1998. 10. 8

1/3

SEMICONDUCTOR

TECHNICAL DATA

BC556/7/8

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 3

GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .

FEATURES

ᴌFor Complementary With NPN Type BC546/547/548.

MAXIMUM RATING (Ta=25ᴱ)

TO-92

DIM

MILLIMETERS

A
B
C
D

F

G
H

J

K

L

4.70 MAX
4.80 MAX
3.70 MAX

0.45
1.00
1.27
0.85
0.45

14.00 0.50

0.55 MAX

2.30

D

1 2

3

B

A

J

K

G

H

F

F

L

E

C

E

C

M

N

0.45 MAX

M

1.00

N

1. COLLECTOR
2. BASE
3. EMITTER

+_

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base
Voltage

BC556

V

CBO

-80

V

BC557

-50

BC558

-30

Collector-Emitter
Voltage

BC556

V

CEO

-65

V

BC557

-45

BC558

-30

Emitter-Base
Voltage

BC556

V

EBO

-5

V

BC557

-5

BC558

-5

Collector Current

BC556

I

C

-100

mA

BC557

-100

BC558

-100

Emitter Current

BC556

I

E

100

mA

BC557

100

BC558

100

Collector Power Dissipation

P

C

625

mW

Junction Temperature

T

j

150

ᴱ

Storage Temperature Range

T

stg

-55ᴕ150

ᴱ

1998. 10. 8

2/3

BC556/7/8

Revision No : 3

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

NOTE : According to the value of h

FE

the BC546, BC547, BC548 are classified as follows.

CLASSIFICATION

none

A

B

C

h

FE

BC556

110ᴕ450

110ᴕ220

200ᴕ450

-

BC557

110ᴕ800

110ᴕ220

200ᴕ450

420ᴕ800

BC558

110ᴕ800

110ᴕ220

200ᴕ450

420ᴕ800

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

I

CBO

V

CB

=-30V, I

E

=0

-

-

-15

nA

DC Current Gain (Note)

BC556

h

FE

V

CE

=-5V, I

C

=-2mA

110

-

450

BC557

110

-

800

BC558

110

-

800

Collector-Emitter
Saturation Voltage

BC556

V

CE(sat)

I

C

=-100mA, I

B

=-5mA

-

-

-0.65

V

BC557

-

-

-0.65

BC558

-

-

-0.65

Base-Emitter
Saturation Voltage

BC556

V

BE(sat)

I

C

=-100mA, I

C

=-5mA

-

-0.9

-1.1

V

BC557

-

-0.9

-1.1

BC558

-

-0.9

-1.1

Base-Emitter Voltage

V

BE(ON)

1

V

CE

=-5V, I

C

=-2mA

-0.6

-

-0.75

V

V

BE(ON)

2

V

CE

=-5V, I

C

=-10mA

-

-

-0.8

V

Transition Frequency

f

T

V

CE

=-5V, I

C

=-10mA, f=100MHz

-

150

-

MHz

Collector Output Capacitance

C

ob

V

CB

=-10V, f=1MHz, I

E

=0

-

4.5

-

pF

Noise Figure

BC556

NF

V

CE

=-6V, I

C

=-0.1mA

R

g

=10kή, f=1kHz

-

1.0

10

dB

BC557

-

1.0

10

BC558

-

1.0

10

1998. 10. 8

3/3

BC556/7/8

Revision No : 3

COLLECTOR CURRENT I (mA)

0

C

0

COLLECTOR-EMITTER VOLTAGE V (V)

CE

CE

C

I - V

COLLECTOR POWER DISSIPATION

0

C

0

AMBIENT TEMPERATURE Ta ( C)

C

P - Ta

10

DC CURRENT GAIN h

FE

-3

-1

-0.3

-0.1

COLLECTOR CURRENT I (mA)

C

h - I

f - I

C

COLLECTOR CURRENT I (mA)

-0.1

-0.3

-1

-3

T

TRANSITION FREQUENCY f (MHz)

10

BASE CURRENT I (

µ

A)

B

-0.3

0

BASE-EMITTER VOLTAGE V (V)

BE

I - V

-1

-2

-3

-4

-5

-6

-7

-40

-80

-120

-160

-200

-240

COMMON EMITTER
Ta=25 C

-2.0

-1.5

-1.0

-0.5

I =-0.2mA

B

0

FE

C

-10

-30

-100

-300

30

50

100

300

500

1k

COMMON EMITTER

Ta=100 C
Ta=25 C

Ta=-25 C

V =-5V

V =-1V

CE

CE

VOLTAGE V (V)

CE(sat)

-10

-3

-1

-0.3

-0.1

COLLECTOR CURRENT I (mA)

C

V - I

CE(sat)

C

COLLECTOR-EMITTER SATURATION

-10

-30

-100

-300

COMMON EMITTER

I /I =10

C B

Ta=100 C

Ta=25 C

Ta=-25 C

T

C

-10

-30

-100

-300

30

50

100

300

500

1k

3k

COMMON EMITTER

V =-5V
Ta=25 C

CE

B

BE

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

-1

-3

-10

-30

-100

-300

-1k

COMMON
EMITTER
V =-6V

CE

Ta=100

C

Ta=25

C

Ta=-25

C

P (mW)

25

50

75

100

125

150

175

100

200

300

400

500

625

700

-30

-50

-100

-300

-500

-1k

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