3. Block Diagram
3-1 RF Block Diagram
Samsung Electronics
3-1
LNA
bias
circuit
RX
SAW
LPF
RX
SAW
filter
IF
SAW
filter
/6
PLL1
Dual
synth.
PLL2
RF VCO
1160 ~ 1185 MHz
890 ~ 915 MHz
Ant S/W
P.A.
935 ~ 960 MHz
225 MHz
45 MHz
LMX2336L
VCTCXO
13MHz
TCO-999
LC
filter
I & Q
Demo.
45 MHz
270 MHz
HD 155101BF
540 MHz
270 MHz
270 MHz
270 MHz
Phase
Detector
90 deg
Shift /2
90 deg
Shift /2
/2
Loop
filter
TX VCO
B.B.
Block
I
O
I
O
AGC
TX
SAW
I & Q
Mod
3-2
Samsung Electronics
3-2 Baseband Block Diagram
VCC
RTC VCC
LDO
Regulator
Ni_MH Battery (3.6V)
System
Clock
System
RAM 4M
System
memory
Flash
ROM 16M
EEPROM 128K
8M ROM (Voice
Recognition)
KeyPad
Graphic LCD
SIM Card
B.B Interface
DC/DC
Converter
RF Interface
Serial Data
Interface
+3V SIM Card
+5V SIM Card
Battery Voltage
Battery
Temperature
3V Tx
3V SYNTH
3V BRIGHT
AVCC
I/O Interface
A/D Interface
I/O BB Filter
AGC, AFC
PLL
LDO
Regulators
BB
3.0V
3.6V
3.6V
3.0V
RF
GSM/DCS
VOCODER
Memory
Charging Circuit
Li_lon Battery (3.6V)
GSM/DCS
KERNEL 5
3.3V
Samsung Electronics
3-3
3-3 DTC Block Diagram
CHOKE COIL
Switching TR
Circuit
UVLO
Overcurrent Protector
2nd Regulator
Reference
Voltage
Overheat
Protector
Feed Back
LED
MPU
Filter
FET Switch
INPUT
9V DC
FRT 4.1V
FET Switch
REAR 4.1V
Static Current Circuit
Static Voltage Circuit
Battery Type Detector
Charge Voltage Detector
Charge Voltage Selector
3-4
Samsung Electronics
Power
(12V-28V)
Ignition
Stabilizer
Power
Control
5V
Regulator
DC/DC
Regulator
Current
Detector
Voltage/Current
Feed Back
MICOM
DSP
CODEC
Volume
Calibration
EEPROM
Control
Audio
Amp
Speaker
Microphone
RX
Amp
TX
Amp
Data
Communication
Cradle
3-4 HFK Bloc
k Dia
gram