Łł
Z01xxxA
SENSITIVE GATE TRIACS
FEATURES
I =0.8A
T(RMS)
VDRM = 400V to 800V
IGT d" 3mA to d" 25mA
A1
G
A2
DESCRIPTION
The Z01xxxA series of triacs uses a high
performance TOP GLASS PNPN technology.
TO92
These parts are intended for general purpose
(Plastic)
applications where gate high sensitivity is
required.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I RMS on-state current Tl= 70 �C 0.8 A
T(RMS)
(360� conduction angle)
I Non repetitive surge peak on-state current tp = 8.3 ms 8.5 A
TSM
(Tj initial = 25�C)
tp = 10 ms 8
I2t I2t Value for fusing tp = 10 ms 0.32 A2s
dI/dt Critical rate of rise of on-state current Repetitive 10 A/�s
I =50mA di /dt = 0.1 A/�s. F = 50 Hz
G G
Non 50
Repetitive
T Storage and operating junction temperature range - 40, + 150 �C
stg
T - 40, + 125
j
Tl Maximum lead temperature for soldering during 10s at 260 �C
2mm from case
Voltage
Symbol Parameter Unit
D M S N
V Repetitive peak off-state voltage 400 600 700 800 V
DRM
V T = 125�C
RRM j
January 1995 1/5
Z01xxxA
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient 150 �C/W
Rth(j-l) Junction to leads for D.C 80 �C/W
Rth(j-l) Junction to leads for A.C 360�conduction angle (F=50Hz) 60 �C/W
GATE CHARACTERISTICS (maximum values)
P = 0.1 W P = 2 W (tp = 20 �s) I = 1 A (tp = 20 �s)
G (AV) GM GM
ELECTRICAL CHARACTERISTICS
Sensitivity
Symbol Test Conditions Quadrant Unit
03 07 09 10
IGT VD=12V (DC) RL=140&! Tj= 25�C I-II-III MAX 3 5 10 25 mA
IV MAX 5 7 10 25
V V =12V (DC) R =140&! Tj= 25�C I-II-III-IV MAX 1.5 V
GT D L
V V =V R =3.3k&! Tj= 125�C I-II-III-IV MIN 0.2 V
GD D DRM L
tgt V =V I = 40mA Tj= 25�C I-II-III-IV TYP 2 �s
D DRM G
I =1.1A
T
dIG/dt = 0.5A/�s
I * I = 50 mA Gate open Tj= 25�C MAX 7 10 10 25 mA
H T
I I = 1.2 I Tj= 25�C I-III-IV TYP 7 10 10 25 mA
L G GT
II TYP 14 20 20 50
VTM* ITM= 1.1A tp= 380�s Tj= 25�C MAX 1.5 V
I V =V Tj= 25�C MAX 10 �A
DRM D DRM
I V =V
RRM R RRM
Tj= 110�C MAX 200
dV/dt * VD=67%VDRM Tj= 110�C MIN 10 20 50 100 V/�s
Gate open
TYP 20 50 150 400
(dV/dt)c * (dI/dt)c = 0.35 A/ms Tj= 110�C MIN 2 5 V/�s
TYP 1 1
* For either polarity of electrode A voltage with reference to electrode A
2 1
ORDERING INFORMATION
Z 01 07 M A
PACKAGE :
TRIAC TOP GLASS
A = TO92
CURRENT VOLTAGE
SENSITIVITY
2/5
Łł
Z01xxxA
Fig.1 : Maximum RMS power dissipation versus Fig.2 : Correlation between maximum RMS power
RMS on-state current. dissipation and maximum allowable temperature
(Tamb and Tlead).
Tlead (oC)
P(W) P (W)
1-65
1
Rth(j-l)
180O
o
Rth(j-a)
= 180
-75
0.8
0.8
o
= 120
-85
o
0.6
0.6
= 90
o
-95
= 60
0.4 0.4
-105
= 30o
0.2 0.2
-115
I (A)
T(RMS)
Tamb (oC)
0 0 -125
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 20 40 60 80 100 120 140
Fig.3 : RMSon-state current versus case tempera- Fig.4 : Relative variation of thermal impedance
ture. junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
IT(RMS)(A)
1.00
1
0.8
0.6
= 180o
0.10
0.4
0.2
Tlead(o C)
tp(s)
0.01
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current
holding current versus junction temperature. versus number of cycles.
Igt[Tj] Ih[Tj]
ITSM(A)
o o
Igt[Tj=25 C] Ih[Tj=25 C]
7
2.6
Tj initial = 25oC
2.4
6
2.2
5
2.0
1.8 Igt
4
1.6
1.4
3
Ih
1.2
2
1.0
0.8
1
0.6 Number of cycles
Tj(oC)
0.4 0
-40 -20 0 20 40 60 80 100 120 140 1 10 100 1000
3/5
Łł
Z01xxxA
Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-statecharacteristics (maximum values).
for a sinusoidal pulse with width : tp d" 10ms, and
corresponding value of I2t.
I (A). I2t (A2s) I (A)
TSM TM
100 10
Tj initial = 25oC
Tj initial
25oC
10
ITSM
1
Tj max
Tj max
1
Vto =0.95V
I2t
Rt =0.420
VTM(V)
tp(ms)
0.1 0.1
110 0 0.5 1 1.5 2 2.5 3 3.5 4
4/5
Łł
Z01xxxA
PACKAGE MECHANICAL DATA
TO92 (Plastic)
DIMENSIONS
REF. Millimeters Inches
A
Typ. Min. Max. Typ. Min.
Max.
a
A 1.35 0.053
B 4.7 0.185
B C
C 2.54 0.100
D 4.4 4.8 0.173 0.189
F D E
E 12.7 0.500
F 3.7 0.146
a 0.45 0.017
Marking : type number
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
� 1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
Łł