MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING Dimensions in mm
FS3KM-18A
10 Ä… 0.3 2.8 Ä… 0.2
Ć 3.2 ą 0.2
1.1 Ä… 0.2
1.1 Ä… 0.2
0.75 Ä… 0.15
0.75 Ä… 0.15
2.54 Ä… 0.25 2.54 Ä… 0.25
123
w
q GATE
w DRAIN
q
e SOURCE
Ä„VDSS ................................................................................900V
Ä„rDS (ON) (MAX) ................................................................ 4.0&!
e
Ä„ID ............................................................................................3A
Ä„Viso ................................................................................ 2000V
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol Parameter Conditions Ratings Unit
VDSS Drain-source voltage VGS = 0V 900 V
VGSS Gate-source voltage VDS = 0V Ä…30 V
ID Drain current 3 A
IDM Drain current (Pulsed) 9 A
PD Maximum power dissipation 30 W
Tch Channel temperature  55 ~ +150 °C
Tstg Storage temperature  55 ~ +150 °C
Viso Isolation voltage AC for 1minute, Terminal to case 2000 Vrms
 Weight Typical value 2 g
Feb.1999
3 Ä… 0.3
6.5 Ä… 0.3
3.6 Ä… 0.3
14 Ä… 0.5
15 Ä… 0.3
4.5 Ä… 0.2
2.6 Ä… 0.2
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 900   V
V (BR) GSS Gate-source breakdown voltage IGS = Ä…100µA, VDS = 0V Ä…30   V
IGSS Gate-source leakage current VGS = Ä…25V, VDS = 0V   Ä…10 µA
IDSS Drain-source leakage current VDS = 900V, VGS = 0V   1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 1.5A, VGS = 10V  3.08 4.00 &!
VDS (ON) Drain-source on-state voltage ID = 1.5A, VGS = 10V  4.62 6.00 V
ćłyfsćł Forward transfer admittance ID = 1.5A, VDS = 10V 2.1 3.5  S
Ciss Input capacitance  770  pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz  77  pF
Crss Reverse transfer capacitance  13  pF
td (on) Turn-on delay time  15  ns
tr Rise time VDD = 200V, ID = 1.5A, VGS = 10V,  15  ns
td (off) Turn-off delay time RGEN = RGS = 50&!  90  ns
tf Fall time  25  ns
VSD Source-drain voltage IS = 1.5A, VGS = 0V  1.0 1.5 V
Rth (ch-c) Thermal resistance Channel to case   4.17 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
50 101
tw = 10ms
7
5
3
100ms
40
2
100
1ms
7
30
5
3
10ms
2
20
100ms
10 1
7
5
10
DC
3
TC = 25°C
2
Single Pulse
0 10 2
0 50 100 150 200 100 2 3 5 7101 2 3 5 7102 2 3 5 7103
CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
VGS = 20V 10V
@
10 2.0
5V
PD = 30W VGS = 20V PD = 30W
10V
8 1.6
TC = 25°C
Pulse Test 4.5V
6 1.2
5V
TC = 25°C
4 0.8
Pulse Test
2 0.4
4V
4V
0 0
0 10 20 30 40 50 0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
DRAIN CURRENT
I
D
(A)
POWER DISSIPATION
P
D
(W)
DRAIN CURRENT
I
D
(A)
DRAIN CURRENT
I
D
(A)
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.
GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
50 10
TC = 25°C
TC = 25°C
Pulse Test
Pulse Test
40 8
30 6
VGS = 10V
ID = 6A 20V
20 4
3A
10 2
1A
0
0
0 4 8 12 16 20 10 1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
10 101
TC = 25°C
7
VDS = 50V
5
Pulse Test
8
TC = 25°C
3
75°C
2
6 125°C
100
7
4
5
VDS = 10V
3
2 Pulse Test
2
0 10 1
0 4 8 12 16 20 10 1 2 3 5 7 100 2 3 5 7 101
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
3 103
Tch = 25°C
2
7
VDD = 200V
Ciss
5
103 VGS = 10V
7
RGEN = RGS = 50&!
5
3
3
2
2
102
102
td(off)
7
Coss
7
5
5
3
2
3
tf
101 Tch = 25°C Crss
2 tr
7
f = 1MHZ
td(on)
5
VGS = 0V
3 101
2 3 5 7100 2 3 5 7101 2 3 5 7102 2 10 1 2 3 5 7 100 2 3 5 7 101
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)
Feb.1999
VOLTAGE
V
DS (ON)
(V)
RESISTANCE
r
DS (ON)
(
&!
)
DRAIN-SOURCE ON-STATE
DRAIN-SOURCE ON-STATE
ADMITTANCE
ïÅ‚
y
fs
śł
(S)
FORWARD TRANSFER
DRAIN CURRENT
I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME
(ns)
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE
VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 10
Tch = 25°C VGS = 0V
ID = 5A Pulse Test
16 8
TC = 125°C
12 6
75°C
VDS = 250V
400V
25°C
600V
8 4
4 2
0 0
0 10 20 30 40 50 0 0.8 1.6 2.4 3.2 4.0
GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE CHANNEL TEMPERATURE
(TYPICAL) (TYPICAL)
101 5.0
VGS = 10V VDS = 10V
7
ID = 1/2ID ID = 1mA
5
Pulse Test
4.0
3
2
3.0
100
7
2.0
5
3
1.0
2
10 1 0
 50 0 50 100 150  50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE
(TYPICAL) CHARACTERISTICS
1.4 101
VGS = 0V
7
D = 1.0
ID = 1mA 5
3
0.5
1.2
2
0.2
100
7
1.0 0.1
5
3
PDM
2
0.8
0.05
10 1 tw
0.02
7
T
0.01
5
0.6
Single Pulse
D= tw
3
T
2
0.4 10 2
 50 0 50 100 150 10 423 5710 323 5710 223 5710 123 57100 23 57101 23 57102
CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)
Feb.1999
SOURCE CURRENT
I
S
(A)
GATE-SOURCE VOLTAGE
V
GS
(V)
VOLTAGE
V
GS (th)
(V)
GATE-SOURCE THRESHOLD
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
DRAIN-SOURCE ON-STATE RESISTANCE
r
DS (ON)
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
V
(BR) DSS
(t°C)
TRANSIENT THERMAL IMPEDANCE
Z
th
(ch c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE
V
(BR) DSS
(25°C)
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