2N3819
Vishay Siliconix
N-Channel JFET
PRODUCT SUMMARY
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
v  8  25 2 2
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer
Gps 11 dB @ 400 MHz
D Very High System Sensitivity D Oscillator
D Very Low Noise: 3 dB @ 400 MHz
D High Quality of Amplification D Sample-and-Hold
D Very Low Distortion
D High-Speed Switching Capability D Very Low Capacitance Switches
D High ac/dc Switch Off-Isolation
D High Low-Level Signal Amplification
D High Gain: AV = 60 @ 100 mA
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good Its TO-226AA (TO-92) package is compatible with various
performance at mid-to-high frequencies. It features low noise tape-and-reel options for automated assembly (see
and leakage and guarantees high gain at 100 MHz. Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
TO-226AA
(TO-92)
1
S
G
2
D
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25 V Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  55 to 150_C
Notes
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .  55 to 150_C a. Derate 2.8 mW/_C above 25_C
Document Number: 70238
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S 04028 Rev. D ,04-Jun-01
7-1
2N3819
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG =  1 mA , VDS = 0 V  25  35
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 2 nA  3
 8
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 2 10 20 mA
VGS =  15 V, VDS = 0 V  0.002  2 nA
Gate Reverse Current IGSS
TA = 100_C  0.002  2 mA
Gate Operating Currentc IG VDG = 10 V, ID = 1 mA  20
pA
Drain Cutoff Current ID(off) VDS = 10 V, VGS =  8 V 2
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 150 W
Gate-Source Voltage VGS VDS = 15 V, ID = 200 mA  0.5  2.5  7.5
V
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7
Dynamic
f = 1 kHz 2 5.5 6.5
Common-Source Forward Transconductancec gfs mS
VDS = 15 V
f = 100 MHz 1.6 5.5
V = 0 V
VGS = 0 V
Common-Source Output Conductancec gos f = 1 kHz 25 50 mS
Common-Source Input Capacitance Ciss 2.2 8
VDS = 15 V, VGS = 0 V, f = 1 MHz pF
Common-Source Reverse Transfer Capacitance Crss 0.7 4
nVD
Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 100 Hz 6
"Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms, duty cycle v2%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
vs. Gate-Source Cutoff Voltage
20 10
500 100
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
IDSS
f = 1 kHz
8 80
16 400
rDS
12 gfs 6 60
300
gos
4 40
8 200
IDSS @ VDS = 15 V, VGS = 0 V
4 100
2 20
gfs @ VDS = 15 V, VGS = 0 V
f = 1 kHz
0
0 0
0
0  2  4  6  8  10
0  2  4  6  8  10
VGS(off)  Gate-Source Cutoff Voltage (V) VGS(off)  Gate-Source Cutoff Voltage (V)
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S 04028 Rev. D ,04-Jun-01
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g  Forward Transconductance (mS)
fs
gos  Output Conductance (mS)
DSS
I
 Saturation Drain Current (mA)
DS(on)
r
 Drain-Source On-Resistance (
&! )
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Forward Transconductance
vs. Drain Current
Gate Leakage Current
100 nA
10
5 mA
VGS(off) =  3 V VDS = 10 V
f = 1 kHz
1 mA
10 nA
8
0.1 mA
1 nA
TA = 125_C
TA =  55_C
6
IGSS @
100 pA 25_C
125_C
5 mA
4
1 mA
10 pA
125_C
0.1 mA
TA = 25_C
2
1 pA
IGSS @ 25_C
0.1 pA 0
010 20
0.1 1 10
VDG  Drain-Gate Voltage (V) ID  Drain Current (mA)
Output Characteristics Output Characteristics
10 15
VGS(off) =  2 V VGS(off) =  3 V
8 12
VGS = 0 V VGS = 0 V
6 9  0.3 V
 0.2 V
 0.6 V
 0.4 V
 0.9 V
4 6
 0.6 V
 1.2 V
 0.8 V
 1.5 V
 1.0 V
2 3
 1.2 V
 1.8 V
 1.4 V
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)
Transfer Characteristics Transfer Characteristics
10 10
VGS(off) =  2 V VDS = 10 V VGS(off) =  3 V VDS = 10 V
8 8
TA =  55_C
TA =  55_C
25_C
6 25_C 6
125_C
125_C
4 4
2 2
0 0
0  0.4  0.8  1.2  1.6  20  0.6  1.2  1.8  2.4  3
VGS  Gate-Source Voltage (V) VGS  Gate-Source Voltage (V)
Document Number: 70238
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S 04028 Rev. D ,04-Jun-01
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G
I  Gate Leakage
fs
g  Forward Transconductance (mS)
D
D
I
 Drain Current (mA)
I
 Drain Current (mA)
D
D
I
 Drain Current (mA)
I
 Drain Current (mA)
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltgage
10 10
VGS(off) =  2 V VDS = 10 V VGS(off) =  3 V VDS = 10 V
f = 1 kHz f = 1 kHz
8 8
TA =  55_C
TA =  55_C
6 6
25_C 25_C
4 4
125_C
125_C
2 2
0 0
0  0.4  0.8  1.2  1.6  2
0  0.6  1.2  1.8  2.4  3
VGS  Gate-Source Voltage (V) VGS  Gate-Source Voltage (V)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
100
300
TA =  55_C gfs RL
AV +
1 ) RLgos
240 80
Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) =  2 V
RL +
ID
180 60
 3 V
VGS(off) =  2 V
120 40
60 20
 3 V
0 0
0.1 1 10 0.1 1 10
ID  Drain Current (mA) ID  Drain Current (mA)
Common-Source Input Capacitance Common-Source Reverse Feedback
vs. Gate-Source Voltage Capacitance vs. Gate-Source Voltage
5 3.0
f = 1 MHz f = 1 MHz
4 2.4
VDS = 0 V
3 1.8
VDS = 0 V
2 1.2
VDS = 10 V
VDS = 10 V
1 0.6
0 0
0  20
0  4  8  12  16  20  4  8  12  16
VGS  Gate-Source Voltage (V) VGS  Gate-Source Voltage (V)
Document Number: 70238
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S 04028 Rev. D ,04-Jun-01
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fs
g  Forward Transconductance (mS)
fs
g  Forward Transconductance (mS)
V
A  Voltage Gain
DS(on)
r
 Drain-Source On-Resistance (
&! )
iss
C
 Input Capacitance (pF)
rss
C
 Reverse Feedback Capacitance (pF)
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Input Admittance Forward Admittance
100 100
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
VGS = 0 V VGS = 0 V
Common Source Common Source
bis
10 10
gfs
gis
 bis
1 1
0.1 0.1
100 200 500 1000 100 200 500 1000
f  Frequency (MHz) f  Frequency (MHz)
Reverse Admittance Output Admittance
10
10
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
bos
VGS = 0 V VGS = 0 V
 brs
Common Source Common Source
1
1
gos
 grs
0.1
0.1
0.01
0.01
100 200 500 1000 100 200 500 1000
f  Frequency (MHz) f  Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20
20
VGS(off) =  3 V VDS = 10 V VGS(off) =  3 V VDS = 10 V
f = 1 kHz
16 16
TA =  55_C
12 12
25_C
8 8
125_C
ID = 5 mA
4 4
ID = IDSS
0
0
10 100 1 k 10 k 100 k 0.1 1 10
f  Frequency (Hz) ID  Drain Current (mA)
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S 04028 Rev. D ,04-Jun-01
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(mS)
(mS)
(mS)
(mS)
os
en  Noise Voltage nV /
Hz
g
 Output Conductance (mS)