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i.O A, 100V, 0.6 Ohm, P-Channe/ Power MOSFET
TM* advanood powcr MOSFET is dosigncd. tcslcd. and guararuccd u> wifftsiand a spećfied fovel of anergy In lho brcokdown mratoncłio moda oł operniion. Thcso ara P-Channcl enbaneamonl modo aficon galo powor field offod t/ansistore dcslgned for appCcations sucti as swilchlng regulatora. swAcMng convcrtors. motor drhmrs. relay drivers and drivwa for Wflfi powcr bipoUr swilchlng transistors roquHng high spoćd and Iow gala driwa powor. These typaa can ba operatod dirceUy (mm integratod droułts.
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par ESO Handtng Pisadgra ■ or407.727-9207 | CapyrigM O Mil Corporation 1SM
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Vcs. 6ATE TO SOURCE YOLTAGE (V)
FIGURĘ Ł SATURATION CHARACTERIST1CS
FIGURĘ Ł TRANSFER CHARACTER1STICS
s
S
B
S
§
u
-i
_f . V— »-10V |
FUL OUT |
ŚeOURATIO Y CYCLG•C |
MX0ua LS«UAX | |
r |
V«*--dV | |||
r | ||||
ve,—sv | ||||
s |
Vo«--*v |
FIGURĘ 4. OUTPUT CHARACTEłUSTICS
FIGURĘ X. FORMARD MAS SAFE OPERATIMG AREA
Absoluto Majclmum Rallngs Tc • 2S°C. Uniou oaienMae spodfed
vos |
IRFDI120 •100 |
UNITO V |
vOGR |
•100 |
V |
•o |
-10 |
A |
>OM |
•0.0 |
A |
• voa |
120 |
V |
Po |
IJ |
W |
0.000 |
vw°c | |
• •. ■ ®as |
STO |
mj |
Tjl t3TQ |
•99 to 150 | |
.....tł |
300 |
•c |
SCO |
•c |
Oraln to Source Breakdown VbHaga (Nolo 1)...........................
Drain lo Gafa Ybttsgo (Rgs •! a*flj (Nofa 1)............................
Continuom Draki Currcnl...........................................
Puli od Draki Currcnl (Hole 3)........................................
Galo lo Source Vottago.............................................
Maikowi Power DiulpaSon (Figuro 1).................................
Uftoar Dora ling Factor (Figuro t)......................................
Single Pub* Auaianche Energy RaCng (Nolo 4)............................
Ope/aling and Slorogo Tempera lute...................................
Maalmum Temperaturę lor Sddetlng
Leeds ol 0.063<n (t.Cmm) Irom Ces* lor 10*...........................
Padage Body lor tOs, Sao Todibrltl SM.............................
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NOTĘ
I. Tj»2S^:to12S^a
Electrlcal Spoclficatlons Tc ■ 2S°C. Unloos Olherwto# SpedCed
PARAMETER |
SYMBOL |
TEST CONOITIONS |
MIN |
TYP |
MAX |
UNITS | |
(Kata to Soieco Braakdowrł Vo0ago |
®Vbss |
Iq ■ •SSOiiA. Vcg ■ 0V. (Figue 0) |
•100 |
• |
V | ||
Galo to Thraahoid Vo0ago |
VCSfTM) |
Vcs-Vos.k>--tt0MA |
-2 |
•4 |
V | ||
Zora Galo Vqlteg* Drain Cunonl |
<oss |
Vbś • RMed BVoss> VGS |
• 0V |
-29 |
|8 | ||
Vos - 0 J ■ Ratod BV0SS. Sfgjg • 0V. Tc » 12S°C |
•290 | ||||||
On-SUU Draki Curroni (Noto 3} |
'om |
Vd8 * ItKÓNł* fOS(ON) MAK. Vcs ■ -I0V |
-1.0 |
! • |
A | ||
Gale to Saurea Loakage Cunonl |
>GSS |
^•izoy |
1300 |
oA | |||
Oraln to Sourc* On Reehlance (Nele 2) |
•DStON) |
lo ■ -0.6A.Vos • *10V. (Figura* 7.0) |
OJ |
OJ |
Q | ||
Forward Transeondudance (Noto 2} |
Oto |
Vos * lo • -0JA (Figura 11) |
OJ |
U |
* |
S | |
Tum-On Delay Ten# |
«<K0N) |
Vqo * 0 5 * Ratod BV(jaS« *0 • *MA. |
25 |
90 |
na | ||
Rh* Time |
V |
Kg ■ B.1U. »CS •)«% lrl Rł_»80QtorV0O«-S0V MOSFET S-Oddng Tknę* |
gum |
90 |
100 |
ne | |
Tum-Ofl Delay ranę |
v*om |
»r* Eucnlialfy Indepen- |
90 |
100 |
ae | ||
Fal Time |
H |
denl ot Operakng Temperalura |
90 |
100 |
na | ||
Tefal Gale Charge (Gala to Sourc* • Goto to Draki) |
0*101) |
Vcs ■ -tOV, lo ■ -1 0A. Vqj ■ 0.0 a Ratod BVPSg (Figura* 13.10.10) |
16 |
20 |
nC | ||
Gal* to Sourc* Charge |
Gale Charge li Easenlłaly Independent ofOperaOng Temoeraiur* |
• |
nC | ||||
Gale to Draki‘MOer* Charge |
_ <* |
7 |
nC | ||||
inputCspec&anc* |
Ctss |
Vos ■ -25V, Vqs ■ 0V. 1 ■ IUHł (Figura 10) |
300 |
i | |||
Oulput CtpecOanc* |
Pass |
200 |
• ■ |
pF | |||
Rawie Transfer CapadUnce |
Crso |
90 |
•» |
pF | |||
Intomal Draki Indudanc* |
to |
Meercead Fram Ihe Draki Lead. 2 Omm (O.OOin) From Header to Centor of Oto |
ModKed MOSFET Symbol Shaalng Oie to-tomal D*vica* Induetaneeo |
4.0 |
ad |
aH | |
(niemal Gabro* Inductonc* |
u |
Measurad From tw Sourc* Laad. 2 Onwn (0 00ln) From Heedar to Sourc* Bondkig Pad |
OJ |
oM | |||
Thermel Reth lanca JuncBon lo Ambtonl |
«#JA |
Typteal Eocfcet Mount |
• |
120 |
^CM |