102
7
7
5
td(off)
5
Coss
3
2
3
2
101
td(on)
7
Tch = 25°C
Crss
5 101 tr
f = 1MHz
VGS = 0V 7
3
5
2
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 10 1 2 3 5 7 100 2 3 5 7 101
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)
Feb.1999
VOLTAGE
V
DS (ON)
(V)
RESISTANCE
r
DS (ON)
(
&!
)
DRAIN-SOURCE ON-STATE
DRAIN-SOURCE ON-STATE
ADMITTANCE
ïÅ‚
y
fs
śł
(S)
FORWARD TRANSFER
DRAIN CURRENT
I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME
(ns)
MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE
VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 10
TC = 125°C
Tch = 25°C VGS = 0V
ID = 3A Pulse Test
16 8
VDS = 100V
25°C
200V
12 6
400V
75°C
8 4
4 2
0 0
0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0
GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE CHANNEL TEMPERATURE
(TYPICAL) (TYPICAL)
101 5.0
7 VGS = 10V VDS = 10V
ID = 1/2ID ID = 1mA
5
Pulse Test
4.0
3
2
3.0
100
7
2.0
5
3
1.0
2
10 1
0
 50 0 50 100 150  50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE
(TYPICAL) CHARACTERISTICS
1.4 101
7
VGS = 0V
D=1
5
ID = 1mA
3 0.5
1.2
2
0.2
100
0.1
7
1.0
5
0.05
3
PDM
2 0.02
0.8
0.01
10 1
tw
Single Pulse
7
T
5
0.6
D= tw
3
T
2
0.4 10 2
 50 0 50 100 150 10 423 5710 323 5710 223 5710 123 57100 23 57101 23 57102
CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)
Feb.1999
SOURCE CURRENT
I
S
(A)
GATE-SOURCE VOLTAGE
V
GS
(V)
VOLTAGE
V
GS (th)
(V)
GATE-SOURCE THRESHOLD
DRAIN-SOURCE ON-STATE RESISTANCE
r
DS (ON)
(t°C)
DRAIN-SOURCE ON-STATE RESISTANCE
r
DS (ON)
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
V
BR (DSS)
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
V
BR (DSS)
(25°C)
TRANSIENT THERMAL IMPEDANCE
Z
th
(ch c)
(°C/W)