1999. 8. 7

1/2

SEMICONDUCTOR

TECHNICAL DATA

KTB598

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 1

LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS

FEATURES

ᴌLow Saturation Voltage

: V

CE(sat)

=-0.3V(Max.) at I

C

=-0.5A.

ᴌComplementary to KTD545.

MAXIMUM RATING (Ta=25ᴱ)

TO-92

DIM

MILLIMETERS

A
B
C
D

F

G
H

J

K

L

4.70 MAX
4.80 MAX
3.70 MAX

0.45
1.00
1.27
0.85
0.45

14.00 0.50

0.55 MAX

2.30

D

1 2

3

B

A

J

K

G

H

F

F

L

E

C

E

C

M

N

0.45 MAX

M

1.00

N

1. EMITTER
2. COLLECTOR
3. BASE

+_

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

I

CBO

V

CB

=-20V, I

E

=0

-

-

-0.1

ỌA

Emitter Cut-off Current

I

EBO

V

EB

=-5V, I

C

=0

-

-

-0.1

ỌA

DC Current Gain

h

FE

(1) (Note)

V

CE

=-2V, I

C

=-50mA

70

-

400

h

FE

(2)

V

CE

=-2V, I

C

=-1A(Pulse)

30

-

-

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

=-500mA, I

B

=-50mA

-

-0.15

-0.3

V

Base-Emitter Saturation Voltage

V

BE(sat)

I

C

=-500mA, I

B

=-50mA

-

-0.85

-1.2

V

Transition Frequency

f

T

V

CE

=-10V, I

C

=-50mA

-

180

-

MHz

Collector Output Capacitance

C

ob

V

CB

=-10V, I

E

=0, f=1MHz

-

25

-

pF

Note : h

FE

Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

V

CBO

-30

V

Collector-Emitter Voltage

V

CEO

-25

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current

I

C

-1

A

Collector Power Dissipation

P

C

625

mW

Junction Temperature

T

j

150

ᴱ

Storage Temperature Range

T

stg

-55ᴕ150

ᴱ

1999. 8. 7

2/2

KTB598

Revision No : 1

-0.01

COLLECTOR-EMITTER SATURATION

CE

-300

-100

-30

-10

COLLECTOR CURRENT I (mA)

C

V - I

h - I

C

COLLECTOR CURRENT I (mA)

C

COLLECTOR CURRENT I (mA)

COLLECTOR-EMITTER VOLTAGE V (V)

0

CE

0

I - V

C

CE

-1

-2

-3

-4

-5

-6

-7

-200

-400

-600

-800

CE(sat)

C

-1K

-3K

-10K

-0.03

0.05

-0.1

-0.3

-0.5

-1.0

I /I =10

C

FE

C

-8

I =0mA

B

B

I =-1mA

B

I =-2mA

B

I =-4mA

B

I =-6mA

B

I =-10mA

I =-8mA

B

COLLECTOR-EMITTER VOLTAGE V (V)

COLLECTOR CURRENT I (mA)

0

0

-200

-400

-0.2

-600

-800

C

-0.8

-0.4

-0.6

-1.0

CE

I - V

C

CE

-1000

B

I =-1mA

I =-3mA

B

I =-5mA

B

I =-10mA

B

I

=-

20mA

B

I =-30mA

B

I

=-

50m

A

B

I =-10

0mA

B

BASE-EMITTER VOLTAGE V (V)

COLLECTOR CURRENT I (A)

0

0

-0.2

-0.4

-0.2

-0.4

-0.6

-0.8

C

-1.4

-0.6

-0.8

-1.0 -1.2

-1.6

BE

I - V

C

BE

-1.0

-1.2

-1.4

V =-2V

CE

-2.0

VOLTAGE V (V)

B

TRANSITION FREQUENCY f (MHz)

COLLECTOR CURRENT I (mA)

-300

-10

30

10

-1

-3

-30

C

-100

-1K

V =-10V

CE

500

50

100

300

T

1K

2K

f - I

T

C

-1

-3

-10

-30

-1

FE

DC CURRENT GAIN h

-100 -300 -1K

-3K -10K

-3

-5

-10

-30

-50

-100

-300

-500

V =-2V

CE