BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-226AA (TO-92)
Features
" PNP Silicon Epitaxial Planar Transistors for switching
0.142 (3.6)
0.181 (4.6)
and amplifier applications. Especially suitable for
AF-driver stages and low-power output stages.
" These types are also available subdivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementary types, the NPN
transistors BC327 and BC338 are recommended.
" On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package
max. "
Weight: approx. 0.18g
0.022 (0.55)
Packaging Codes/Options:
E6/Bulk  5K per container, 20K/box
0.098 (2.5)
Dimensions in inches
and (millimeters)
E7/4K per Ammo mag., 20K/box
Bottom
View
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
BC327 50
Collector-Emitter Voltage  V V
CES
BC328 30
BC327 45
Collector-Emitter Voltage  V V
CEO
BC328 25
Emitter-Base Voltage  V 5V
EBO
Collector Current  I 800 mA
C
Peak Collector Current  I 1A
CM
Base Current  I 100 mA
B
Power Dissipation at Tamb = 25°CP 625(1) mW
tot
Thermal Resistance Junction to Ambient Air R 200(1) °C/W
ÅšJA
Junction Temperature T 150 °C
j
Storage Temperature Range T  65 to +150 °C
S
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Document Number 88158 www.vishay.com
08-May-02 1
0.181 (4.6)
min. 0.492 (12.5)
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T = 25°C unless otherwise noted)
J
Parameter Symbol Test Condition Min Typ Max Unit
Current Gain Group -16 100 160 250
-25 -V 1 V, -I = 100 mA 160 250 400
CE = C
-40 250 400 630
DC Current Gain h 
FE
Current Gain Group -16 60 130 
-25 -V 1 V, -I = 300 mA 100 200 
CE = C
-40 170 320 
BC327 -V = 45 V  2 100 nA
CE
BC328 -V = 25 V  2 100 nA
CE
Collector-Emitter Cutoff Current -I
CES
BC327 -V = 45 V, T = 125°C   10 µA
CE amb
BC328 -V = 25 V, T = 125°C   10 µA
CE amb
Collector Saturation Voltage -V -I = 500 mA, -I = 50 mA   0.7 V
CEsat C B
Base-Emitter Voltage -V -V = 1 V, -I = 300 mA   1.2 V
BE CE C
BC327 45  
Collector-Emitter Breakdown Voltage -V( V
BR)CEO -I = 10 mA
C
BC328 25  
BC327 50  
Collector-Emitter Breakdown Voltage -V( V
BR)CES -I = 0.1 mA
C
BC328 30  
Emitter-Base Breakdown Voltage -V( 5   V
BR)EBO -I = 0.1 mA
E
-V = 5 V, -I = 10 mA
CE C
Gain-Bandwidth Product f  100  MHz
T
f = 50 MHz
Collector-Base Capacitance C -V = 10 V, f = 1 MHz  12  pF
CBO CB
www.vishay.com Document Number 88158
2 08-May-02
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (T = 25°C unless otherwise noted)
A
Document Number 88158 www.vishay.com
08-May-02 3
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (T = 25°C unless otherwise noted)
A
www.vishay.com Document Number 88158
4 08-May-02
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (T = 25°C unless otherwise noted)
A
Document Number 88158 www.vishay.com
08-May-02 5
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Datasheets for electronics components.