C557B T Rectron elenota pl

background image

mA

Base Current - Peak

I

BM

Storge Temperature

Tstg

mW

T

amb

= 25

o

C

Total power dissipation up to

P

tot

DESCRIPTION

SYMBOL

UNITS

Collector Emmitter Voltage

V
V

80

50

30

V

CEO

V
V

I

EM

I

C

mA

I

CM

mA

5

5

5

500

-55 to +150

o

C

150

o

C

o

C/W

250

BC556

200

100
200

80

50

BC557

BC558

30

65

30

200

V

CES

Collector Base Voltage

V

CBO

Collector Current Continuous
Peak

Thermal Resistance

Junction Temperature

Tj

From junction to ambient

R

th(j-a)

45

Emitter Base Voltage

V

EBO

Emitter Current - Peak

Collector Emitter Voltage

PNP Silicon Planar Epitaxial Transistors

BC556,A,B,C
BC557,A,B,C
BC558,A,B,C

Absolute Maximum Ratings (Ta = 25

o

C unless specified otherwise)

TO-92 SMD Package

2

3

1

www.rectron.com

1 of 3

background image

BC556,A,B,C
BC557,A,B,C
BC558,A,B,C

MIN

TYP

MAX

65
45
30

80
50
30

5

15

4

0.20

15

0.20

15

0.20

15

4
4
4

0.55

0.66

0.70
0.82

0.09

0.30

0.25

0.65

0.70
0.90

90

150
270

75

475

75

800

110

180

220

200

290

450

420

500

800

120
200
400

I

E

= 100uA, I

C

= 0

nA

BC556

V

CE

= 80V

nA

I

CES

V

CE

= 80V, Tj = 125

o

C

uA

BC558

I

C

= 100uA, I

E

= 0

V

BC556
BC557
BC558

I

C

= 2mA, I

B

= 0

Collector Emitter Voltage

BC556

V

BC557

I

CBO

BC558

V

CEO

Collector Cut off Current

V

EBO

Collector Base Voltage

V

CBO

I

C

= 100mA, I

B

= 5mA

Base Emitter Saturation Voltage

V

BE(Sat)

I

C

= 10mA, I

B

= 0.5mA

B

h

FE

C

A

BC556

V

V

I

C

= 100mA, I

B

= 5mA

VCE = 5V, I

C

= 100mA

BC556

Base Emitter On Voltage

TEST CONDITION

V

BE(on)

I

C

= 2mA, V

CE

= 5V

I

C

= 10mA, V

CE

= 5V

Collector Cut off Current

VCE = 5V, I

C

= 2mA

Emitter Base Voltage

uA

BC557

V

CE

= 50V, Tj = 125

o

C

uA

UNITS

Collector Emitter Saturation Voltage

I

C

= 10mA, I

B

= 0.5mA

V

CB

= 30V, I

E

= 0

DESCRIPTION

SYMBOL

V

CB

= 30V, I

E

= 0, Tj = 150

o

C

DC Current Gain

C

B

A

BC557

V

CE

= 50V

nA

VCE = 5V, I

C

= 10uA

BC558

V

CE

= 30V

V

CE

= 30V, Tj = 125

o

C

V

V

CE(Sat)

V

nA
uA

A
B
C

BC557/BC558

Electrical Characteristics (Ta=25

o

C unless otherwise specified)

www.rectron.com

2 of 3

background image

BC556,A,B,C
BC557,A,B,C
BC558,A,B,C

MIN

TYP

MAX

150

6

2

10

220
330
600

1.6

2.7

4.5

3.2

4.5

8.5

6.0

8.7

15

1.5
2.0
3.0

18

30

30

60

60

110

u MHO

DYNAMICS CHARACTERISTICS
Transition Frequency

f

T

I

C

= 10mA, V

CE

= 5V, f = 100MH

Z

MH

Z

x10

Input Impedance

V

CE

= 5V, I

C

= 2mA, f= 1kH

Z

A

h

ie

Noise Figure

NF

VCE = 5V, I

C

= 0.2mA

dB

R

S

= 2k ohm, f = 1KH

Z

, B= 200H

Z

B
C

h

fe

Small Signal Current Gain

V

CE

= 5V, I

C

= 2mA, f= 1kH

Z

A

Collector output Capacitance

C

cbo

V

CB

= 10V, f = 1MH

Z

pF

C

B
C

C

h

re

V

CE

= 5V, I

C

= 2mA, f= 1kH

Z

A

Output Admittance

h

oe

V

CE

= 5V, I

C

= 2mA, f= 1kH

Z

Voltage Feedback

B

A

k ohm

B

DESCRIPTION

SYMBOL TEST CONDITION

UNITS

Electrical Characteristics (Ta=25

o

C unless otherwise specified)

www.rectron.com

3 of 3


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