MOSFET with Diode PLECS 1.5 Online Help MOSFET with Diode Purpose Ideal MOSFET with ideal anti-parallel diode. Library Switches Description This model of a Metal Oxide Semiconductor Field Effect Transistor has an integrated anti-parallel diode. The diode is usually included in power MOSFET packages. Dialog Box Width The width of the component. This affects both the width of the electrical ports and the width of the gate input signal. The default is 1. Initial conductivity Initial conduction state of the device. The device is initially blocking if the parameter evaluates to zero, otherwise it is conducting. This parameter may either be a scalar or a vector with the width of the component. The default value is 0. The following parameters define the thermal behavior of the component. For more information see chapter Thermal Modeling. On-state voltage drop (therm.) A 2-D function defining the voltage drop in volts (V) that is used for calculating the thermal conduction losses. The default is [] meaning no thermal conduction losses. Turn-on loss (therm.), Turn-off loss (therm.) 3-D functions and defining the total thermal losses dissipated during a switching transition, in joule (J). The default is [] meaning no thermal turn-on resp. turn-off losses. Probe Signals Device voltage The voltage measured between drain and source. The device voltage can never be negative. Device current The current through the device. The current is positive if it flows through the MOSFET from drain to source and negative if it flows through the diode from source to drain. Device conductivity Conduction state of the internal switch. The signal outputs 0 when the device is blocking, and 1 when it is conducting. Device conduction loss Continuous thermal conduction losses in watt (W). Only defined if the component is placed on a heat sink. Device switching loss Instantaneous thermal switching losses in joule (J). Only defined if the component is placed on a heat sink.