2N3819
Siliconix
N Channel JFETs
Product Summary
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
v -8 -25 2 2
Features Benefits Applications
D Excellent High Frequency Gain: D Wideband High Gain D High Frequency Amplifier/Mixer
Gps 11 dB @ 400 MHz
D Very High System Sensitivity D Oscillator
D Very Low Noise: 3 dB @ 400 MHz
D High Quality of Amplification D Sample and Hold
D Very Low Distortion
D High Speed Switching Capability D Very Low Capacitance Switches
D High ac/dc Switch Off Isolation
D High Low Level Signal Amplification
D High Gain: AV = 60 @ 100 mA
Description
The 2N3819 is a low cost, all purpose JFET which offers Its TO 226AA (TO 92) package is compatible with
good performance at mid to high frequencies. It various tape and reel options for automated assembly
features low noise and leakage and guarantees high gain (see Packaging Information). For similar products in
at 100 MHz. TO 206AF (TO 72) and TO 236 (SOT 23) packages,
see the 2N4416/2N4416A/SST4416 data sheet.
TO 226AA
(TO 92)
1
S
G 2
D
3
Top View
Absolute Maximum Ratings
Gate Source/Gate Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . -25 V Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Notes
Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C a. Derate 2.8 mW/_C above 25_C
P-37407 Rev. B (07/04/94)
1
2N3819
Siliconix
Specificationsa
Limits
Parameter Symbol Test Conditions Min Typb Max Unit
Static
Gate Source Breakdown Voltage V(BR)GSS IG = -1 mA , VDS = 0 V -25 -35
V
V
Gate Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 2 nA -3 -8

Saturation Drain Currentc IDSS VDS = 15 V, VGS = 0 V 2 10 mA
20
VGS = -15 V, VDS = 0 V -0.002 -2 nA
Gate Reverse Current IGSS
Gate Reverse Current IGSS
TA = 100_C -0.002 -2 mA
Gate Operating Currentd IG VDG = 10 V, ID = 1 mA -20
pA
pA
Drain Cutoff Current ID(off) VDS = 10 V, VGS = -8 V 2
Drain Source On Resistance rDS(on) VGS = 0 V, ID = 1 mA 150 W
Gate Source Voltage VGS VDS = 15 V, ID = 200 mA -0.5 -2.5 -7.5
V
V
Gate Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7
Dynamic
f = 1 kHz 5.5 6.5
2
Common Source Forward Transconductanced gfs mS
Common Source Forward Transconductanced gfs mS
VDS = 15 V, VGS = 0 V f = 100 MHz 1.6 5.5
V 15 V V 0 V
Common Source Output Conductanced gos f = 1 kHz 15 50 mS
Common Source Input Capacitance Ciss 2.2 8
VDS = 15 V VGS = 0Vf = 1 MHz pF
VDS = 15 V, VGS = 0 V, f = 1 MHz pF
Common Source Reverse Transfer Capacitance Crss 0. 7 4
nVD
Equivalent Input Noise Voltaged en VDS = 10 V, VGS = 0 V, f = 100 Hz 6
"Hz
Notes
a. TA = 25_C unless otherwise noted. NH
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v300 ms, duty cycle v2%.
d. This parameter not registered with JEDEC.
Typical Characteristics
Drain Current and Transconductance
On Resistance and Output Conductance
vs. Gate Source Cutoff Voltage
vs. Gate Source Cutoff Voltage
20 10
500 50
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
IDSS
f = 1 kHz
8 40
16 400
rDS
6 30
12 gfs 300
gos
4 20
8 200
IDSS @ VDS = 15 V, VGS = 0 V
4 100
2 10
gfs @ VDS = 15 V, VGS = 0 V
f = 1 kHz
0
0 0
0
0 -2 -4 -6 -8 -10
0 -2 -4 -6 -8 -10
VGS(off) - Gate Source Cutoff Voltage (V) VGS(off) - Gate Source Cutoff Voltage (V)
P-37407 Rev. B (07/04/94)
2
g
- Forward Transconductance (mS)
fs
g
- Output Conductance (mS)
os
DSS
I
- Saturation Drain Current (mA)
DS(on)
r
- Drain Source On Resistance (W )
2N3819
Siliconix
Typical Characteristics (Cont'd)
Common Source Forward Transconductance
Gate Leakage Current vs. Drain Current
100 nA
10
5 mA
VGS(off) = -3 V VDS = 10 V
1 mA f = 1 kHz
10 nA
8
0.1 mA
1 nA
TA = 125_C
TA = -55_C
6
IGSS
100 pA 25_C
@
5 mA
125_C
4
1 mA
10 pA
125_C
0.1 mA
TA = 25_C
2
1 pA
IGSS @ 25_C
0.1 pA 0
010 20
0.1 1 10
VDG - Drain Gate Voltage (V) ID - Drain Current (mA)
Output Characteristics Output Characteristics
10 15
VGS(off) = -2 V VGS(off) = -3 V
8 12
VGS = 0 V
VGS = 0 V
6 9
-0.3 V
-0.2 V
-0.6 V
-0.4 V
-0.9 V
4 6
-0.6 V
-1.2 V
-0.8 V
-1.5 V
-1.0 V
2 3
-1.2 V
-1.8 V
-1.4 V
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain Source Voltage (V) VDS - Drain Source Voltage (V)
Transfer Characteristics Transfer Characteristics
10 10
VGS(off) = -2 V VDS = 10 V VGS(off) = -3 V VDS = 10 V
8 8
TA = -55_C
TA = -55_C
25_C
6 6
25_C
125_C
125_C
4 4
2 2
0 0
0 -0.4 -0.8 -1.2 -1.6 -2 0 -0.6 -1.2 -1.8 -2.4 -3
VGS - Gate Source Voltage (V) VGS - Gate Source Voltage (V)
P-37407 Rev. B (07/04/94)
3
G
I
- Gate Leakage
fs
g
- Forward Transconductance (mS)
D
D
I
- Drain Current (mA)
I
- Drain Current (mA)
D
D
I
- Drain Current (mA)
I
- Drain Current (mA)
2N3819
Siliconix
Typical Characteristics (Cont'd)
Transconductance vs. Gate Source Voltage Transconductance vs. Gate Source Voltgage
10 10
VGS(off) = -2 V VDS = 10 V VGS(off) = -3 V VDS = 10 V
f = 1 kHz f = 1 kHz
8 8
TA = -55_C
TA = -55_C
6 6
25_C 25_C
4 4
125_C
125_C
2 2
0 0
0 -0.4 -0.8 -1.2 -1.6 -2
0 -0.6 -1.2 -1.8 -2.4 -3
VGS - Gate Source Voltage (V) VGS - Gate Source Voltage (V)
On Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
100
300
gfs RL
TA = -55_C
AV +
1 ) RLgos
240 80
Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) = -2 V
RL +
ID
180 60
-3 V
VGS(off) = -2 V
120 40
60 20
-3 V
0 0
0.1 1 10 0.1 1 10
ID - Drain Current (mA) ID - Drain Current (mA)
Common Source Input Capacitance Common Source Reverse Feedback
vs. Gate Source Voltage Capacitance vs. Gate Source Voltage
5 3.0
f = 1 MHz f = 1 MHz
4 2.4
VDS = 0 V
3 1.8
VDS = 0 V
2 1.2
VDS = 10 V
VDS = 10 V
1 0.6
0 0
0 -20
0 -4 -8 -12 -16 -20 -4 -8 -12 -16
VGS - Gate Source Voltage (V) VGS - Gate Source Voltage (V)
P-37407 Rev. B (07/04/94)
4
fs
fs
g
- Forward Transconductance (mS)
g
- Forward Transconductance (mS)
V
A
- Voltage Gain
DS(on)
r
- Drain Source On Resistance (W )
iss
C
- Input Capacitance (pF)
rss
C
- Reverse Feedback Capacitance (pF)
2N3819
Siliconix
Typical Characteristics (Cont'd)
Input Admittance Forward Admittance
100 100
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
VGS = 0 V VGS = 0 V
Common Source bis Common Source
10 10
gfs
gis
-bis
1 1
0.1 0.1
100 200 500 1000 100 200 500 1000
f - Frequency (MHz) f - Frequency (MHz)
Reverse Admittance Output Admittance
10
10
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
bos
VGS = 0 V VGS = 0 V
-brs
Common Source Common Source
1
1
gos
-grs
0.1
0.1
0.01
0.01
100 200 500 1000 100 200 500 1000
f - Frequency (MHz) f - Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20
20
VGS(off) = -3 V VDS = 10 V VGS(off) = -3 V VDS = 10 V
f = 1 kHz
16 16
TA = -55_C
12 12
25_C
8 8
125_C
ID = 5 mA
4 4
ID = IDSS
0
0
10 100 1 k 10 k 100 k 0.1 1 10
f - Frequency (Hz) ID - Drain Current (mA)
P-37407 Rev. B (07/04/94)
5
(mS)
(mS)
(mS)
(mS)
"
n
e - Noise Voltage
(
nV
D
Hz
)
fs
g
- Forward Transconductance (mS)